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MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices
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作者 Geng Wang Lu Wang +6 位作者 Hong Chen Wenxin Wang zhenwu shi Yulong Chen Miao He Pingyuan Lu Weining Qian 《Chinese Science Bulletin》 SCIE EI CAS 2014年第20期2383-2386,共4页
Two kinds of short-period type II superlattices(SLs)InAs(6 monolayers(MLs))/GaSb(3 MLs)and InAs(8 MLs)/GaSb(8 MLs)which can serve for mid-infrared(MIR)detection have been grown by molecular beam epitaxy(MBE)on p-type ... Two kinds of short-period type II superlattices(SLs)InAs(6 monolayers(MLs))/GaSb(3 MLs)and InAs(8 MLs)/GaSb(8 MLs)which can serve for mid-infrared(MIR)detection have been grown by molecular beam epitaxy(MBE)on p-type GaSb(100)substrates.The cutoff wavelength for the two superlattices(SLs)was found to be around 4.8 lm at 300 K.The high resolution X-ray diffraction(HRXRD)measurements indicated that the InAs(8 MLs)/GaSb(8 MLs)SLs have better crystalline quality than that of the InAs(6 MLs)/GaSb(3 MLs)SLs.However,compared with infrared absorption in the 2.5–4.3 lm range,the optical absorption of InAs(6 MLs)/GaSb(3MLs)SLs was more excellent.This can be attributed to increase probability of the electron and hole wave function overlap in the thinner period thickness. 展开更多
关键词 分子束外延生长 锑化镓 超晶格 砷化铟 中红外 高吸收 MLS InAs
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