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Dielectric ultracapacitors based on columnar nano-grained ferroelectric oxide films with gradient phases along the growth direction
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作者 Chuanqi Song Feifan Zheng +8 位作者 Yuan Zhang Hongbo Cheng Long Teng Kun Wang Hanfei Zhu Chao Liu Li Wang zhengyan liang Jun Ouyang 《Journal of Advanced Ceramics》 SCIE EI CAS 2024年第7期1072-1079,共8页
In this work,dielectric ultracapacitors were designed and fabricated using a combination of phase boundary and nanograin strategies.These ultracapacitors are based on submicron-thick Ba(Zr_(0.2)Ti_(0.8))O_(3) ferroele... In this work,dielectric ultracapacitors were designed and fabricated using a combination of phase boundary and nanograin strategies.These ultracapacitors are based on submicron-thick Ba(Zr_(0.2)Ti_(0.8))O_(3) ferroelectric films sputterdeposited on Si at 500℃.With a composition near a polymorphic phase boundary(PPB),a compressive strain,and a high nucleation rate due to the lowered deposition temperature,these films exhibit a columnar nanograined microstructure with gradient phases along the growth direction.Such a microstructure presents three-dimensional polarization inhomogeneities on the nanoscale,thereby significantly delaying the saturation of the overall electric polarization.Consequently,a pseudolinear,ultraslim polarization(P)-electric field(E)hysteresis loop was obtained,featuring a high maximum applicable electric field(~5.7 MV/cm),low remnant polarization(~5.2μC/cm^(2))and high maximum polarization(~92.1μC/cm^(2)).This P-E loop corresponds to a high recyclable energy density(Wrec~208 J/cm^(3))and charge‒discharge efficiency(~88%).An indepth electron microscopy study revealed that the gradient ferroelectric phases consisted of tetragonal(T)and rhombohedral(R)polymorphs along the growth direction of the film.The T-rich phase is abundant near the bottom of the film and gradually transforms into the R-rich phase near the surface.These films also exhibited a high Curie temperature of~460℃and stable capacitive energy storage up to 200℃.These results suggest a feasible pathway for the design and fabrication of high-performance dielectric film capacitors. 展开更多
关键词 ferroelectric thin films energy storage phase coexistence nanograin silicon
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