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The dielectric behavior and efficient microwave absorption of doped nanoscale LaMnO_(3)at elevated temperature 被引量:1
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作者 zhigang mu Guoke Wei +4 位作者 Hang Zhang Lu Gao Yue Zhao Shaolong Tang Guangbin Ji 《Nano Research》 SCIE EI CSCD 2022年第8期7731-7741,共11页
LaMnO_(3)perovskite has great potential in microwave absorption at high temperature due to its complex doping effect and super stability.The current research mainly focuses on the doping ratio regulation,while the mec... LaMnO_(3)perovskite has great potential in microwave absorption at high temperature due to its complex doping effect and super stability.The current research mainly focuses on the doping ratio regulation,while the mechanism of doping effect at high temperature is still lack of sufficient investigation.In this work,La1−xSrxMn1−yFeyO_(3)(LaMnO_(3),La_(0.7)Sr_(0.3)MnO_(3),and La_(0.7)Sr_(0.3)Mn_(0.8)Fe_(0.2)O_(3))nanostructures with different doping sites were successfully prepared by the solid phase reaction method.Then,the high temperature dielectric test samples were obtained by mixing with cordierite(2MgO·2Al_(2)O_(3)·5SiO_(2)(MAS)).The results showed that the temperature dependence of Mn ion spin state had a significant impact on the high temperature dielectric behavior of La_(1−x)Sr_(x)Mn_(1−y)FeyO_(3).Particularly,when the thickness is only 1.9 mm,La_(0.7)Sr_(0.3)Mn_(0.8)Fe_(0.2)O_(3)/MAS can achieve the widest bandwidth of 4.2 GHz covered the entire X-band(8.2–12.4 GHz)and a minimum reflection loss(RL)value of−17.99 dB at 500℃.In order to improve the operating temperature of La_(0.7)Sr_(0.3)Mn_(0.8)Fe_(0.2)O_(3)/MAS,a cellular array structure was designed by using computer simulation technology(CST)software to introduce magnetic loss.When the outer length of the hexagon is 1 mm and the coating thickness is 1.9 mm,the widest bandwidth covers the X-band and the minimum RL value is−15.35 dB at 800℃.Therefore,La_(0.7)Sr_(0.3)Mn_(0.8)Fe_(0.2)O_(3)has a great prospect as an efficient high temperature microwave absorber. 展开更多
关键词 microwave absorption DOPING PEROVSKITE high temperature dielectric behavior
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