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Influence of Experimental Parameters on Reactive Magnetron Sputtering CN_x Thin Films
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作者 zheng, wt Ding, T +1 位作者 Ivanov, I Sundgren, JE 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 1997年第2期154-156,共3页
Carbon nitride thin films were deposited on Si(001) using unbalanced magnetron sputtering at different experimental parameters. The effects of nitrogen partial pressure, substrate temperature and substrate bias on the... Carbon nitride thin films were deposited on Si(001) using unbalanced magnetron sputtering at different experimental parameters. The effects of nitrogen partial pressure, substrate temperature and substrate bias on the deposition rate and nitrogen content are discussed. 展开更多
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N1s Electron Binding Energies of CN_x Thin Films Grown by Magnetron Sputtering at Different Temperature 被引量:1
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作者 zheng, wt Xing, KZ +3 位作者 Hellgren, N Ivanov, I Salaneck, WS Sundgren, JE 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 1998年第1期25-28,共4页
Carbon nitride thin films deposited using dc unbalanced magnetron sputtering system have been analyzed by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. ... Carbon nitride thin films deposited using dc unbalanced magnetron sputtering system have been analyzed by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The XPS data show that N1s binding states depend on substrate temperature T-s, in which the peak at 400.0 eV increases with T-s, whereas the peak at 398.3 eV decreases with T-s slightly. On the basis of XPS, FTIR and Raman spectra, the assignment of N1s electron binding energies was made. The peak at 400.0 eV is attributed to N atoms bonded to sp(2) coordinated C atoms. The peak at 398.3 eV is attributed to N atoms bonded to sp(3) coordinated C atoms as well as N-C bonds. 展开更多
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