Scalable preparation of water-soluble ink of few-layered WSe2 nanosheets for large-area electronics

Few-layer two-dimensional(2D)semiconductor nanosheets with a layer-dependent band gap are attractive building blocks for large-area thin-film electronics.A general approach is developed to fast prepare uniform and phase-pure 2HWSe2 semiconducting nanosheets at a large scale,which involves the supercritical carbon dioxide(SC-CO2)treatment and a mild sonication-assisted exfoliation process in aqueous solution.The as-prepared 2H-WSe2 nanosheets preserve the intrinsic physical properties and intact crystal structures,as confirmed by Raman,x-ray photoelectron spectroscopy(XPS),and scanning transmission electron microscope(STEM).The uniform 2H-WSe2 nanosheets can disperse well in water for over six months.Such good dispersivity and uniformity enable these nanosheets to self-assembly into thickness-controlled thin films for scalable fabrication of large-area arrays of thin-film electronics.The electronic transport and photoelectronic properties of the field-effect transistor based on the self-assembly 2H-WSe2 thin film have also been explored.

Modification of Natural Rubber Latex by Graft Copolymerization of 2-Ethylhexyl Acrylate and Methacrylic Acid

Natural rubber(NR)grafted with 2-ethylhexyl acrylate(2-EHA)and methacrylic acid(MAA,collectively NR-g-PEHA/MAA)was synthesized by emulsion polymerization.Tetraethylenepentamine and cumene hydroperoxide were used as redox initiators.The successful grafting of 2-EHA and MAA onto NR was confirmed by Fourier transform infrared spectroscopy.The morphology of the NR latex particles was observed by transmission electron microscopy.The effects of reaction temperature,initiator dosage,feeding mode,and hard monomer content on the mechanical properties of the modified NR film were investigated.Grafted polymer chains were unevenly wrapped on the outside of NR particles,and smaller particles were more easily grafted.Crosslinking was characterized using a toluene swelling method.Thermal stability and glass transition temperature were examined by differential scanning calorimetry and thermogravimetric analysis.The results showed that the thermal stability of NR-g-PEHA/MAA had been improved,and the glass transition temperature(Tg)was unchanged.

Ferroelectric-gated ReS_(2)field-effect transistors for nonvolatile memory

Ferroelectric field-effect transistors(FeFET)with nondestructive readout capability have emerged as an attractive candidate for next-generation nonvolatile memory technology.Herein,we demonstrate ferroelectric-gated nonvolatile memory featuring a top gate architecture by combining multi-layer ReS_(2)with ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE))copolymer films.The ReS_(2)FeFET using hBN as substrate shows a large memory window of~30 V.Repeated write/erase operations are successfully performed by applying pulse voltage of±25 V with 1 ms width to the ferroelectric P(VDF-TrFE),and an ultra-high write/erase ratio of~107 can be achieved.Furthermore,the ReS_(2)FeFET shows stable data retention capability of longer than 2,000 s and reliable endurance of greater than 2,000 cycles.These characteristics highlight that such ferroelectricgated nonvolatile memory has great potential in future non-volatile memory applications.