11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance.The breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V.The maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the AlGaN/GaN HEMTs exceed 30 and 20 GHz,respectively.The results demonstrate the potential of AlGaN/GaN HEMTs on freestanding GaN substrates for microwave power applications.

2.83-kV double-layered NiO/β-Ga_(2)O_(3) vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm^(2)

This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bottom 60-nm p-NiO layer fully covers theβ-Ga_(2)O_(3) wafer,while the geometry of the upper 60-nm p-NiO layer is 10μm larger than the square anode elec-trode.Compared with a single-layer JTE,the electric field concentration is inhibited by double-layer JTE structure effectively,resulting in the breakdown voltage being improved from 2020 to 2830 V.Moreover,double p-typed NiO layers allow more holes into the Ga_(2)O_(3) drift layer to reduce drift resistance.The specific on-resistance is reduced from 1.93 to 1.34 mΩ·cm^(2).The device with DL-JTE shows a power figure-of-merit(PFOM)of 5.98 GW/cm^(2),which is 2.8 times larger than that of the conven-tional single-layer JTE structure.These results indicate that the double-layer JTE structure provides a viable way of fabricating high-performance Ga_(2)O_(3) HJDs.

Source-field-plated Ga_2O_3 MOSFET with a breakdown voltage of 550 V

Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor deposition(MOCVD) on an Fedoped semi-insulating(010) Ga_2O_3 substrate. The structure consisted of a 400 nm unintentionally doped(UID) Ga_2O_3 buffer layer and an 80 nm Si-doped channel layer. A high k HfO_2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at V_(gs) of 3 V. The off-state current was as low as 7.1 ×10^(-11) A/mm, and the drain current I_(ON)/I_(OFF) ratio reached 10~9. The transistors exhibited three-terminal off-state breakdown voltages of 450 and 550 V, corresponding to gate-to-drain spacing of 4 and 8 μm, respectively.

Vanadium-Doped Semi-Insulating 6H-SiC for Microwave Power Device Applications

Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1×106 Ωcm were achieved by vanadium doping during sublimation. Secondary-ion-mass-spectrometry (SIMS) was employed to determine the concen-tration of impurities in the crystals, such as B, Al, V and N. These results indicated that the concentration of nitrogen and aluminum kept on decreasing and the concentration of B and V was almost constant during the whole growth. An inner crucible was used to control the exhausting of vanadium, which made the uniformity of the high resistivity (>1×106 Ωcm) in the wafer up to 80%. High-performance AlGaN/GaN high-electron-mobility-transistor (HEMT) materials and devices were grown and fabricated on semi-insulating 6H-SiC sub-strates. The two-dimensional electron gas (2DEG) mobility at room-temperature was 1795 cm2/V·s. The charge carrier concentration of the substrate determined by capacitance-voltage (C-V) test was 7.3×1015 cm-3. The device with a gate width of 1 mm exhibits a maximum output power of 5.5 W at 8 GHz, which proves the semi-insulating property of the substrates indirectly.

Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

In this work,we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra,pulsed I–V characteristics analysis,and radio frequency performances measurements.It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density.Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors.This work should be helpful for further performance improvement of the microwave power diamond devices.

Comparative proteomic profiles of resistant/susceptible cucumber leaves in response to downy mildew infection

Downy mildew is a serious disease in cucumber production worldwide,which is caused by Pseudoperonospora cubensis(Berk.&Curt.)Rostov.Underlying the mechanism of cucumber response to downy mildew infection is important for breeding improvement and production;however,the research remains largely elusive.A comparative proteomic approach was used to reveal the differential accumulation of the proteomes from leaves of cucumber(susceptible line and resistant line)that were inoculated with P.cubensis or not by two-dimensional electrophoresis and MALDI-TOF/TOF MS.A total of 76 protein spots were successfully identified with significant changes in abundance(>2-fold,P<0.05)in downy mildew infected or not leaves for the susceptible line and resistant line.By the functional annotation,these proteins were classified into 8 groups including photosynthesis(29%),energy and metabolism(29%),cell rescue and defense(17%),and protein biosynthesis,folding and degradation(13%),unclassified(7%),nucleotide metabolism(3%),signal transduction(1%)and cellular process(1%).Among the 17 differentially expressed proteins between the resistant and susceptible cucumber line,most of the protein spots were concentrated in cell rescue and defense(4)and energy and metabolism(4).Moreover,a schematic diagram containing majority of the metabolic pathways of cucumber leaves in response to downy mildew was proposed.This network revealed the positive effect of several functional components in cucumber seedlings’resistant to downy mildew such as accumulation of energy supply and resistance-related proteins,hastened protein metabolism and photorespiratory,inhibited photosynthesis,and triggered photosystem repair and programmed cell death.Taken together,these results have advanced a further understanding of the key metabolic pathways of cucumber resistance to downy mildew and pathogen control in the proteomic level.

Epitaxial graphene gas sensors on SiC substrate with high sensitivity

2D material of graphene has inspired huge interest in fabricating of solid state gas sensors.In this work,epitaxial graphene,quasi-free-standing graphene,and CVD epitaxial graphene samples on SiC substrates are used to fabricate gas sensors.Defects are introduced into graphene using SF6 plasma treatment to improve the performance of the gas sensors.The epitaxial graphene shows high sensitivity to NO2 with response of 105.1%to 4 ppm NO2 and detection limit of 1 ppb.The higher sensitivity of epitaxial graphene compared to quasi-free-standing graphene,and CVD epitaxial graphene was found to be related to the different doping types of the samples.

Coeffect of trapping behaviors on the performance of GaN-based devices

Trap-induced current collapse has become one of the critical issues hindering the improvement of Ga Nbased microwave power devices. It is difficult to study the behavior of each trapping effect separately with the experimental measurement. Transient simulation is a useful technique for analyzing the mechanism of current collapse. In this paper, the coeffect of surface-and bulk-trapping behaviors on the performance of Al Ga N/Ga N HEMTs is investigated based on the two-dimensional(2 D) transient simulation. In addition, the mechanism of trapping effects is analyzed from the aspect of device physics. Two simulation models with different types of traps are used for comparison, and the simulated results reproduced the experimental measured data. It is found that the final steady-state current decreases when both the surface and bulk traps are taken into account in the model.However, contrary to the expectation, the total current collapse is dramatically reduced(e.g. from 18% to 4% for the 90 nm gate-length device). The results suggest that the surface-related current collapse of Ga N-based HEMTs may be mitigated in some degree due to the participation of bulk traps with short time constant. The work in this paper will be helpful for further optimization design of material and device structures.

High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area

Ultraviolet(UV) detectors with large photosensitive areas are more advantageous in low-level UV detection applications. In this Letter, high-performance 4 H-SiC p-i-n avalanche photodiodes(APDs) with large active area(800 μm diameter) are reported. With the optimized epitaxial structure and device fabrication process,a high multiplication gain of 1.4 × 10^6 is obtained for the devices at room temperature, and the dark current is as low as ~10 p A at low reverse voltages. In addition, record external quantum efficiency of 85.5% at 274 nm is achieved, which is the highest value for the reported Si C APDs. Furthermore, the rejection ratio of UV to visible light reaches about 10^4. The excellent performance of our devices indicates a tremendous improvement for largearea SiC APD-based UV detectors. Finally, the UV imaging performance of our fabricated 4 H-SiC p-i-n APDs is also demonstrated for system-level applications.

Brief Review of Silver Sinter-bonding Processing for Packaging High-temperature Power Devices

Silver sintering is receiving increasing attention due to its novel die-attach technique for high-temperature power electronics.Excellent thermal conductivity,high melting point/remelting temperature and low-temperature sintering behaviors of the silver sintered attachment meet the requirements of high-temperature applications for power devices,specifically SiC devices.The merits and demerits of the existing pressure-assisted sintering and pressure-less sintering techniques using nano-scale,micro-scale and micro-nano-scale hybrid silver sintered materials are separately presented.The emerging rapid sintering approaches,such as the electric-assisted approach,are briefly introduced and the technical outlook is provided.In addition,the study highlights the importance of creating a brief resource guide on using the correct sintering methods.

Socioeconomic disparities of patients with acute kidney injury:subgroup analysis of local hospitals in China from a national survey

To the Editor:Acute kidney injury(AKI)is a common public health problem worldwide,which can adversely affect patients’quality of life and even lead to death.^([1])Academic hospitals play an important role in admitting and providing treatment for patients with AKI,but limited data exist regarding the characteristics of patients in county-level local hospitals.Our research group initiated a comprehensive survey as part of the International Society of Nephrology’s"0 by 25"project(eliminating all deaths related to untreated AKI by 2025)for investigating the disease burden of AKI and its associated risk factors and prognosis through 22 province-level regions of China in 2013.