SiC/SiO2 nanochains were synthesized on a carbon fiber substrate by a catalyst-free thermal evaporation method in the Ar/CO atmosphere.X-ray diffraction(XRD),Fourier-transform infrared spectroscopy(FT-IR),scanning ele...SiC/SiO2 nanochains were synthesized on a carbon fiber substrate by a catalyst-free thermal evaporation method in the Ar/CO atmosphere.X-ray diffraction(XRD),Fourier-transform infrared spectroscopy(FT-IR),scanning electron microscopy(SEM)and transmission electron microscopy(TEM)revealed that the as-synthesized SiC/SiO2 nanochains are composed of single-crystalline SiC nanowires and amorphous SiO2 beads.The introduction of CO can promote the formation of SiO2,so that the SiC/SiO2 nanochains are subsequently formed during cooling.In addition,the photoluminescence spectrum of SiC/SiO2 nanochains showed a broad emission peak at around 350 nm,which is ascribed to the oxygen discrepancy in the SiO2 beads as well as the SiC/SiO2 interfacial effect.These findings can provide guidance for further study of the vapor growth of 1D SiC-based materials.展开更多
基金Project(U19A2088)supported by the National Natural Science Foundation of ChinaProject(2019RS2058)supported by the Special Fund for Innovative Construction of Hunan Province,China。
文摘SiC/SiO2 nanochains were synthesized on a carbon fiber substrate by a catalyst-free thermal evaporation method in the Ar/CO atmosphere.X-ray diffraction(XRD),Fourier-transform infrared spectroscopy(FT-IR),scanning electron microscopy(SEM)and transmission electron microscopy(TEM)revealed that the as-synthesized SiC/SiO2 nanochains are composed of single-crystalline SiC nanowires and amorphous SiO2 beads.The introduction of CO can promote the formation of SiO2,so that the SiC/SiO2 nanochains are subsequently formed during cooling.In addition,the photoluminescence spectrum of SiC/SiO2 nanochains showed a broad emission peak at around 350 nm,which is ascribed to the oxygen discrepancy in the SiO2 beads as well as the SiC/SiO2 interfacial effect.These findings can provide guidance for further study of the vapor growth of 1D SiC-based materials.
