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Carrier and magnetism engineering for monolayer SnS_(2) by high throughput first-principles calculations
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作者 Qing Zhan Xiaoguang Luo +3 位作者 Hao zhang zhenxiao zhang Dongdong Liu Yingchun Cheng 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第11期22-26,共5页
Two-dimensional(2D)semiconducting tin disulfide(SnS_(2))has been widely used for optoelectronic applications.To functionalize SnS_(2) for extending its application,we investigate the stability,electronic and magnetic ... Two-dimensional(2D)semiconducting tin disulfide(SnS_(2))has been widely used for optoelectronic applications.To functionalize SnS_(2) for extending its application,we investigate the stability,electronic and magnetic properties of substitutional doping by high throughput first-principles calculations.There are a lot of elements that can be doped in monolayer SnS_(2).Nonmetal in group A can introduce p-type and n-type carriers,while most metals in group A can only lead to p-type doping.Not only 3d,but also 4d and 5d transition metals in groups VB to VⅢB9 can introduce magnetism in SnS_(2),which is potentially applicable for spintronics.This study provides a comprehensive view of functionalization of SnS_(2) by substitutional doping,which will guide further experimental realization. 展开更多
关键词 SnS_(2) high throughput first-principles calculations CARRIER MAGNETISM
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