Discussion on the Application of Industry-Finance Integration in Warehousing Enterprises

In recent years,the transformation of warehousing enterprises has garnered widespread attention.The integration of industry and finance in management accounting can provide financial management support for the transformation of warehousing enterprises,deliver accurate and effective financial and business information,facilitate managers’decision-making,and achieve the benign development of enterprises.This paper discusses the problems in the application of industry-finance integration in warehousing enterprises,including the low degree of informatization,inefficient internal cost control,and mismatched staff quality,and then proposes corresponding measures,such as establishing and improving information systems,establishing a comprehensive budget management system,and establishing management measures for the integration of industry and finance in warehousing enterprises,so as to strengthen the application of industry-finance integration in warehousing enterprises.

Development of the triazole-fused pyrimidine derivatives as highly potent and reversible inhibitors of histone lysine specific demethylase1(LSD1/KDM1A)

Histone lysine specific demethylase 1(LSD1) has been recognized as an important modulator in post-translational process in epigenetics. Dysregulation of LSD1 has been implicated in the development of various cancers. Herein, we report the discovery of the hit compound 8 a(IC50=3.93 μmol/L) and further medicinal chemistry efforts, leading to the generation of compound 15 u(IC50=49 nmol/L, and Ki= 16 nmol/L), which inhibited LSD1 reversibly and competitively with H3 K4 me2, and was selective to LSD1 over MAO-A/B. Docking studies were performed to rationalize the potency ofcompound 15 u. Compound 15 u also showed strong antiproliferative activity against four leukemia cell lines(OCL-AML3, K562, THP-1 and U937) as well as the lymphoma cell line Raji with the IC50 values of 1.79, 1.30, 0.45, 1.22 and 1.40 μmol/L, respectively. In THP-1 cell line, 15 u significantly inhibited colony formation and caused remarkable morphological changes. Compound 15 u induced expression of CD86 and CD11 b in THP-1 cells, confirming its cellular activity and ability of inducing differentiation.The findings further indicate that targeting LSD1 is a promising strategy for AML treatment, the triazolefused pyrimidine derivatives are new scaffolds for the development of LSD1/KDM1 A inhibitors.

Thermal property evaluation of a 2.5D integration method with device level microchannel direct cooling for a high-power GaN HEMT device

Gallium nitride high electron mobility transistor(GaN HEMT)devices have become critical components in the manufacturing of high-performance radio frequency(RF)or power electronic modules due to their superior characteristics,such as high electron saturation speeds and high power densities.However,the high heat characteristics of GaN HEMTs make device level cooling a critical problem to solve since performance degradation or even failure may occur under high temperatures.In this paper,we proposed a 2.5D integration method with devicelevel microchannel direct cooling for a high-power GaN HEMT device.To demonstrate this technological concept,a multigate GaN HEMT device featuring a gate length/width/source drain spacing of 0.5μm/300μm/6μm that underwent in-house backside thinning and metallization was used as the test vehicle.A high-resistivity silicon(HR Si)interposer embedded with four-layer microchannels was designed,having widths/pitches of 30μm/30μm at the top microchannel.The high-power GaN HEMT device was soldered on a Si interposer embedded with open microchannels for heat dissipation.A pair of GSG Pad chips was soldered simultaneously to display the capacity for the heterogeneous integration of other chip types.Thermal property evaluation was conducted with experiments and simulations.The test results showed that the maximum surface temperature of the GaN HEMT device decreased to 93.8°C when it experienced a heat dissipation density of 32 kW/cm^(2) in the gate finger area and an average heat dissipation density of 5 kW/cm^(2) was found in the active area with the DI water coolant at a flow rate of 3 mL/min.To our knowledge,among recently reported works,this finding was the best cooling capacity of heterogeneously integrated microchannels for GaN HEMT devices.In addition,this technology was scalable regarding the numbers of gate fingers or GaN HEMT devices.