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Formation and growth of Cu-Al IMCs and their effect on electrical property of electroplated Cu/Al laminar composites
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作者 Jian ZHANG Bin-hao WANG +4 位作者 Guo-hong CHEN Ruo-min WANG Chun-hui MIAO zhi-xiang zheng Wen-ming TANG 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2016年第12期3283-3291,共9页
Cu/Al laminar composite was prepared by dipping Zn layer and then electroplating Cu thick layer on pure Al sheet.During annealing the Cu/Al composites at temperature from 473 to 673 K, the Cu/Al interfacial diffusion ... Cu/Al laminar composite was prepared by dipping Zn layer and then electroplating Cu thick layer on pure Al sheet.During annealing the Cu/Al composites at temperature from 473 to 673 K, the Cu/Al interfacial diffusion and reaction and itskinetics and also the electrical resistivity of the composites were studied. The results show that no Cu?Al IMC layer is observable asthe composites are annealed at 473 K for time till 360 h, indicating that the Zn intermediate layer can effectively suppress the Cu/Alinterfacial diffusion. However, as the composites are annealed at 573 K and above, Zn atoms in the Zn layer dissolve into the Culayer. Tri-layered reaction product of CuAl2/CuAl/Cu9Al4 then forms from the Al side to the Cu side. The IMC layer follows thediffusion-controlled growth kinetics. Electrical resistivity of the Cu/Al composites increases with the increase of the annealingtemperature and time. 展开更多
关键词 Cu/Al intermetallics laminar composite ELECTROPLATING interfacial reaction growth kinetics electrical resistivity
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