In this paper,we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells(MQWs)and the first polariton lasing in InGaN/GaN MQWs at room temperature by util...In this paper,we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells(MQWs)and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λFabry-Perot(F-P)cavity with double dielectric distributed Bragg reflectors(DBRs).Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts.The threshold of polariton lasing is about half of the threshold of photonic lasing.Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate(BEC)in nitride semiconductors.展开更多
基金National Key Research and Development Program of China(No.2016YFB0400803)the Science Challenge Project(No.TZ2016003)the National Natural Science Foundation of China(Nos.61704140,U1505253).
文摘In this paper,we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells(MQWs)and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λFabry-Perot(F-P)cavity with double dielectric distributed Bragg reflectors(DBRs).Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts.The threshold of polariton lasing is about half of the threshold of photonic lasing.Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate(BEC)in nitride semiconductors.
