We investigate the pressure spectral characteristics and the effective tuning of defect emissions in hexagonal boron nitride(hBN) at low temperatures using a diamond anvil cell(DAC). It is found that the redshift rate...We investigate the pressure spectral characteristics and the effective tuning of defect emissions in hexagonal boron nitride(hBN) at low temperatures using a diamond anvil cell(DAC). It is found that the redshift rate of emission energy is up to 10 meV/GPa, demonstrating a controllable tuning of single photon emitters through pressure.Based on the distribution character of pressure coefficients as a function of wavelength, different kinds of atomic defect states should be responsible for the observed defect emissions.展开更多
基金Supported by the Postdoctoral Science Foundation of China under Grant No.Y8T0111001.
文摘We investigate the pressure spectral characteristics and the effective tuning of defect emissions in hexagonal boron nitride(hBN) at low temperatures using a diamond anvil cell(DAC). It is found that the redshift rate of emission energy is up to 10 meV/GPa, demonstrating a controllable tuning of single photon emitters through pressure.Based on the distribution character of pressure coefficients as a function of wavelength, different kinds of atomic defect states should be responsible for the observed defect emissions.