Tungsten telluride thin films were successfully prepared on monocrystal sapphire substrates by using atomic layer de-position and chemical vapor deposition technology,and the effects of different tellurization tempera...Tungsten telluride thin films were successfully prepared on monocrystal sapphire substrates by using atomic layer de-position and chemical vapor deposition technology,and the effects of different tellurization temperatures on the properties of tungsten telluride films were investigated.The growth rate,crystal structure and composition of the film samples were character-ized and analyzed by using scanning electron microscope,Raman spectroscopy and X-ray photoelectron spectroscopy.The res-ults showed that tungsten telluride thin films with good crystal orientation in(001)were obtained at telluride temperature of 550℃.When the telluride temperature reached 570℃,the tungsten telluride began to decompose and unsaturated mag-netoresistance was found.展开更多
基金supported by the National Key Research and Development Program of China(No.2018YFA0704804)Chinese Academy of Sciences Research Instruments and Equipment Development Project(No.ZDKYYQ20220001)。
文摘Tungsten telluride thin films were successfully prepared on monocrystal sapphire substrates by using atomic layer de-position and chemical vapor deposition technology,and the effects of different tellurization temperatures on the properties of tungsten telluride films were investigated.The growth rate,crystal structure and composition of the film samples were character-ized and analyzed by using scanning electron microscope,Raman spectroscopy and X-ray photoelectron spectroscopy.The res-ults showed that tungsten telluride thin films with good crystal orientation in(001)were obtained at telluride temperature of 550℃.When the telluride temperature reached 570℃,the tungsten telluride began to decompose and unsaturated mag-netoresistance was found.
