A 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor(UMOSFET)with semi-super-junction shiel-ded structure(SS-UMOS)is proposed and compared with conventional trench MOSFET(CT-UMOS)in this work.The adv...A 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor(UMOSFET)with semi-super-junction shiel-ded structure(SS-UMOS)is proposed and compared with conventional trench MOSFET(CT-UMOS)in this work.The advantage of the proposed structure is given by comprehensive study of the mechanism of the local semi-super-junction structure at the bottom of the trench MOSFET.In particular,the influence of the bias condition of the p-pillar at the bottom of the trench on the static and dynamic performances of the device is compared and revealed.The on-resistance of SS-UMOS with grounded(G)and ungrounded(NG)p-pillar is reduced by 52%(G)and 71%(NG)compared to CT-UMOS,respectively.Additionally,gate ox-ide in the GSS-UMOS is fully protected by the p-shield layer as well as semi-super-junction structure under the trench and p-base regions.Thus,a reduced electric-field of 2 MV/cm can be achieved at the corner of the p-shield layer.However,the quasi-intrinsic protective layer cannot be formed in NGSS-UMOS due to the charge storage effect in the floating p-pillar,resulting in a large electric field of 2.7 MV/cm at the gate oxide layer.Moreover,the total switching loss of GSS-UMOS is 1.95 mJ/cm2 and is reduced by 18%compared with CT-UMOS.On the contrary,the NGSS-UMOS has the slowest overall switching speed due to the weakened shielding effect of the p-pillar and the largest gate-to-drain capacitance among the three.The proposed GSS-UMOS plays an important role in high-voltage and high-frequency applications,and will provide a valuable idea for device design and circuit applications.展开更多
Silicon carbide(SiC)material features a wide bandgap and high critical breakdown field intensity.It also plays an important role in the high efficiency and miniaturization of power electronic equipment.It is an ideal ...Silicon carbide(SiC)material features a wide bandgap and high critical breakdown field intensity.It also plays an important role in the high efficiency and miniaturization of power electronic equipment.It is an ideal choice for new power electronic devices,especially in smart grids and high-speed trains.In the medium and high voltage fields,SiC devices with a blocking voltage of more than 6.5 kV will have a wide range of applications.In this paper,we study the influence of epitaxial material properties on the static characteristics of 6.5 kV SiC MOSFET.6.5 kV SiC MOSFETs with different channel lengths and JFET region widths are manufactured on three wafers and analyzed.The FN tunneling of gate oxide,HTGB and HTRB tests are performed and provide data support for the industrialization process for medium/high voltage SiC MOSFETs.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.62104222)the Natural Science Foundation of Fujian Province of China for Distinguished Young Scholars(Grant No.2020J06002)+3 种基金the Science and Technology Project of Fujian Province of China(Grant No.2020I0001)the Science and Technology Key Projects of Xiamen(Grant No.3502ZCQ20191001)Shenzhen Science and Technology Program(Grant No.JSGG20201102-155800003)Jiangxi Provincial Natural Science Foundation(Grant No.20212ACB212005).
文摘A 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor(UMOSFET)with semi-super-junction shiel-ded structure(SS-UMOS)is proposed and compared with conventional trench MOSFET(CT-UMOS)in this work.The advantage of the proposed structure is given by comprehensive study of the mechanism of the local semi-super-junction structure at the bottom of the trench MOSFET.In particular,the influence of the bias condition of the p-pillar at the bottom of the trench on the static and dynamic performances of the device is compared and revealed.The on-resistance of SS-UMOS with grounded(G)and ungrounded(NG)p-pillar is reduced by 52%(G)and 71%(NG)compared to CT-UMOS,respectively.Additionally,gate ox-ide in the GSS-UMOS is fully protected by the p-shield layer as well as semi-super-junction structure under the trench and p-base regions.Thus,a reduced electric-field of 2 MV/cm can be achieved at the corner of the p-shield layer.However,the quasi-intrinsic protective layer cannot be formed in NGSS-UMOS due to the charge storage effect in the floating p-pillar,resulting in a large electric field of 2.7 MV/cm at the gate oxide layer.Moreover,the total switching loss of GSS-UMOS is 1.95 mJ/cm2 and is reduced by 18%compared with CT-UMOS.On the contrary,the NGSS-UMOS has the slowest overall switching speed due to the weakened shielding effect of the p-pillar and the largest gate-to-drain capacitance among the three.The proposed GSS-UMOS plays an important role in high-voltage and high-frequency applications,and will provide a valuable idea for device design and circuit applications.
基金the support of the National Key Research and Development Program(Grant No.2016YFB0400500)the Science&Technology Program of the State Grid Corporation of China Co.,Ltd.“High voltage and high power SiC materials,devices and the application demonstration in power electronic transformers”.
文摘Silicon carbide(SiC)material features a wide bandgap and high critical breakdown field intensity.It also plays an important role in the high efficiency and miniaturization of power electronic equipment.It is an ideal choice for new power electronic devices,especially in smart grids and high-speed trains.In the medium and high voltage fields,SiC devices with a blocking voltage of more than 6.5 kV will have a wide range of applications.In this paper,we study the influence of epitaxial material properties on the static characteristics of 6.5 kV SiC MOSFET.6.5 kV SiC MOSFETs with different channel lengths and JFET region widths are manufactured on three wafers and analyzed.The FN tunneling of gate oxide,HTGB and HTRB tests are performed and provide data support for the industrialization process for medium/high voltage SiC MOSFETs.