Boost VS_(2) electrochemical reactive kinetics by regulating crystallographic planes and coupling carbon matrix for high performance sodium-ion storage

Vanadium disulfide(VS_(2)) as a typical two-dimensional transition metal chalcogenide has excellent competitiveness for sodium-ion storage due to its wide layer spacing(0.575 nm),high theoretical capacity of 932mAh·g^(-1) originating from multi-electron electrochemical redox.However,continuous sodiation process accompanied by crystal structural evolution and collapse cause rapid capacity decaying.Herein,novel few-layer VS_(2)nanosheets with open(001) crystal planes are in-situ constructed on reduced graphene oxide to solve these issues mentioned above.It indicates that few-layer VS_(2)provides more Na^(+) storage activity due to the low Na^(+)surface migration energy barrier on exposed crystal(001)planes.The flexible and high electronic conductivity of carbon matrix also effectively builds multi-level buffer structure and electron transport kinetics to boost the Na^(+)insertion/conversion reactive activity on VS_(2) as well as Na^(+) pseudocapacitance storage kinetics on edges and defects of nano sheets.Those coupling effects result in high rate capability and long cycling stability as a battery/capacitor anode.It delivers conspicuous high energy density of 81 and 40 Wh·kg^(-1) at power density of 118 and 10,286W·kg^(-1),as well as 80% energy retention rate after 5000cycles,confirming its great application potential in sodiumbased storage devices.

Microstructure and graphitization behavior of diamond/SiC composites fabricated by vacuum vapor reactive infiltration

To inhibit the graphitization of diamond under high temperature and low pressure, diamond/SiC composites were firstly fabricated by a rapid gaseous Si vacuum reactive infiltration process. The microstructure and graphitization behavior of diamond in the composites under various infiltration temperatures and holding time were investigated. The thermal conductivity of the resul- tant materials was discussed. The results show that the diamond-to-graphite transition is effectively inhibited at temperature of as high as 1600 ℃ under vacuum, and the substantial graphitization starts at 1700 ℃. The microstructure of those ungraphitized samples is uniform and fully densified. The inhibition mechanisms of graphitization include the isolation of the catalysts from diamond by a series of protective layers, high pressure stress applied on diamond by the reaction-bonded SiC, and the moderate gas-solid reaction. For the graphitized samples, the boundary between diamond and SiC is coarse and loose. The graphitization mechanism is considered to be an initial detachment of the bilayers from the diamond surfaces, and subsequently flattening to form graphite. The ungraphitized samples present higher thermal conductivity of about 410 W.m-1.K-1 due to the fine interfacial structure. For the graphitized samples, the thermal conductivity decreases significantly to 285 W.m-1.K-1 as a result of high interfacial thermal resistance.