Si C monocrystal substrates are implanted by Pd ions with different ion-beam energies and fluences,and the effects of Pd ion implantation on wettability of Si/Si C and Al–12 Si/Si C systems are investigated by the se...Si C monocrystal substrates are implanted by Pd ions with different ion-beam energies and fluences,and the effects of Pd ion implantation on wettability of Si/Si C and Al–12 Si/Si C systems are investigated by the sessile drop technique.The decreases of contact angles of the two systems are disclosed after the ion implantation,which can be attributed to the increase of surface energy（σ（SV）） of Si C substrate derived from high concentration of defects induced by the ionimplantation and to the decrease of solid–liquid surface energy（σ（SL）） resulting from the increasing interfacial interactions.This study can provide guidance in improving the wettability of metals on Si C and the electronic packaging process of Si C substrate.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51572112 and 51172177)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20151340)+2 种基金the Six Talent Peaks Project of Jiangsu Province,China(Grant Nos.2014-XCL-002 and TD-XCL-004)the Innovation/Entrepreneurship Program of Jiangsu Province,China(Grant No.[2015]26)the Qing Lan Project of Jiangsu Province,China(Grant No.[2016]15)
文摘Si C monocrystal substrates are implanted by Pd ions with different ion-beam energies and fluences,and the effects of Pd ion implantation on wettability of Si/Si C and Al–12 Si/Si C systems are investigated by the sessile drop technique.The decreases of contact angles of the two systems are disclosed after the ion implantation,which can be attributed to the increase of surface energy（σ（SV）） of Si C substrate derived from high concentration of defects induced by the ionimplantation and to the decrease of solid–liquid surface energy（σ（SL）） resulting from the increasing interfacial interactions.This study can provide guidance in improving the wettability of metals on Si C and the electronic packaging process of Si C substrate.
