Bending strength degradation of a cantilever plate with surface energy due to partial debonding at the clamped boundary

This paper investigates the bending fracture problem of a micro/nanoscale cantilever thin plate with surface energy,where the clamped boundary is partially debonded along the thickness direction.Some fundamental mechanical equations for the bending problem of micro/nanoscale plates are given by the Kirchhoff theory of thin plates,incorporating the Gurtin-Murdoch surface elasticity theory.For two typical cases of constant bending moment and uniform shear force in the debonded segment,the associated problems are reduced to two mixed boundary value problems.By solving the resulting mixed boundary value problems using the Fourier integral transform,a new type of singular integral equation with two Cauchy kernels is obtained for each case,and the exact solutions in terms of the fundamental functions are determined using the PoincareBertrand formula.Asymptotic elastic fields near the debonded tips including the bending moment,effective shear force,and bulk stress components exhibit the oscillatory singularity.The dependence relations among the singular fields,the material constants,and the plate's thickness are analyzed for partially debonded cantilever micro-plates.If surface energy is neglected,these results reduce the bending fracture of a macroscale partially debonded cantilever plate,which has not been previously reported.

Tuning photoresponse of graphene-black phosphorus heterostructure by electrostatic gating and photo-induced doping

Metal-semiconductor diodes constructed from two-dimensional(2D)van der Waals heterostructures show excellent gate electrostatics and a large built-in electric field at the tunnel junction,which can be exploited to make highly sensitive photodetector.Here we demonstrate a metal-semiconductor photodiode constructed by the monolayer graphene(Gr)on a few-layer black phosphorus(BP).Due to the presence of a built-in potential barrier(~0.09±0.03 eV)at the Gr-BP interface,the photoresponsivity of the Gr-BP device is enhanced by a factor of 672%,and the external quantum efficiency(EQE)increases to648%from 84%of the bare BP.Electrostatic gating allows the BP channel to be switched between p-type and n-type conduction.We further demonstrate that excitation laser power can be used to control the current polarity of the Gr-BP device due to photon-induced doping.The versatility of the Gr-BP junctions in terms of electrostatic bias-induced or light-induced switching of current polarity is potentially useful for making dynamically reconfigurable digital circuits.

Controllable n-type doping in WSe_(2)monolayer via construction of anion vacancies

The successful applications of two-dimensional(2 D)transition metal dichalcogenides highly rely on rational regulation of their electronic properties.The nondestructive and controllable doping strategy is of great importance to implement 2 D materials in electronic devices.Herein,we propose a straightforward and effective method to realize controllable n-type doping in WSe_(2)monolayer by electron beam irradiation.Electrical measurements and photoluminescence(PL)spectra verify the strong n-doping in electron beam-treated WSe_(2)monolayers.The n-type doping arises from the generation of Se vacancies and the doping degree is precisely controlled by irradiation fluences.Due to the n-dopinginduced narrowing of the Schottky barrier,the current of back-gated monolayer WSe_(2)is enhanced by an order of magnitude and a$8?increase in the electron filed-effect mobility is observed.Remarkably,it is a moderate method without significant reduction in electrical performance and severe damage to lattice structures even under ultra-high doses of irradiation.