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Synthesis of uniform two-dimensional MoS_(2) films via thermal evaporation
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作者 Xue-Wei Lu zhewei li +2 位作者 Chen-Kai Yang Weijia Mou liying Jiao 《Nano Research》 SCIE EI CSCD 2024年第4期3217-3223,共7页
Two-dimensional(2D)molybdenum disulfide(MoS_(2))holds great potential for various applications such as electronic devices,catalysis,lubrication,anti-corrosion and so on.Thermal evaporation is a versatile thin film dep... Two-dimensional(2D)molybdenum disulfide(MoS_(2))holds great potential for various applications such as electronic devices,catalysis,lubrication,anti-corrosion and so on.Thermal evaporation is a versatile thin film deposition technique,however,the conventional thermal evaporation techniques face challenges in producing uniform thin films of MoS_(2) due to its high melting temperature of 1375℃.As a result,only thick and rough MoS_(2) films can be obtained using these methods.To address this issue,we have designed a vacuum thermal evaporation system specifically for large-scale preparation of MoS_(2) thin films.By using K2MoS4 as the precursor,we achieved reliable deposition of uniform polycrystalline MoS_(2) thin films with a size of 50 mm×50 mm and controllable thickness ranging from 0.8 to 2.4 nm.This approach also allows for patterned deposition of MoS_(2) using shadow masks and sequential deposition of MoS_(2) and tungsten disulfide(WS_(2)),similar to conventional thermal evaporation techniques.Moreover,we have demonstrated the potential applications of the obtained MoS_(2) thin films in field effect transistors(FETs),memristors and electrocatalysts for hydrogen evolution reaction(HER). 展开更多
关键词 thermal evaporation molybdenum disulfide TWO-DIMENSIONAL MEMRISTORS hydrogen evolution reaction
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Atmospheric Degradation and Performance Recovery of Two-Dimensional MoS2 Field Effect Transistor
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作者 lifei Sun Zhixing Lu +5 位作者 Rui Xu zhewei li Guanchen Xu Fengen Chen Zhihai Cheng liying Jiao 《Chinese Journal of Chemistry》 SCIE CAS CSCD 2023年第21期2832-2836,共5页
Two-dimensional(2D)transition metal dichalcogenides(TMDCs)showed great potentials in 2D nanoelectronic devices due to their abundant and unique properties.The performance stability of the 2D TMDCs devices turns into o... Two-dimensional(2D)transition metal dichalcogenides(TMDCs)showed great potentials in 2D nanoelectronic devices due to their abundant and unique properties.The performance stability of the 2D TMDCs devices turns into one of the keys for their practical applications but has been rarely explored.Here,we investigated stability of MoS_(2)devices in ambient condition and contributed the device performance degradation to the surface oxidation of the contact metals with low work function,which increased the contact barrier and hindered the electron injection.We developed a new approach to recover the performance of the aged devices through the selective doping of contacts with organolithium,which prolonged the lifetime of MoS_(2)devices.Our work not only provides important insights into the stability of 2D TMDCs devices,but also opens up a new avenue for optimizing the performance of 2D MoS_(2)devices. 展开更多
关键词 MoS_(2) Field effect transistor Atmospheric degradation Performance recovery SEMICONDUCTORS DOPING Oxidation
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