A bias-controlled spin-filter and spin memory is theoretically proposed, which consists of the junction with a singlemolecule magnet sandwiched between the nonmagnetic and ferromagnetic(FM) leads. By applying differen...A bias-controlled spin-filter and spin memory is theoretically proposed, which consists of the junction with a singlemolecule magnet sandwiched between the nonmagnetic and ferromagnetic(FM) leads. By applying different voltage pulses Vwriteacross the junction, the spin direction of the single-molecule magnet can be controlled to be parallel or anti-parallel to the magnetization of the FM lead, and the spin direction of SMM can be "read out" either by the magneto-resistance or by the spin current with another series of small voltage pulses V_(probe). It is shown that the polarization of the spin current is extremely high(up to 100%) and can be manipulated by the full-electric manner. This device scheme can be compatible with current technologies and has potential applications in high-density memory devices.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 11404322)the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No. 18KJD140005)+1 种基金supported by the China Postdoctoral Science Foundation (Grant No. 2013M541635)the Postdoctoral Science Foundation of Jiangsu Province,China (Grant No. 1301018B)。
文摘A bias-controlled spin-filter and spin memory is theoretically proposed, which consists of the junction with a singlemolecule magnet sandwiched between the nonmagnetic and ferromagnetic(FM) leads. By applying different voltage pulses Vwriteacross the junction, the spin direction of the single-molecule magnet can be controlled to be parallel or anti-parallel to the magnetization of the FM lead, and the spin direction of SMM can be "read out" either by the magneto-resistance or by the spin current with another series of small voltage pulses V_(probe). It is shown that the polarization of the spin current is extremely high(up to 100%) and can be manipulated by the full-electric manner. This device scheme can be compatible with current technologies and has potential applications in high-density memory devices.
