A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The devic...A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1(blue channel) and long-wavelength infrared band-2(red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under-60 mV, respectively. The optical performance for each channel was achieved using a 2 μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached5.0×10^(11) cm·Hz^(1/2)/W at 6.8 μm and 3.1×10^(11) cm·Hz1^(1/2)/W at 9.1 μm, respectively, at 77 K.展开更多
InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pai...InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency of 26% and an efficiency higher than 16% at 1 W are achieved at continuous-wave operation for a 2-mm-long and 100-μm-wide stripe laser. The maximum output power of a single emitter reaches to 1.4 W at 7 A.19-emitter bars with maximum efficiency higher than 20% and maximum power of 16 W are fabricated. Lasers with the short-period-pair barriers are proved to have improved temperature properties and wavelength stabilities. The characteristic temperature(T_0) is up to 140?C near room temperature(25–55?C).展开更多
Systematic investigation of InAs quantum dot(QD) growth using molecular beam epitaxy has been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the InAs/GaAs quantum dots.By optimi...Systematic investigation of InAs quantum dot(QD) growth using molecular beam epitaxy has been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the InAs/GaAs quantum dots.By optimizing the growth rate, high quality InAs/GaAs quantum dots have been achieved.The areal quantum dot density is 5.9× 1010 cm-2, almost double the conventional density(3.0 × 1010 cm-2).Meanwhile, the linewidth is reduced to 29 meV at room temperature without changing the areal dot density.These improved QDs are of great significance for fabricating high performance quantum dot lasers on various substrates.展开更多
A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate a...A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate and the epitaxial layer,so as to reduce the system defects.At the same time,the influence of different interface structures of Al In Sb on the surface morphology of buffer layer is explored.The propagation mechanism of defects with the growth of buffer layer is compared and analyzed.The relationship between the quality of In Sb thin films and the structure of buffer layer is summarized.Finally,the growth of high quality In Sb thin films is realized.展开更多
In this paper, high material quality Al_(0.4) In_(0.6) AsSb quaternary alloy on GaSb substrates is demonstrated. The quality of these epilayers is assessed using a high-resolution x-ray diffraction, Fourier transform ...In this paper, high material quality Al_(0.4) In_(0.6) AsSb quaternary alloy on GaSb substrates is demonstrated. The quality of these epilayers is assessed using a high-resolution x-ray diffraction, Fourier transform infrared(FTIR) spectrometer,and atomic force microscope(AFM). The x-ray diffraction exhibits high order satellite peaks with a measured period of 31.06 ?(theoretical value is 30.48 ?), the mismatch between the GaSb substrate and AlInAsSb achieves-162 arcsec,and the root-mean square(RMS) roughness for typical material growths has achieved around 1.6 ? over an area of 10 μm×10 μm. At room temperature, the photoluminescence(PL) spectrum shows a cutoff wavelength of 1.617 μm.展开更多
We report a type-Ⅱ GaSb-based interband cascade laser operating a continuous wave at room temperature. The cascade region of interband cascade laser was designed using the ‘W’ configuration of the active quantum we...We report a type-Ⅱ GaSb-based interband cascade laser operating a continuous wave at room temperature. The cascade region of interband cascade laser was designed using the ‘W’ configuration of the active quantum wells and the ‘Carrier Rebalancing’ method in the electron injector. The devices were processed into narrow ridges and mounted epitaxial side down on a copper heat sink. The 25-μm-wide, 3-mm-long ridge without coated facets generated 41.4 mW of continuous wave output power at T = 15℃. And a low threshold current density of 267 A/cm;is achieved. The emission wavelength of the ICL is 3452.3 nm at 0.5 A.展开更多
The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax...The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax the strain and block defects at each interface of the layers. Meanwhile, adding Sb to GaAs is also beneficial to suppressing the formation of dislocations in the subsequent materials. The influences of the growth temperature of the step-graded GaAsxSb1-x metamorphic buffer layer on the electron mobility and surface topography are investigated for a series of samples. Based on the atomic force microscopy(AFM), high resolution x-ray diffraction(HRXRD), reciprocal space map(RSM), and Hall measurements, the crystal quality and composition of GaAsxSb1-x layer are seen to strongly depend on growth temperature while keeping the Ga growth rate and Ⅴ/Ⅲ ratio constant. The results show that the highest electron mobility is 10270 cm^2/V·s and the roughness is 4.3 nm for the step-graded GaAsxSb1-x metamorphic buffer layer grown at a temperature of 410℃.展开更多
We compare the effect of InGaAs/GaAs strained-layer superlattice(SLS) with that of GaAs thick buffer layer(TBL)serving as a dislocation filter layer. The InGaAs/GaAs SLS is found to be more effective than GaAs TBL...We compare the effect of InGaAs/GaAs strained-layer superlattice(SLS) with that of GaAs thick buffer layer(TBL)serving as a dislocation filter layer. The InGaAs/GaAs SLS is found to be more effective than GaAs TBL in blocking the propagation of threading dislocations, which are generated at the interface between the GaAs buffer layer and the Si substrate. Through testing and analysis, we conclude that the weaker photoluminescence for quantum dots(QDs) on Si substrate is caused by the quality of capping In;Ga;As and upper GaAs. We also find that the periodic misfits at the interface are related to the initial stress release of GaAs islands, which guarantees that the upper layers are stress-free.展开更多
Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements,which is a very important an...Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements,which is a very important and popular research direction at present.As a IV-V two-dimensional material,silicon phosphide(SiP)has obvious in-plane anisotropy and exhibits excellent optical and electrical anisotropy properties.Herein,the optical anisotropy of SiP is studied by spectrometric ellipsometry measurements and polarization-resolved optical microscopy,and its electrical anisotropy is tested by SiP-based field-effect transistor.In addition,the normal and anisotropic photoelectric performance of SiP is shown by fabricating a photodetector and measuring it.In various measurements,SiP exhibits obvious anisotropy and good photoelectric performance.This work provides basic optical,electrical,and photoelectric performance information of SiP,and lays a foundation for further study of SiP and applications of SiP-based devices.展开更多
基金supported by the National Key Technology R&D Program of China(Grant Nos.2018YFA0209104 and 2016YFB0402403)
文摘A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1(blue channel) and long-wavelength infrared band-2(red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under-60 mV, respectively. The optical performance for each channel was achieved using a 2 μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached5.0×10^(11) cm·Hz^(1/2)/W at 6.8 μm and 3.1×10^(11) cm·Hz1^(1/2)/W at 9.1 μm, respectively, at 77 K.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61790580 and 61435012)the National Basic Research Program of China(Grant No.2014CB643903)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)
文摘InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency of 26% and an efficiency higher than 16% at 1 W are achieved at continuous-wave operation for a 2-mm-long and 100-μm-wide stripe laser. The maximum output power of a single emitter reaches to 1.4 W at 7 A.19-emitter bars with maximum efficiency higher than 20% and maximum power of 16 W are fabricated. Lasers with the short-period-pair barriers are proved to have improved temperature properties and wavelength stabilities. The characteristic temperature(T_0) is up to 140?C near room temperature(25–55?C).
基金Project supported by the National Key Technology Research and Development Program of China(Grant No.2018YFA0306101)the National Natural Science Foundation of China(Grant No.61505196)+1 种基金the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the Guangdong Science and Technology Project,China(Grant No.20180329)
文摘Systematic investigation of InAs quantum dot(QD) growth using molecular beam epitaxy has been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the InAs/GaAs quantum dots.By optimizing the growth rate, high quality InAs/GaAs quantum dots have been achieved.The areal quantum dot density is 5.9× 1010 cm-2, almost double the conventional density(3.0 × 1010 cm-2).Meanwhile, the linewidth is reduced to 29 meV at room temperature without changing the areal dot density.These improved QDs are of great significance for fabricating high performance quantum dot lasers on various substrates.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61774130,11474248,61790581,and 51973070)the Ph.D.Program Foundation of the Ministry of Education of China(Grant No.20105303120002)the National Key Technology Research and Development Program of China(Grant No.2018YFA0209101)。
文摘A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate and the epitaxial layer,so as to reduce the system defects.At the same time,the influence of different interface structures of Al In Sb on the surface morphology of buffer layer is explored.The propagation mechanism of defects with the growth of buffer layer is compared and analyzed.The relationship between the quality of In Sb thin films and the structure of buffer layer is summarized.Finally,the growth of high quality In Sb thin films is realized.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61774130 11474248,61176127,61006085,61274013,and 61306013the Key Program for International Science and Technology Cooperation Projects of China(Grant No.2011DFA62380)the Ph.D. Programs Foundation of the Ministry of Education of China(Grant No.20105303120002)
文摘In this paper, high material quality Al_(0.4) In_(0.6) AsSb quaternary alloy on GaSb substrates is demonstrated. The quality of these epilayers is assessed using a high-resolution x-ray diffraction, Fourier transform infrared(FTIR) spectrometer,and atomic force microscope(AFM). The x-ray diffraction exhibits high order satellite peaks with a measured period of 31.06 ?(theoretical value is 30.48 ?), the mismatch between the GaSb substrate and AlInAsSb achieves-162 arcsec,and the root-mean square(RMS) roughness for typical material growths has achieved around 1.6 ? over an area of 10 μm×10 μm. At room temperature, the photoluminescence(PL) spectrum shows a cutoff wavelength of 1.617 μm.
基金Project supported by the Major Program of the National Natural Science Foundation of China(Grant No.61790580)the National Natural Science Foundation of China(Grant No.61435012)the National Basic Research Program of China(Grant No.2014CB643903)
文摘We report a type-Ⅱ GaSb-based interband cascade laser operating a continuous wave at room temperature. The cascade region of interband cascade laser was designed using the ‘W’ configuration of the active quantum wells and the ‘Carrier Rebalancing’ method in the electron injector. The devices were processed into narrow ridges and mounted epitaxial side down on a copper heat sink. The 25-μm-wide, 3-mm-long ridge without coated facets generated 41.4 mW of continuous wave output power at T = 15℃. And a low threshold current density of 267 A/cm;is achieved. The emission wavelength of the ICL is 3452.3 nm at 0.5 A.
基金Project supported by the National Defense Advanced Research Project,China(Grant No.315 xxxxx301)the National Defense Innovation Program,China(Grant No.48xx4)+2 种基金the National Key Technologies Research and Development Program,China(Grant No.2018YFA0306101)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the National Natural Science Foundation of China(Grant No.61505196)
文摘The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax the strain and block defects at each interface of the layers. Meanwhile, adding Sb to GaAs is also beneficial to suppressing the formation of dislocations in the subsequent materials. The influences of the growth temperature of the step-graded GaAsxSb1-x metamorphic buffer layer on the electron mobility and surface topography are investigated for a series of samples. Based on the atomic force microscopy(AFM), high resolution x-ray diffraction(HRXRD), reciprocal space map(RSM), and Hall measurements, the crystal quality and composition of GaAsxSb1-x layer are seen to strongly depend on growth temperature while keeping the Ga growth rate and Ⅴ/Ⅲ ratio constant. The results show that the highest electron mobility is 10270 cm^2/V·s and the roughness is 4.3 nm for the step-graded GaAsxSb1-x metamorphic buffer layer grown at a temperature of 410℃.
基金Project supported by the National Key Research and Development Program of China(Grant No.2018YFA0306101)the Scientific Instrument Developing Project of Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the National Natural Science Foundation of China(Grant Nos.61790581,61435012,and 61505196)
文摘We compare the effect of InGaAs/GaAs strained-layer superlattice(SLS) with that of GaAs thick buffer layer(TBL)serving as a dislocation filter layer. The InGaAs/GaAs SLS is found to be more effective than GaAs TBL in blocking the propagation of threading dislocations, which are generated at the interface between the GaAs buffer layer and the Si substrate. Through testing and analysis, we conclude that the weaker photoluminescence for quantum dots(QDs) on Si substrate is caused by the quality of capping In;Ga;As and upper GaAs. We also find that the periodic misfits at the interface are related to the initial stress release of GaAs islands, which guarantees that the upper layers are stress-free.
基金the National Natural Science Foundation of China(Nos.62125404,62174155,62004193,12004375,and 51727809)the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB43000000)the CAS-JSPS Cooperative Research Project(No.GJHZ2021131)the Youth Innovation Promotion Association of CAS(No.2022112).
文摘Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements,which is a very important and popular research direction at present.As a IV-V two-dimensional material,silicon phosphide(SiP)has obvious in-plane anisotropy and exhibits excellent optical and electrical anisotropy properties.Herein,the optical anisotropy of SiP is studied by spectrometric ellipsometry measurements and polarization-resolved optical microscopy,and its electrical anisotropy is tested by SiP-based field-effect transistor.In addition,the normal and anisotropic photoelectric performance of SiP is shown by fabricating a photodetector and measuring it.In various measurements,SiP exhibits obvious anisotropy and good photoelectric performance.This work provides basic optical,electrical,and photoelectric performance information of SiP,and lays a foundation for further study of SiP and applications of SiP-based devices.