Massive oily wastewater discharged from industrial production and human daily life have been an urgent environmental and ecological challenge.Superhydrophobic materials have attracted tremendous attention due to their...Massive oily wastewater discharged from industrial production and human daily life have been an urgent environmental and ecological challenge.Superhydrophobic materials have attracted tremendous attention due to their unique properties and potential applications in the treatment of wastewater.In this study,a novel superhydrophobic/superoleophilic composite melamine sponge modified with dual silanized SiO_(2) microspheres was fabricated simply by a two-step sol-gel method using vinyltriethoxysilane and hexadecyltrimethoxysilane as functional agent,which exhibited a water contact angle of 153.2°and a water sliding contact angle of 4.8°.Furthermore,the composite sponge showed the excellent oil adsorption performance and the compressive elasticity reaching up to 130 g·g^(-1) of dichloromethane and 33.1 kPa of compressive stress.It was worth noting that the composite sponge presented the excellent separation efficiency(up to 99.5%)in the processes of continuous oil/water separation.The robust superhydrophobic composite melamine sponge provided the possibility with the practical application for oil-water separation.展开更多
In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally fallin...In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally falling below−20.0 dB.To address this issue,we present a novel wavelength conversion device assisted by a waveguide amplifier,incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier,thereby achieving a notable conversion efficiency exceeding 0 dB.The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter,which enables an upsurge in conversion efficiency to−15.54 dB under 100 mW of pump power.Furthermore,the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB.Avoiding the use of external optical amplifiers,this device enables efficient and high-bandwidth wavelength conversion,showing promising applications in various fields,such as optical communication,sensing,imaging,and beyond.展开更多
Serving as the electrical to optical converter,the on-chip silicon light source is an indispensable component of silicon photonic technologies and has long been pursued.Here,we briefly review the history and recent pr...Serving as the electrical to optical converter,the on-chip silicon light source is an indispensable component of silicon photonic technologies and has long been pursued.Here,we briefly review the history and recent progress of a few promising contenders for on-chip light sources in terms of operating wavelength,pump condition,power consumption,and fabrication process.Additionally,the performance of each contender is also assessed with respect to thermal stability,which is a crucial parameter to consider in complex optoelectronic integrated circuits(OEICs)and optical interconnections.Currently,III-V-based silicon(Si)lasers formed via bonding techniques demonstrate the best performance and display the best opportunity for commercial usage in the near future.However,in the long term,direct hetero-epitaxial growth of III–V materials on Si seems more promising for low-cost,high-yield fabrication.The demonstration of high-performance quantum dot(QD)lasers monolithically grown on Si strongly forecasts its feasibility and enormous potential for on-chip lasers.The superior temperature-insensitive characteristics of the QD laser promote this design in large-scale high-density OEICs.The Germanium(Ge)-on-Si laser is also competitive for large-scale monolithic integration in the future.Compared with a III-V-based Si laser,the biggest potential advantage of a Ge-on-Si laser lies in its material and processing compatibility with Si technology.Additionally,the versatility of Ge facilitates photon emission,modulation,and detection simultaneously with a simple process complexity and low cost.展开更多
We review current silicon photonic devices and their performance in connection with energy consumption.Four critical issues are identified to lower energy consumption in devices and systems: reducing the influence of ...We review current silicon photonic devices and their performance in connection with energy consumption.Four critical issues are identified to lower energy consumption in devices and systems: reducing the influence of the thermo-optic effect, increasing the wall-plug efficiency of lasers on silicon, optimizing energy performance of modulators, and enhancing the sensitivity of photodetectors. Major conclusions are(1) Mach–Zehnder interferometer-based devices can achieve athermal performance without any extra energy consumption while microrings do not have an efficient passive athermal solution;(2) while direct bonded III–V-based Si lasers can meet system power requirement for now, hetero-epitaxial grown III–V quantum dot lasers are competitive and may be a better option for the future;(3) resonant modulators, especially coupling modulators, are promising for low-energy consumption operation even when the power to stabilize their operation is included;(4) benefiting from high sensitivity and low cost, Ge/Si avalanche photodiode is the most promising photodetector and can be used to effectively reduce the optical link power budget. These analyses and solutions will contribute to further lowering energy consumption to meet aggressive energy demands in future systems.展开更多
Mimicry of nature drives the development of bionic materials.Bionic superhydrophobic materials are a kind of high-efficiency materials to handle oil spills and water pollution.However,the stability of surface coatings...Mimicry of nature drives the development of bionic materials.Bionic superhydrophobic materials are a kind of high-efficiency materials to handle oil spills and water pollution.However,the stability of surface coatings of the superhydrophobic materials remains a challenge.Herein,a new category of self-assembly bionic superhydrophobic surface coating was prepared via one-step condensation/copolymerization of vinyltriethoxysilane(VTES)and divinylbenzene(DVB),which realized the close combination of covalent bonds between organic(e.g.DVB)and inorganic matter(e.g.VTES),and avoided the swelling of polydivinylbenzene(PDVB)in the process of collection of oil from water.This organic-inorganic hybrid polymer could self-assembly deposit on the surface of sponge even other substrates.For example,P(VTES-DVB)-Si0_(2)/MS obtained by assembling P(VTES-DVB)-Si0_(2)on the surface of Melamine Sponge(MS)exhibited superhydrophobicity with a Water Contact Angle(WCA)of 157.3,the optimal adsorption capacity of 77 g g 136 g g-1 for diverse oils,and an excellent separation efficiency of 99.3%.Besides,the excellent acid and alkali resistance of P(VTES-DVB)-Si0_(2)/MS suggested the potential value in practical oil-water separation.P(VTES-DVB)-Si0_(2)showed the outstanding hydrophobic performance by using as coating on different substrates.This work provided a new idea about the stable combination of organic and inorganic matter in the surface modification.展开更多
An on-chip, high extinction ratio transverse electric(TE)-pass polarizer using a silicon hybrid plasmonic grating is proposed and experimentally demonstrated. Utilizing plasmonics to manipulate the effective index and...An on-chip, high extinction ratio transverse electric(TE)-pass polarizer using a silicon hybrid plasmonic grating is proposed and experimentally demonstrated. Utilizing plasmonics to manipulate the effective index and mode distribution, the transverse magnetic mode is reflected and absorbed, while the TE mode passes through with relatively low propagation loss. For a 6-μm-long device, the measurement result shows that the extinction ratio in the wavelength range of 1.52 to 1.58 μm varies from 24 to 33.7 dB and the insertion loss is 2.8–4.9 dB. Moreover,the structure exhibits large alignment tolerance and is compatible with silicon-on-insulator fabrication technology.展开更多
We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward...We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a Vπ· L of 0.47 V · cm. Driven by a 2.5 Vpp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.展开更多
A novel athermal scheme utilizing resonance splitting of a dual-ring structure is proposed.Detailed design and simulation are presented,and a proof of concept structure is optimized to demonstrate an athermal resonato...A novel athermal scheme utilizing resonance splitting of a dual-ring structure is proposed.Detailed design and simulation are presented,and a proof of concept structure is optimized to demonstrate an athermal resonator with resonance wavelength variation lower than 5 pm∕K within 30 K temperature range.展开更多
Reduction of modulator energy consumption to 10 fJ∕bit is essential for the sustainable development of communication systems.Lumped modulators might be a viable solution if instructed by a complete theory system.Here...Reduction of modulator energy consumption to 10 fJ∕bit is essential for the sustainable development of communication systems.Lumped modulators might be a viable solution if instructed by a complete theory system.Here,we present a complete analytical electro-optic response theory,energy consumption analysis,and eye diagrams on absolute scales for lumped modulators.Consequently the speed limitation is understood and alleviated by single-drive configuration,and comprehensive knowledge into the energy dependence on structural parameters significantly reduces energy consumption.The results show that silicon modulation energy as low as 80.8 and 21.5 fJ∕bit can be achieved at 28 Gbd under 50 and 10 Ω impedance drivers,respectively.A 50 Gbd modulation is also shown to be possible.The analytical models can be extended to lumped modulators on other material platforms and offer a promising solution to the current challenges of modulation energy reduction.展开更多
CaMoO_(4):Eu^(3+)and CaMoO_(4):Eu^(3+),A+(A=Li,Na,K)phosphors for light-emitting diode(LED)applications have been prepared by microwave sintering method(MSM),and their structure and luminescence properties are investi...CaMoO_(4):Eu^(3+)and CaMoO_(4):Eu^(3+),A+(A=Li,Na,K)phosphors for light-emitting diode(LED)applications have been prepared by microwave sintering method(MSM),and their structure and luminescence properties are investigated.The influences of microwave reaction time and concentration of different kinds of charge compensation A+and Eu^(3+)on luminescence have also been discussed.The samples emit a red luminescence at 615 nm attributed to the^(5)D0→^(7)F2 transition of Eu^(3+)under 464 nm excitation.It is observed that adding charge compensation A+in the sample synthesis increases luminescence intensity.The optimized sample made with 32 mol%Li+and 32 mol%Eu^(3+)has an enhancement factor of 4 in photoluminescence compared to the sample made without charge compensation.The CIE(Commission Internationale de l'Eclairage)coordinates of Ca0.36MoO_(4):0.32Eu^(3+),0.32Li+are x=0.661 and y=0.339,which indicate that the obtained phosphor can be a promising red color candidate for white LED fabrications.展开更多
In this paper, a binary blazed grating-based polarization independent filter on silicon on insulator (SOI) under full conical incidence is presented. The properties of the grating filter are investigated by rigorous...In this paper, a binary blazed grating-based polarization independent filter on silicon on insulator (SOI) under full conical incidence is presented. The properties of the grating filter are investigated by rigorous coupled-wave analysis. It's shown that the filter demonstrates high reflectivity (R 〉 99%) at its resonant wavelength, which stays the same under three different polarization states. It indicates that this grating filter is polarization-independent. The final data shows its polarization-dependent loss (PDL) is only 0.04 dB and the full width at half maximums (FWHMs) of the transverse electric (TE-) and transverse magnetic (TM-) polarized light are 0.24 and 0.46nm, respectively.展开更多
A low-loss hybrid plasmonic transverse magnetic(TM)-pass polarizer has been demonstrated utilizing polarization-dependent mode conversion.Taking advantage of the silicon hybrid plasmonic slot waveguide(HPSW),the unwan...A low-loss hybrid plasmonic transverse magnetic(TM)-pass polarizer has been demonstrated utilizing polarization-dependent mode conversion.Taking advantage of the silicon hybrid plasmonic slot waveguide(HPSW),the unwanted transverse electric(TE)fundamental mode can be efficiently converted first to a TM higher-order mode and then suppressed by a power combiner,while the retained TM fundamental mode can pass through with negligible influence.Since the HPSW feature both strong structural asymmetry and a small interaction area in the cross-section between the metal and optical field,the optimized insertion loss of the device is as low as 0.4 d B.At the wavelength of 1550 nm,the extinction ratio is 28.3 d B with a moderate footprint of 2.38μm×10μm.For the entire C band,the average reflection of the TE mode is suppressed below-14 d B,and the extinction ratio is over 18.6 d B.This work provides another more efficient and effective approach for better on-chip polarizers.展开更多
Conventional electronic processors,which are the mainstream and almost invincible hardware for computation,are approaching their limits in both computational power and energy efficiency,especially in large-scale matri...Conventional electronic processors,which are the mainstream and almost invincible hardware for computation,are approaching their limits in both computational power and energy efficiency,especially in large-scale matrix computation.By combining electronic,photonic,and optoelectronic devices and circuits together,silicon-based optoelectronic matrix computation has been demonstrating great capabilities and feasibilities.Matrix computation is one of the few general-purpose computations that have the potential to exceed the computation performance of digital logic circuits in energy efficiency,computational power,and latency.Moreover,electronic processors also suffer from the tremendous energy consumption of the digital transceiver circuits during high-capacity data interconnections.We review the recent progress in photonic matrix computation,including matrix-vector multiplication,convolution,and multiply–accumulate operations in artificial neural networks,quantum information processing,combinatorial optimization,and compressed sensing,with particular attention paid to energy consumption.We also summarize the advantages of siliconbased optoelectronic matrix computation in data interconnections and photonic-electronic integration over conventional optical computing processors.Looking toward the future of silicon-based optoelectronic matrix computations,we believe that silicon-based optoelectronics is a promising and comprehensive platform for disruptively improving general-purpose matrix computation performance in the post-Moore’s law era.展开更多
In the past half century,silicon-based microelectronics and optical fiber communication have triggered a far-reaching information technology revolution,which has moved human society into a high-speed information age.T...In the past half century,silicon-based microelectronics and optical fiber communication have triggered a far-reaching information technology revolution,which has moved human society into a high-speed information age.The demand for communication capacity and speed is growing exponentially.On the other hand,data center and high-performance computing are facing bottlenecks of speed,bandwidth,and energy consumption of electrical interconnections.展开更多
This study uses a dipole embedded in A1203 layer to excite a symmetric surface plasmon polariton (SPP) mode in Au/A1203/Au waveguide to investigate its profile properties by using finite-difference time-domain (FDT...This study uses a dipole embedded in A1203 layer to excite a symmetric surface plasmon polariton (SPP) mode in Au/A1203/Au waveguide to investigate its profile properties by using finite-difference time-domain (FDTD) method. The excited dipole decay radiatively direct near-field coupling to SPP mode owing to thin A1203 layer of 100 nm. The effects of electric and magnetic field intensity profiles and decay length have been considered and characterized. It is found that dipole location is an important factor to influence the horizontal and vertical profile properties of symmetric SPP mode in Au/A1203/Au waveguide. The amplitudes of electric and magnetic field intensity and the wavelengths of metal-insulatormetal (MIM) SPP resonance mode can be tuned by varying dipole location. The horizontal and vertical decay lengths are 19 and 24 nm, respectively. It is expected that the Au/A1203/Au waveguide structure is very useful for the practical applications of designing a SPP source.展开更多
The tremendous demand on low cost optoelectronic systems that may be used for high-density data communications, real time sensing/detection and high-speed control/actuation has heated up the research and development i...The tremendous demand on low cost optoelectronic systems that may be used for high-density data communications, real time sensing/detection and high-speed control/actuation has heated up the research and development in silicon photonics, which studies the principles and technologies of merging electronics and photonics into the silicon platform. To make a silicon photonic system reality, the compatibility in device size and integration processing between the photonics and electronics is essential. Over the past years, unprecedented advancement on individual silicon photonic devices, such as waveguide, beam splitter, light source, modulator, and detector, have been reoorted, vet the Droaress in size and Drocessina issues are still under develoDment.展开更多
We propose for the first time,to the best of our knowledge,an on-chip integrated few-mode erbium–ytterbium co-doped waveguide amplifier based on an 800 nm thick Si_(3)N_(4)platform,which demonstrates high amplificati...We propose for the first time,to the best of our knowledge,an on-chip integrated few-mode erbium–ytterbium co-doped waveguide amplifier based on an 800 nm thick Si_(3)N_(4)platform,which demonstrates high amplification gains and low differential modal gains(DMGs)simultaneously.An eccentric waveguide structure and a co-propagating pumping scheme are adopted to balance the gain of each mode.A hybrid mode/polarization/wavelengthdivision(de)multiplexer with low insertion loss and crosstalk is used for multiplexing and demultiplexing in two operation wavebands centered at 1550 nm and 980 nm,where the light in these two bands serves as the signal light and pump light of the amplifier,respectively.The results demonstrate that with an input signal power of 0.1 mW,TE_(0)mode pump power of 300 mW,and TE_(1)mode pump power of 500 m W,the three signal modes(TE_(0)∕TM_(0)∕TE_(1))all exhibit amplification gains exceeding 30 dB,while maintaining a DMG of less than 0.1 dB.展开更多
基金This work was supported by the National Natural Science Foundation of China(No.21676127)Natural Science Foundation of Jiangsu Province(BK20170532)+4 种基金China Postdoctoral Science Foundation(2017M620194)Jiangsu Planned Projects for Postdoctoral Research Funds(1701023A)Natural Science Foundation Jiangsu Higher Education Institutions(17KJB430011)Postgraduate Research&Practice Innovation Program of Jiangsu Province(KYCX19_1592)Zhenjiang Natural Science Foundation of China(Grant Nos.SH2017046,SH2017055).
文摘Massive oily wastewater discharged from industrial production and human daily life have been an urgent environmental and ecological challenge.Superhydrophobic materials have attracted tremendous attention due to their unique properties and potential applications in the treatment of wastewater.In this study,a novel superhydrophobic/superoleophilic composite melamine sponge modified with dual silanized SiO_(2) microspheres was fabricated simply by a two-step sol-gel method using vinyltriethoxysilane and hexadecyltrimethoxysilane as functional agent,which exhibited a water contact angle of 153.2°and a water sliding contact angle of 4.8°.Furthermore,the composite sponge showed the excellent oil adsorption performance and the compressive elasticity reaching up to 130 g·g^(-1) of dichloromethane and 33.1 kPa of compressive stress.It was worth noting that the composite sponge presented the excellent separation efficiency(up to 99.5%)in the processes of continuous oil/water separation.The robust superhydrophobic composite melamine sponge provided the possibility with the practical application for oil-water separation.
基金funded by the Key Program of the National Natural Science Foundation of China(Grant No.62035001)the International Partnership Program of Chinese Academy of Sciences(No.18123KYSB20210013)the Shanghai Science and Technology Innovation Action Plan(No.22dz208700).
文摘In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally falling below−20.0 dB.To address this issue,we present a novel wavelength conversion device assisted by a waveguide amplifier,incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier,thereby achieving a notable conversion efficiency exceeding 0 dB.The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter,which enables an upsurge in conversion efficiency to−15.54 dB under 100 mW of pump power.Furthermore,the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB.Avoiding the use of external optical amplifiers,this device enables efficient and high-bandwidth wavelength conversion,showing promising applications in various fields,such as optical communication,sensing,imaging,and beyond.
基金This work was partially supported by the Major International Cooperation and Exchange Program of the National Natural Science Foundation of China under Grant 61120106012the Peking University 985 Startup Fund.
文摘Serving as the electrical to optical converter,the on-chip silicon light source is an indispensable component of silicon photonic technologies and has long been pursued.Here,we briefly review the history and recent progress of a few promising contenders for on-chip light sources in terms of operating wavelength,pump condition,power consumption,and fabrication process.Additionally,the performance of each contender is also assessed with respect to thermal stability,which is a crucial parameter to consider in complex optoelectronic integrated circuits(OEICs)and optical interconnections.Currently,III-V-based silicon(Si)lasers formed via bonding techniques demonstrate the best performance and display the best opportunity for commercial usage in the near future.However,in the long term,direct hetero-epitaxial growth of III–V materials on Si seems more promising for low-cost,high-yield fabrication.The demonstration of high-performance quantum dot(QD)lasers monolithically grown on Si strongly forecasts its feasibility and enormous potential for on-chip lasers.The superior temperature-insensitive characteristics of the QD laser promote this design in large-scale high-density OEICs.The Germanium(Ge)-on-Si laser is also competitive for large-scale monolithic integration in the future.Compared with a III-V-based Si laser,the biggest potential advantage of a Ge-on-Si laser lies in its material and processing compatibility with Si technology.Additionally,the versatility of Ge facilitates photon emission,modulation,and detection simultaneously with a simple process complexity and low cost.
基金supported by the Major International Cooperation and Exchange Program of the National Natural Science Foundation of China under Grant 61120106012
文摘We review current silicon photonic devices and their performance in connection with energy consumption.Four critical issues are identified to lower energy consumption in devices and systems: reducing the influence of the thermo-optic effect, increasing the wall-plug efficiency of lasers on silicon, optimizing energy performance of modulators, and enhancing the sensitivity of photodetectors. Major conclusions are(1) Mach–Zehnder interferometer-based devices can achieve athermal performance without any extra energy consumption while microrings do not have an efficient passive athermal solution;(2) while direct bonded III–V-based Si lasers can meet system power requirement for now, hetero-epitaxial grown III–V quantum dot lasers are competitive and may be a better option for the future;(3) resonant modulators, especially coupling modulators, are promising for low-energy consumption operation even when the power to stabilize their operation is included;(4) benefiting from high sensitivity and low cost, Ge/Si avalanche photodiode is the most promising photodetector and can be used to effectively reduce the optical link power budget. These analyses and solutions will contribute to further lowering energy consumption to meet aggressive energy demands in future systems.
基金This work was financially supported by the National Natural Science Foundation of China(Nos.22008092,21822807 and 51803080)Postgraduate Research&Practice Innovation Program of Jiangsu Prov ince(KYCX19_1592)Science and Technology Planning Social Development Project of Zhenjiang City(SH2020003).
文摘Mimicry of nature drives the development of bionic materials.Bionic superhydrophobic materials are a kind of high-efficiency materials to handle oil spills and water pollution.However,the stability of surface coatings of the superhydrophobic materials remains a challenge.Herein,a new category of self-assembly bionic superhydrophobic surface coating was prepared via one-step condensation/copolymerization of vinyltriethoxysilane(VTES)and divinylbenzene(DVB),which realized the close combination of covalent bonds between organic(e.g.DVB)and inorganic matter(e.g.VTES),and avoided the swelling of polydivinylbenzene(PDVB)in the process of collection of oil from water.This organic-inorganic hybrid polymer could self-assembly deposit on the surface of sponge even other substrates.For example,P(VTES-DVB)-Si0_(2)/MS obtained by assembling P(VTES-DVB)-Si0_(2)on the surface of Melamine Sponge(MS)exhibited superhydrophobicity with a Water Contact Angle(WCA)of 157.3,the optimal adsorption capacity of 77 g g 136 g g-1 for diverse oils,and an excellent separation efficiency of 99.3%.Besides,the excellent acid and alkali resistance of P(VTES-DVB)-Si0_(2)/MS suggested the potential value in practical oil-water separation.P(VTES-DVB)-Si0_(2)showed the outstanding hydrophobic performance by using as coating on different substrates.This work provided a new idea about the stable combination of organic and inorganic matter in the surface modification.
基金National Natural Science Foundation of China(NSFC)(61377049,61775005)Fundamental Research Project of Shenzhen Sci.&Tech.(JCYJ20170412153729436)
文摘An on-chip, high extinction ratio transverse electric(TE)-pass polarizer using a silicon hybrid plasmonic grating is proposed and experimentally demonstrated. Utilizing plasmonics to manipulate the effective index and mode distribution, the transverse magnetic mode is reflected and absorbed, while the TE mode passes through with relatively low propagation loss. For a 6-μm-long device, the measurement result shows that the extinction ratio in the wavelength range of 1.52 to 1.58 μm varies from 24 to 33.7 dB and the insertion loss is 2.8–4.9 dB. Moreover,the structure exhibits large alignment tolerance and is compatible with silicon-on-insulator fabrication technology.
基金Engineering and Physical Sciences Research Council(EPSRC)(EP/N00762X/1,EP/N013247/1,EP/R004951/1)Royal Academy of Engineering(RF201617/16/33)+6 种基金National Research Foundation Singapore(NRF)(NRFCRP12-2013-04)Royal Society(UF150325)European Project Cosmicc(H2020-ICT-27-2015-688516)China Scholarship Council(CSC)State Key Laboratory of Advanced Optical Communication Systems and Networks,ChinaEuropean Research Council under the European Union’s Seventh Framework Programme(FP7/2007-2013)H2020 European Research Council(ERC)(291216)
文摘We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a Vπ· L of 0.47 V · cm. Driven by a 2.5 Vpp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.
基金This work was partially supported by the Major International Cooperation and Exchange Program of the National Natural Science Foundation of China under Grant 61120106012partially by the National Natural Science Foundation of China under Grant 61205026.
文摘A novel athermal scheme utilizing resonance splitting of a dual-ring structure is proposed.Detailed design and simulation are presented,and a proof of concept structure is optimized to demonstrate an athermal resonator with resonance wavelength variation lower than 5 pm∕K within 30 K temperature range.
基金National Natural Science Foundation of China(NSFC)(61120106012)
文摘Reduction of modulator energy consumption to 10 fJ∕bit is essential for the sustainable development of communication systems.Lumped modulators might be a viable solution if instructed by a complete theory system.Here,we present a complete analytical electro-optic response theory,energy consumption analysis,and eye diagrams on absolute scales for lumped modulators.Consequently the speed limitation is understood and alleviated by single-drive configuration,and comprehensive knowledge into the energy dependence on structural parameters significantly reduces energy consumption.The results show that silicon modulation energy as low as 80.8 and 21.5 fJ∕bit can be achieved at 28 Gbd under 50 and 10 Ω impedance drivers,respectively.A 50 Gbd modulation is also shown to be possible.The analytical models can be extended to lumped modulators on other material platforms and offer a promising solution to the current challenges of modulation energy reduction.
基金supported by the National Natural Science Foundation of China(No.21271074)teamwork projects funded by Guangdong Natural Science Foundation(No.S2013030012842)CAS-Foshan Cooperation Funding Program(No.2012HY100685).
文摘CaMoO_(4):Eu^(3+)and CaMoO_(4):Eu^(3+),A+(A=Li,Na,K)phosphors for light-emitting diode(LED)applications have been prepared by microwave sintering method(MSM),and their structure and luminescence properties are investigated.The influences of microwave reaction time and concentration of different kinds of charge compensation A+and Eu^(3+)on luminescence have also been discussed.The samples emit a red luminescence at 615 nm attributed to the^(5)D0→^(7)F2 transition of Eu^(3+)under 464 nm excitation.It is observed that adding charge compensation A+in the sample synthesis increases luminescence intensity.The optimized sample made with 32 mol%Li+and 32 mol%Eu^(3+)has an enhancement factor of 4 in photoluminescence compared to the sample made without charge compensation.The CIE(Commission Internationale de l'Eclairage)coordinates of Ca0.36MoO_(4):0.32Eu^(3+),0.32Li+are x=0.661 and y=0.339,which indicate that the obtained phosphor can be a promising red color candidate for white LED fabrications.
基金Acknowledgements This work was partially supported by the National Natural Science Foundation of China (Grant No. 61177058), and the National High Technology Research and Development Program of China (No. 2011AA010302).
文摘In this paper, a binary blazed grating-based polarization independent filter on silicon on insulator (SOI) under full conical incidence is presented. The properties of the grating filter are investigated by rigorous coupled-wave analysis. It's shown that the filter demonstrates high reflectivity (R 〉 99%) at its resonant wavelength, which stays the same under three different polarization states. It indicates that this grating filter is polarization-independent. The final data shows its polarization-dependent loss (PDL) is only 0.04 dB and the full width at half maximums (FWHMs) of the transverse electric (TE-) and transverse magnetic (TM-) polarized light are 0.24 and 0.46nm, respectively.
基金National Natural Science Foundation of China(61775005)Fundamental Research Project of Shenzhen Sci.Tech.Fund(JCYJ20170412153729436)。
文摘A low-loss hybrid plasmonic transverse magnetic(TM)-pass polarizer has been demonstrated utilizing polarization-dependent mode conversion.Taking advantage of the silicon hybrid plasmonic slot waveguide(HPSW),the unwanted transverse electric(TE)fundamental mode can be efficiently converted first to a TM higher-order mode and then suppressed by a power combiner,while the retained TM fundamental mode can pass through with negligible influence.Since the HPSW feature both strong structural asymmetry and a small interaction area in the cross-section between the metal and optical field,the optimized insertion loss of the device is as low as 0.4 d B.At the wavelength of 1550 nm,the extinction ratio is 28.3 d B with a moderate footprint of 2.38μm×10μm.For the entire C band,the average reflection of the TE mode is suppressed below-14 d B,and the extinction ratio is over 18.6 d B.This work provides another more efficient and effective approach for better on-chip polarizers.
基金supported by the National Natural Science Foundation of China(62035001 and 61775005)。
文摘Conventional electronic processors,which are the mainstream and almost invincible hardware for computation,are approaching their limits in both computational power and energy efficiency,especially in large-scale matrix computation.By combining electronic,photonic,and optoelectronic devices and circuits together,silicon-based optoelectronic matrix computation has been demonstrating great capabilities and feasibilities.Matrix computation is one of the few general-purpose computations that have the potential to exceed the computation performance of digital logic circuits in energy efficiency,computational power,and latency.Moreover,electronic processors also suffer from the tremendous energy consumption of the digital transceiver circuits during high-capacity data interconnections.We review the recent progress in photonic matrix computation,including matrix-vector multiplication,convolution,and multiply–accumulate operations in artificial neural networks,quantum information processing,combinatorial optimization,and compressed sensing,with particular attention paid to energy consumption.We also summarize the advantages of siliconbased optoelectronic matrix computation in data interconnections and photonic-electronic integration over conventional optical computing processors.Looking toward the future of silicon-based optoelectronic matrix computations,we believe that silicon-based optoelectronics is a promising and comprehensive platform for disruptively improving general-purpose matrix computation performance in the post-Moore’s law era.
文摘In the past half century,silicon-based microelectronics and optical fiber communication have triggered a far-reaching information technology revolution,which has moved human society into a high-speed information age.The demand for communication capacity and speed is growing exponentially.On the other hand,data center and high-performance computing are facing bottlenecks of speed,bandwidth,and energy consumption of electrical interconnections.
基金Acknowledgements This work was supported by the National Natural Science Foundation of China (Grant Nos. 60907024 and 61036011), the New Teachers' Fund for the Doctoral Program of Higher Education (No. 20100001120024), Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry.
文摘This study uses a dipole embedded in A1203 layer to excite a symmetric surface plasmon polariton (SPP) mode in Au/A1203/Au waveguide to investigate its profile properties by using finite-difference time-domain (FDTD) method. The excited dipole decay radiatively direct near-field coupling to SPP mode owing to thin A1203 layer of 100 nm. The effects of electric and magnetic field intensity profiles and decay length have been considered and characterized. It is found that dipole location is an important factor to influence the horizontal and vertical profile properties of symmetric SPP mode in Au/A1203/Au waveguide. The amplitudes of electric and magnetic field intensity and the wavelengths of metal-insulatormetal (MIM) SPP resonance mode can be tuned by varying dipole location. The horizontal and vertical decay lengths are 19 and 24 nm, respectively. It is expected that the Au/A1203/Au waveguide structure is very useful for the practical applications of designing a SPP source.
文摘The tremendous demand on low cost optoelectronic systems that may be used for high-density data communications, real time sensing/detection and high-speed control/actuation has heated up the research and development in silicon photonics, which studies the principles and technologies of merging electronics and photonics into the silicon platform. To make a silicon photonic system reality, the compatibility in device size and integration processing between the photonics and electronics is essential. Over the past years, unprecedented advancement on individual silicon photonic devices, such as waveguide, beam splitter, light source, modulator, and detector, have been reoorted, vet the Droaress in size and Drocessina issues are still under develoDment.
基金Key Program of the National Natural Science Foundation of China(62035001)Shanghai Science and Technology Innovation Action Plan(22dz208700)International Partnership Program of Chinese Academy of Sciences(18123KYSB20210013)。
文摘We propose for the first time,to the best of our knowledge,an on-chip integrated few-mode erbium–ytterbium co-doped waveguide amplifier based on an 800 nm thick Si_(3)N_(4)platform,which demonstrates high amplification gains and low differential modal gains(DMGs)simultaneously.An eccentric waveguide structure and a co-propagating pumping scheme are adopted to balance the gain of each mode.A hybrid mode/polarization/wavelengthdivision(de)multiplexer with low insertion loss and crosstalk is used for multiplexing and demultiplexing in two operation wavebands centered at 1550 nm and 980 nm,where the light in these two bands serves as the signal light and pump light of the amplifier,respectively.The results demonstrate that with an input signal power of 0.1 mW,TE_(0)mode pump power of 300 mW,and TE_(1)mode pump power of 500 m W,the three signal modes(TE_(0)∕TM_(0)∕TE_(1))all exhibit amplification gains exceeding 30 dB,while maintaining a DMG of less than 0.1 dB.