Electronic Instability of Kagome Metal CsV_(3)Sb_(5) in the 2×2×2 Charge Density Wave State

Recently discovered kagome metals AV_(3)Sb_(5)(A=K,Rb,and Cs)provide an ideal platform to study the correlation among nontrivial band topology,unconventional charge density wave(CDW),and superconductivity.The evolution of electronic structures associated with the change of lattice modulations is crucial for understanding of the CDW mechanism,with the combination of angle-resolved photoemission spectroscopy(ARPES)measurements and density functional theory calculations,we investigate how band dispersions change with the increase of lattice distortions.In particular,we focus on the electronic states around M point,where the van Hove singularities are expected to play crucial roles in the CDW transition.Previous ARPES studies reported a spectral weight splitting of the van Hove singularity around M point,which is associated with the 3D lattice modulations.Our studies reveal that this“splitting”can be connected to the two van Hove singularities at k_(z)=0 and k_(z)=π/c in the normal states.When the electronic system enters into the CDW state,both van Hove singularities move down.Such novel properties are important for understanding of the CDW transition.

Disentangling the electron-lattice dichotomy of the excitonic insulating phase in Ta_(2)Ni(Se_(1-x)S_(x))_(5) with sulfur substitution and potassium deposition

Ta_(2)NiSe_(5) is a promising candidate for hosting an excitonic insulator(EI)phase,a novel electronic state driven by electron-hole Coulomb attraction.However,the role of electron-lattice coupling in the formation of the EI phase remains controversial.Here,we use angle-resolved photoemission spectroscopy(ARPES)to study the band structure evolution of Ta_(2)Ni(Se_(1-x)S_(x))_(5) with sulfur substitution and potassium deposition,which modulate the band gap and the carrier concentration,respectively.We find that the Ta 5d states originating from the bottom of the conduction band persist at the top of the valence band in the low-temperature monoclinic phase,indicating the importance of exciton condensation in opening the gap in the semi-metallic band structure.We also observe that the characteristic overlap between the conduction and valence bands can be restored in the monoclinic lattice by mild carrier injection,suggesting that the lattice distortion in the monoclinic phase is not the main factor for producing the insulating gap,but rather the exciton condensation in the electronic system is the dominant driving force.Our results shed light on the electron-lattice decoupling and the origin of the EI phase in Ta_(2)Ni(Se_(1-x)Sx)_(5).