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A Cu/ZnO Nanowire/Cu Resistive Switching Device 被引量:1
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作者 Lijie Li Yan Zhang zhengjun chew 《Nano-Micro Letters》 SCIE EI CAS 2013年第3期159-162,共4页
A new device has been realized using flip-chip joining two printed circuit boards(PCBs) on which zinc oxide(ZnO) nanowires were synthesized. Energy dispersive X-ray measurement has been conducted for the ZnO nanowires... A new device has been realized using flip-chip joining two printed circuit boards(PCBs) on which zinc oxide(ZnO) nanowires were synthesized. Energy dispersive X-ray measurement has been conducted for the ZnO nanowires, confirming that Cu elements have been diffused into the nanowires during the chemical growth process. From I-V measurements, this Cu/ZnO nanowire/Cu structure exhibits a resistive tuning behaviour, which varies greatly with the frequency of the applied sinusoidal source. 展开更多
关键词 Cu/ZnO NANOWIRES FLIP-CHIP Resistive switching DEVICE
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