期刊文献+
共找到3篇文章
< 1 >
每页显示 20 50 100
High on-state current p-type tunnel effect transistor based on doping modulation
1
作者 孙佳乐 张玉明 +4 位作者 吕红亮 吕智军 朱翊 潘禹澈 芦宾 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第7期577-581,共5页
To solve the problem of the low on-state current in p-type tunnel field-effect transistors(p-TFETs),this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the infl... To solve the problem of the low on-state current in p-type tunnel field-effect transistors(p-TFETs),this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier.Doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated,and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same structure.This method provides a new idea for the realization of high on-state current TFET devices. 展开更多
关键词 tunnel field-effect transistors(TFET) band-to-band tunneling(BTBT) on-state current doping modulation
下载PDF
MoS_(2)/Si tunnel diodes based on comprehensive transfer technique
2
作者 朱翊 吕红亮 +4 位作者 张玉明 贾紫骥 孙佳乐 吕智军 芦宾 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第1期106-112,共7页
Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor(TFET) is considered as one of the most promising low-power devi... Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor(TFET) is considered as one of the most promising low-power devices that can simultaneously obtain low off-state current(IOFF), high on-state current(ION) and steep subthreshold swing(SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need.The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabricating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable.Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the deformation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film,which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape(TRT) is proposed. Based on the method we proposed, the MoS_(2)/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS_(2) film with the relatively high crystal quality is confirmed by atomic force microscopy(AFM), scanning electron microscopy(SEM), and Raman characterizations. Besides, the prominent negative differential resistance(NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS_(2)/Si heterojunction. The bilayer MoS_(2)/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices. 展开更多
关键词 2D/3D heterostructure transfer technique tunnel diode MoS_(2)/Si
下载PDF
Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source
3
作者 zhijun lyu Hongliang Lu +5 位作者 Yuming Zhang Yimen Zhang Bin Lu Yi Zhu Fankang Meng Jiale Sun 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第5期540-545,共6页
A novel vertical graded source tunnel field-effect transistor(VGS-TFET)is proposed to improve device performance.By introducing a source with linearly graded component,the on-state current increases by more than two d... A novel vertical graded source tunnel field-effect transistor(VGS-TFET)is proposed to improve device performance.By introducing a source with linearly graded component,the on-state current increases by more than two decades higher than that of the conventional GaAs TFETs without sacrificing the subthreshold swing(SS)due to the improved band-to-band tunneling efficiency.Compared with the conventional TFETs,much larger drive current range can be achieved by the proposed VGS-TFET with SS below the thermionic limitation of 60 mV/dec.Furthermore,the minimum SS about 20 mV/dec indicates its promising potential for further ultralow power applications. 展开更多
关键词 vertical graded source band-to-band tunneling(BTBT) tunnel field-effect transistor(TFET)
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部