Si/SiC heterostructures with different growth temperatures were prepared on 6 HSiC(0001)by LPCVD.Current mode atomic force microscopy and transmission electron microscopy were employed to investigate the electrical pr...Si/SiC heterostructures with different growth temperatures were prepared on 6 HSiC(0001)by LPCVD.Current mode atomic force microscopy and transmission electron microscopy were employed to investigate the electrical properties and crystalline structure of Si/SiC heterostructures.Face-centered cubic(FCC)on hexagonal close-packing(HCP)epitaxy of the Si(111)/SiC(0001)heterostructure was realized at 900°C.As the growth temperature increases to1050°C,the<110>preferred orientation of the Si film is observed.The Si films on 6 H-SiC(0001)with different growth orientations consist of different distinctive crystalline grains:quasi-spherical grains with a general size of 20μm,and columnar grains with a typical size of 7μm×20μm.The electrical properties are greatly influenced by the grain structures.The Si film with<110>orientation on SiC(0001)consists of columnar grains,which is more suitable for the fabrication of Si/SiC devices due to its low current fluctuation and relatively uniform current distribution.展开更多
基金Supported by the National Key Research and Development Program of China(2018YFB2200500)the National Natural Science Foundation of China(51402230,51177134,21503153)+1 种基金Natural Science Basic Research Plan in Shaanxi Province of China(2017JM6075,2015JM6282)Scientific Research Program Funded by Shaanxi Provincial Education Department(17JK0335)。
文摘Si/SiC heterostructures with different growth temperatures were prepared on 6 HSiC(0001)by LPCVD.Current mode atomic force microscopy and transmission electron microscopy were employed to investigate the electrical properties and crystalline structure of Si/SiC heterostructures.Face-centered cubic(FCC)on hexagonal close-packing(HCP)epitaxy of the Si(111)/SiC(0001)heterostructure was realized at 900°C.As the growth temperature increases to1050°C,the<110>preferred orientation of the Si film is observed.The Si films on 6 H-SiC(0001)with different growth orientations consist of different distinctive crystalline grains:quasi-spherical grains with a general size of 20μm,and columnar grains with a typical size of 7μm×20μm.The electrical properties are greatly influenced by the grain structures.The Si film with<110>orientation on SiC(0001)consists of columnar grains,which is more suitable for the fabrication of Si/SiC devices due to its low current fluctuation and relatively uniform current distribution.
