In this work,(-201)β-Ga2O3 films are grown on GaN substrate by metal organic chemical vapor deposition(MOCVD).It is revealed that theβ-Ga2O3 film grown on GaN possesses superior crystal quality,material homogeneity ...In this work,(-201)β-Ga2O3 films are grown on GaN substrate by metal organic chemical vapor deposition(MOCVD).It is revealed that theβ-Ga2O3 film grown on GaN possesses superior crystal quality,material homogeneity and surface morphology than the results of common heteroepitaxialβ-Ga2O3 film based on sapphire substrate.Further,the relevance between the crystal quality of epitaxialβ-Ga2O3 film and theβ-Ga2O3/GaN interface behavior is investigated.Transmission electron microscopy result indicates that the interface atom refactoring phenomenon is beneficial to relieve the mismatch strain and improve the crystal quality of subsequentβ-Ga2O3 film.Moreover,the energy band structure ofβ-Ga2O3/GaN heterostructure grown by MOCVD is investigated by X-ray photoelectron spectroscopy and a large conduction band offset of 0.89 eV is obtained.The results in this work not only convincingly demonstrate the advantages ofβ-Ga2O3 films grown on GaN substrate,but also show the great application potential of MOCVDβ-Ga2O3/GaN heterostructures in microelectronic applications.展开更多
基金supported by the Fundamental Research Funds for the Central Universities(Grant No.JB181108)the National Natural Science Foundation of China(Grant No.61904139)the Science and Technology Program of Guangzhou(Grant No.201904010457)。
文摘In this work,(-201)β-Ga2O3 films are grown on GaN substrate by metal organic chemical vapor deposition(MOCVD).It is revealed that theβ-Ga2O3 film grown on GaN possesses superior crystal quality,material homogeneity and surface morphology than the results of common heteroepitaxialβ-Ga2O3 film based on sapphire substrate.Further,the relevance between the crystal quality of epitaxialβ-Ga2O3 film and theβ-Ga2O3/GaN interface behavior is investigated.Transmission electron microscopy result indicates that the interface atom refactoring phenomenon is beneficial to relieve the mismatch strain and improve the crystal quality of subsequentβ-Ga2O3 film.Moreover,the energy band structure ofβ-Ga2O3/GaN heterostructure grown by MOCVD is investigated by X-ray photoelectron spectroscopy and a large conduction band offset of 0.89 eV is obtained.The results in this work not only convincingly demonstrate the advantages ofβ-Ga2O3 films grown on GaN substrate,but also show the great application potential of MOCVDβ-Ga2O3/GaN heterostructures in microelectronic applications.
