Large Rabi splitting obtained in Ag‐WS2 strong‐coupling heterostructure with optical microcavity at room temperature

Manipulation of light-matter interaction is critical in modern physics, especially in the strong coupling regime, where the generated half-light, half-matter bosonic quasiparticles as polaritons are important for fundamental quantum science and applications of optoelectronics and nonlinear optics. Two-dimensional transition metal dichalcogenides (TMDs) are ideal platforms to investigate the strong coupling because of their huge exciton binding energy and large absorption coefficients. Further studies on strong exciton-plasmon coupling by combining TMDs with metallic nanostructures have generated broad interests in recent years. However, because of the huge plasmon radiative damping, the observation of strong coupling is significantly limited at room temperature. Here, we demonstrate that a large Rabi splitting (~300 meV) can be achieved at ambient conditions in the strong coupling regime by embedding Ag-WS2 heterostructure in an optical microcavity. The generated quasiparticle with part-plasmon, part-exciton and part-light is analyzed with Hopfield coefficients that are calculated by using three-coupled oscillator model. The resulted plasmon-exciton polaritonic hybrid states can efficiently enlarge the obtained Rabi splitting, which paves the way for the practical applications of polaritonic devices based on ultrathin materials.

Intercalation of van der Waals layered materials: A route towards engineering of electron correlation

Being parent materials of two-dimensional (2D) crystals, van der Waals layered materials have received revived interest. In most 2D materials, the interaction between electrons is negligible. Introducing the interaction can give rise to a variety of exotic properties. Here, via intercalating a van der Waals layered compound VS2, we find evidence for electron correlation by extensive magnetic, thermal, electrical, and thermoelectric characterizations. The low temperature Sommerfeld coefficient is 64 mJ·K-2·mol-1 and the Kadowaki-Woods ratio rKW^0.20a0. Both supports an enhancement of the electron correlation. The temperature dependences of the resistivity and thermopower indicate an important role played by the Kondo effect. The Kondo temperature TK is estimated to be around 8 K. Our results suggest intercalation as a potential means to engineer the electron correlation in van der Waals materials, as well as 2D materials.

Design and Realization of Meteorological Service and Meteorological Information Officer Management Business Platform Based on WebGIS Information Interaction

A meteorological service and meteorological information officer management business platform based on WebGIS information interaction is designed and realized.Firstly,the goals of system construction are introduced,and then the features of the system is analyzed.Finally,the subsystems of the system are studied,such as geographic information subsystem,information officer management subsystem,information release subsystem,information feedback and evaluation subsystem,radar analysis subsystem,time traceback subsystem,integrated display subsystem,etc.

Substitutional doping in 2D transition metal dichalcogenides

Two-dimensional(2D)van der Waals transition metal dichalcogenides(TMDs)are a new class of electronic materials offering tremendous opportunities for advanced technologies and fundamental studies.Similar to conventional semiconductors,substitutional doping is key to tailoring their electronic properties and enabling their device applications.Here,we review recent progress in doping methods and understanding of doping effects in group 6 TMDs(MX2,M=Mo,W;X=S,Se,Te),which are the most widely studied model 2D semiconductor system.Experimental and theoretical studies have shown that a number of different elements can substitute either M or X atoms in these materials and act as n-or p-type dopants.This review will survey the impact of substitutional doping on the electrical and optical properties of these materials,discuss open questions,and provide an outlook for further studies.

Application of chemical vapor-deposited monolayer ReSe2 in the electrocatalytic hydrogen evolution reaction

Controlled synthesis of structurally anisotropic rhenium diselenide （ReSe2） with macroscopically uniform and strictly monolayer thickness as well as tunable domain shape/size is of great interest for electronics-, optoelectronics-, and electrocatalysis-related applications. Herein, we describe the controlled synthesis of uniform monolayer ReSe2 flakes with variable morphology （sunflower- or truncated-triangle-shaped） on SiO2/Si substrates using different ambient-pressure chemical vapor deposition （CVD） setups. The prepared polycrystalline ReSe2 flakes were transferred intact onto Au foil electrodes and tested for activity in the hydrogen evolution reaction （HER）. Interestingly, compared to the compact truncated-triangle-shaped ReSe2 flakes, their edge-abundant sunflower-shaped counterparts exhibited superior electrocatalytic HER activity, featuring a relatively low Tafel slope of - 76 mV/dec and an exchange current density of 10.5 μA/cm2. Thus, our work demonstrates that CVD-grown ReSe2 is a promising two- dimensional anisotropic material for applications in the electrocatalytic HER.

Space-confined growth of monolayer ReSe2 under a graphene layer on Au foils

Vertical heterostructures based on two-dimensional(2D)materials have attracted widespread interest for their numerous applications in electronic and optoelectronic devices.Herein,we report the direct construct!on of an abnormal graphene/ReSe2 stack on Au foils by a two-step chemical vapor deposition(CVD)strategy.During the second growth stage,mono layer ReSe2 is found to prefere ntially evolve at the irUerface between the first-grown graphene layer and the Au substrate.The unusual stacking behavior is unraveled by in-situ"cutting open"the upper graphene from the defects to expose the lower ReSe2 using scanning tunneling microscopy(STM).From combination of these results with density functional theory calculations,the domain boundaries and edge sites of graphene are proposed to be adsorption sites for Re and Se precursors,further facilitating the growth of ReSe2 at the van der Waals gap of graphene/Au.This work hereby offers an intriguing strategy for obtaining vertical 2D heterostructures featured with an ultra-clean interface and a designed stacking geometry.

Fast and uniform growth of graphene glass using confined-flow chemical vapor deposition and its unique applications

Fast and uniform growth of high-quality graphene on conventional glass is of great importance for practical applications of graphene glass. We report herein a confined-flow chemical vapor deposition （CVD） approach for the high- efficiency fabrication of graphene glass. The key feature of our approach is the fabrication of a 2-4 μm wide gap above the glass substrate, with plenty of stumbling blocks; this gap was found to significantly increase the collision probability of the carbon precursors and reactive fragments between one another and with the glass surface. As a result, the growth rate of graphene glass increased remarkably, together with an improvement in the growth quality and uniformity as compared to those in the conventional gas flow CVD technique. These high-quality graphene glasses exhibited an excellent defogging performance with much higher defogging speed and higher stability compared to those previously reported. The graphene sapphire glass was found to be an ideal substrate for growing uniform and ultra-smooth aluminum nitride thin films without the tedious pre-deposition of a buffer layer. The presented confined- flow CVD approach offers a simple and low-cost route for the mass production of graphene glass, which is believed to promote the practical applications of various graphene glasses.

Batch synthesis of transfer-free graphene with wafer-scale uniformity

Scalable synthesis of transfer-free graphene over insulators offers exciting opportunity for next-generation electronics and optoelectronics.However,rational design of synthetic protocols to harvest wafer-scale production of directly grown graphene still remains a daunting challenge.Herein we explore a batch synthesis of large-area graphene with wafer-scale uniformity by virtue of direct chemical vapor deposition(CVD)on quartz.Such a controllable CVD approach allows to synthesize 30 pieces of 4-inch graphene wafers in one batch,affording a low fluctuation of optical and electrical properties.Computational fluid dynamics simulations reveal the mechanism of uniform growth,indicating thermal field and confined flow field play leading roles in attaining the batch uniformity.The resulting wafer-scale graphene enables the direct utilization as key components in optical elements.Our method is applicable to other types of insulating substrates(e.g.,sapphire,SiO2/Si,Si3N4),which may open a new avenue for direct manufacture of graphene wafers in an economic fashion.

Transformation of monolayer MoS2 into multiphasic MoTe2： Chalcogen atom-exchange synthesis route

Molybdenum ditelluride （MoTe2）, which is an important transition-metal dichalcogenide, has attracted considerable interest owing to its unique properties, such as its small bandgap and large Seebeck coefficient. However, the batch production of monolayer MoTe2 has been rarely reported. In this study, we demonstrate the synthesis of large-domain （edge length exceeding 30 μm）, monolayer MoTe2 from chemical vapor deposition-grown monolayer MoS2 using a chalcogen atom-exchange synthesis route. An in-depth investigation of the tellurization process reveals that the substitution of S atoms by Te is prevalently initiated at the edges and grain boundaries of the monolayer MoS2, which differs from the homogeneous selenization of MoS2 flakes with the formation of alloyed Mo-S-Se hybrids. Moreover, we detect a large compressive strain （approximately -10%） in the transformed MoTe2 lattice, which possibly drives the phase transition from 2H to 1T＇ at the reaction temperature of 500 ℃. This phase change is substantiated by experimental facts and first-principles calculations. This work introduces a novel route for the templated synthesis of two-dimensional layered materials through atom substitutional chemistry and provides a new pathway for engineering the strain and thus the intriguing physics and chemistry.

Quasi-freestanding, striped WS2 monolayer with an invariable band gap on Au（001）

Revealing the structural/electronic features and interfacial interactions of monolayer MoS2 and WS2 on metals is essential to evaluating the performance of related devices.In this study,we focused on the atomic-scale features of monolayer WS2 on Au（001） synthesized via chemical vapor deposition.Scanning tunneling microscopy and spectroscopy reveal that the WS2/Au（001） system exhibits a striped superstructure similar to that of MoS2/Au（001） but weaker interfacial interactions,as evidenced by experimental and theoretical investigations.Specifically,the WS2/Au（001） band gap exhibits a relatively intrinsic value of ～ 2.0 eV.However,the band gap can gradually decrease to ～ 1.5 eV when the sample annealing temperature increases from ～370 to 720 ℃.In addition,the doping level （or Fermi energy） of monolayer WS2/Au（001） varies little over the valley and ridge regions of the striped patterns because of the homogenous distributions of point defects introduced by annealing.Briefly,this work provides an in-depth investigation into the interfacial interactions and electronic properties of monolayer MX2 on metal substrates.