Two-dimensional(2D)molybdenum disulfide(MoS_(2))holds great potential for various applications such as electronic devices,catalysis,lubrication,anti-corrosion and so on.Thermal evaporation is a versatile thin film dep...Two-dimensional(2D)molybdenum disulfide(MoS_(2))holds great potential for various applications such as electronic devices,catalysis,lubrication,anti-corrosion and so on.Thermal evaporation is a versatile thin film deposition technique,however,the conventional thermal evaporation techniques face challenges in producing uniform thin films of MoS_(2) due to its high melting temperature of 1375℃.As a result,only thick and rough MoS_(2) films can be obtained using these methods.To address this issue,we have designed a vacuum thermal evaporation system specifically for large-scale preparation of MoS_(2) thin films.By using K2MoS4 as the precursor,we achieved reliable deposition of uniform polycrystalline MoS_(2) thin films with a size of 50 mm×50 mm and controllable thickness ranging from 0.8 to 2.4 nm.This approach also allows for patterned deposition of MoS_(2) using shadow masks and sequential deposition of MoS_(2) and tungsten disulfide(WS_(2)),similar to conventional thermal evaporation techniques.Moreover,we have demonstrated the potential applications of the obtained MoS_(2) thin films in field effect transistors(FETs),memristors and electrocatalysts for hydrogen evolution reaction(HER).展开更多
Two-dimensional(2D)transition metal dichalcogenides(TMDCs)showed great potentials in 2D nanoelectronic devices due to their abundant and unique properties.The performance stability of the 2D TMDCs devices turns into o...Two-dimensional(2D)transition metal dichalcogenides(TMDCs)showed great potentials in 2D nanoelectronic devices due to their abundant and unique properties.The performance stability of the 2D TMDCs devices turns into one of the keys for their practical applications but has been rarely explored.Here,we investigated stability of MoS_(2)devices in ambient condition and contributed the device performance degradation to the surface oxidation of the contact metals with low work function,which increased the contact barrier and hindered the electron injection.We developed a new approach to recover the performance of the aged devices through the selective doping of contacts with organolithium,which prolonged the lifetime of MoS_(2)devices.Our work not only provides important insights into the stability of 2D TMDCs devices,but also opens up a new avenue for optimizing the performance of 2D MoS_(2)devices.展开更多
基金supported by the National Natural Science Foundation of China(No.22105114)China Postdoctoral Science Foundation(No.2020TQ0163)Tsinghua-Toyota Joint Research Fund and Tsinghua-Jiangyin Innovation Special Fund(No.2022JYTH01).
文摘Two-dimensional(2D)molybdenum disulfide(MoS_(2))holds great potential for various applications such as electronic devices,catalysis,lubrication,anti-corrosion and so on.Thermal evaporation is a versatile thin film deposition technique,however,the conventional thermal evaporation techniques face challenges in producing uniform thin films of MoS_(2) due to its high melting temperature of 1375℃.As a result,only thick and rough MoS_(2) films can be obtained using these methods.To address this issue,we have designed a vacuum thermal evaporation system specifically for large-scale preparation of MoS_(2) thin films.By using K2MoS4 as the precursor,we achieved reliable deposition of uniform polycrystalline MoS_(2) thin films with a size of 50 mm×50 mm and controllable thickness ranging from 0.8 to 2.4 nm.This approach also allows for patterned deposition of MoS_(2) using shadow masks and sequential deposition of MoS_(2) and tungsten disulfide(WS_(2)),similar to conventional thermal evaporation techniques.Moreover,we have demonstrated the potential applications of the obtained MoS_(2) thin films in field effect transistors(FETs),memristors and electrocatalysts for hydrogen evolution reaction(HER).
基金L.J.acknowledges the National Natural Science Foundation of China(No.21925504)Tsinghua Toyota Joint Research Fund.Z.H.C.acknowledges the National Natural Science Foundation of China(Nos.61674045,61911540074)Fundamental Research Funds for the Central Universities and the Research Funds of Renmin University of China(Nos.21XNLG27,22XNH097).
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDCs)showed great potentials in 2D nanoelectronic devices due to their abundant and unique properties.The performance stability of the 2D TMDCs devices turns into one of the keys for their practical applications but has been rarely explored.Here,we investigated stability of MoS_(2)devices in ambient condition and contributed the device performance degradation to the surface oxidation of the contact metals with low work function,which increased the contact barrier and hindered the electron injection.We developed a new approach to recover the performance of the aged devices through the selective doping of contacts with organolithium,which prolonged the lifetime of MoS_(2)devices.Our work not only provides important insights into the stability of 2D TMDCs devices,but also opens up a new avenue for optimizing the performance of 2D MoS_(2)devices.