University autonomy and government intervention are a pair of basic contradictions in the external relationship of higher education.Strategies of the Coordinated Development of University Autonomy and Government Inter...University autonomy and government intervention are a pair of basic contradictions in the external relationship of higher education.Strategies of the Coordinated Development of University Autonomy and Government Intervention as follow:balance autonomy and intervention under the premise of public justice;establish a multi-centric co-governance with mutual restriction to realize good governance;modernize the governance capacity of universities with the rule of law as the core;build trust mechanism based on social choice by combining self-discipline with heteronomy.Only in this way,can we coordinate the development of university autonomy and government intervention.展开更多
The electromagnetic vibration noise in axial flux motors was meticulously examined.In this study,24-slot/10-pole and 12-slot/10-pole axial flux motors were chosen as the subjects of research.The spatial characteristic...The electromagnetic vibration noise in axial flux motors was meticulously examined.In this study,24-slot/10-pole and 12-slot/10-pole axial flux motors were chosen as the subjects of research.The spatial characteristics of the axial electromagnetic force were derived analytically and confirmed via two-dimensional Fourier decomposition.The finite-element method was used to simulate the low-order axial modes of both motors.Furthermore,a modal experiment on the stator of a 24-slot/10-pole axial flux motor was conducted to validate the simulation’s accuracy.By integrating the electromagnetic and structural models,a comprehensive multi-physical field model was developed to calculate the vibration noise of the axial flux motor.The precision of this model was subsequently corroborated with noise experiments.The findings from this study aim to offer insights into identifying the sources of vibration noise in axial flux motors.展开更多
In order to solve the problems of GaN heteroepitaxy on sapphire substrate,some techniques were explored.Freestanding GaN substrates have been made by hydride vapor phase epitaxy(HVPE),laser lift-off(LLO),and chemical ...In order to solve the problems of GaN heteroepitaxy on sapphire substrate,some techniques were explored.Freestanding GaN substrates have been made by hydride vapor phase epitaxy(HVPE),laser lift-off(LLO),and chemical mechanical polishing techniques.Wafer bending and cracking in the HVPE growth were partly settled by pulsed flow modulation method.High-crystal quality was established for 1.2 mm thick GaN substrate by X-ray diffraction measurement,in which the full width of half maximum values were 72,110 arcsec for(102),(002)peaks.A novel micro-size patterned sapphire substrate(PSS)and a nano PSS were also fabricated.High-power vertical structure light emitting diodes(VSLEDs)have been developed by Au–Sn eutectic wafer bonding,homemade micro-area LLO,and light extraction structure preparation.The high-injection-level active region with low temperature GaN sandwiched layers was used for lowefficiency droop.The light output power of VSLED was achieved as 400 mW driven at 350 mA,and the dominant wavelength is about 460 nm.The structures and properties of strain modulated superlattices(SLs)and quantum wells as well as advanced simulation of carriers transport across the electron blocking layer were investigated in laser diodes.The hole concentration was achieved as high as1.6 9 1018cm-3in AlGaN/GaN SLs:Mg by inserting an AlN layer.High-quality AlGaN epilayers and structures were grown by MOCVD.Some device structures of UV LEDs and detectors were demonstrated.The emission wavelength of 262 nm UV LED has been successfully fabricated.At last,high-quality InN and InGaN materials for solar cell were grown by boundary-temperature-controlled epitaxy and growth-temperature-controlled epitaxy.Hall-effect measurement showed a recorded electron mobility of 3,280 cm2/(V s)and a residual electron concentration of 1.47 9 1017cm-3at 300 K.展开更多
Multiple hormones, including abscisic acid(ABA) and auxin, regulate cell division and differentiation of Arabidopsis root meristems. AUXIN RESPONSE FACTOR2(ARF2) functions as a negative regulator of ABA responses,...Multiple hormones, including abscisic acid(ABA) and auxin, regulate cell division and differentiation of Arabidopsis root meristems. AUXIN RESPONSE FACTOR2(ARF2) functions as a negative regulator of ABA responses, as seed germination and primary root growth of arf2 mutants are hypersensitive to ABA. In this study, we found that ABA treatment reduced the expression levels of the PIN-FORMEDs(PIN) auxin efflux carriers, PIN1, PIN3,PIN4, and PIN7, to a greater extent in the root meristems of arf2-101 mutant than in the wild type. Also, arf2-101 pin1 and arf2-101 pin4 double mutants show less ABA-induced inhibition of root meristem activity than the arf2-101 mutants. Furthermore, ARF2 positively mediates the transcripts of transcription factor PLETHORA 1(PLT1)gene but negatively mediates PLT2 at protein level in root meristems. Using a dexamethasone(DEX)-inducible transgenic line, Pro35S:PLT2-GR, we showed that PLT2 greatly promotes cell division and completely inhibits cell differentiation in root meristems of the arf2-101 mutant once PLT2 is induced by DEX, which can be partially reversed by ABA treatment, suggesting that ABA regulates root meristem activity in both ARF2-dependent and independent pathways. Our results uncover a complex regulatory architecture in which ARF2 coordinates with PLTs and PINs to orchestrate ABA-mediated regulation of root meristem activity in Arabidopsis.展开更多
基金Project of key Research Base of Humanities and Social Sciences in colleges and Universities of Jiangxi Province in 2017“Transformation from‘Teaching’to‘Learning’--Research on Teacher Education Reform under the New Paradigm of Undergraduate Education”(JD17075)Project of"2011 Collaborative Innovation Center"of Jiangxi Provincial Teacher Quality Monitoring,Evaluation and Service in Jiangxi Province(JXJSZLB13).
文摘University autonomy and government intervention are a pair of basic contradictions in the external relationship of higher education.Strategies of the Coordinated Development of University Autonomy and Government Intervention as follow:balance autonomy and intervention under the premise of public justice;establish a multi-centric co-governance with mutual restriction to realize good governance;modernize the governance capacity of universities with the rule of law as the core;build trust mechanism based on social choice by combining self-discipline with heteronomy.Only in this way,can we coordinate the development of university autonomy and government intervention.
基金Supported by the Key Project of the China National Natural Science Foundation under Projects 51637001Open Fund for National Engineering Laboratory of Energy-Saving Motor&Control Technology,Anhui University(KFKT202101)Scientific Research Project Supported by Education Department of Anhui Province(KJ2021A0014).
文摘The electromagnetic vibration noise in axial flux motors was meticulously examined.In this study,24-slot/10-pole and 12-slot/10-pole axial flux motors were chosen as the subjects of research.The spatial characteristics of the axial electromagnetic force were derived analytically and confirmed via two-dimensional Fourier decomposition.The finite-element method was used to simulate the low-order axial modes of both motors.Furthermore,a modal experiment on the stator of a 24-slot/10-pole axial flux motor was conducted to validate the simulation’s accuracy.By integrating the electromagnetic and structural models,a comprehensive multi-physical field model was developed to calculate the vibration noise of the axial flux motor.The precision of this model was subsequently corroborated with noise experiments.The findings from this study aim to offer insights into identifying the sources of vibration noise in axial flux motors.
基金supported by the National Key Basic R&D Project of China(TG2011CB301900 and TG2012CB619304)the project of National High Technology of China(2011AA03A103)+1 种基金the National Natural Science Foundation of China(61076012 and60876063)the Beijing Municipal Science & Technology Commission(D111100001711002)
文摘In order to solve the problems of GaN heteroepitaxy on sapphire substrate,some techniques were explored.Freestanding GaN substrates have been made by hydride vapor phase epitaxy(HVPE),laser lift-off(LLO),and chemical mechanical polishing techniques.Wafer bending and cracking in the HVPE growth were partly settled by pulsed flow modulation method.High-crystal quality was established for 1.2 mm thick GaN substrate by X-ray diffraction measurement,in which the full width of half maximum values were 72,110 arcsec for(102),(002)peaks.A novel micro-size patterned sapphire substrate(PSS)and a nano PSS were also fabricated.High-power vertical structure light emitting diodes(VSLEDs)have been developed by Au–Sn eutectic wafer bonding,homemade micro-area LLO,and light extraction structure preparation.The high-injection-level active region with low temperature GaN sandwiched layers was used for lowefficiency droop.The light output power of VSLED was achieved as 400 mW driven at 350 mA,and the dominant wavelength is about 460 nm.The structures and properties of strain modulated superlattices(SLs)and quantum wells as well as advanced simulation of carriers transport across the electron blocking layer were investigated in laser diodes.The hole concentration was achieved as high as1.6 9 1018cm-3in AlGaN/GaN SLs:Mg by inserting an AlN layer.High-quality AlGaN epilayers and structures were grown by MOCVD.Some device structures of UV LEDs and detectors were demonstrated.The emission wavelength of 262 nm UV LED has been successfully fabricated.At last,high-quality InN and InGaN materials for solar cell were grown by boundary-temperature-controlled epitaxy and growth-temperature-controlled epitaxy.Hall-effect measurement showed a recorded electron mobility of 3,280 cm2/(V s)and a residual electron concentration of 1.47 9 1017cm-3at 300 K.
基金supported by grants from National Basic Research Program of China(973 program,2012CB114300)National Science Foundation of China(31421062)to Z.G
文摘Multiple hormones, including abscisic acid(ABA) and auxin, regulate cell division and differentiation of Arabidopsis root meristems. AUXIN RESPONSE FACTOR2(ARF2) functions as a negative regulator of ABA responses, as seed germination and primary root growth of arf2 mutants are hypersensitive to ABA. In this study, we found that ABA treatment reduced the expression levels of the PIN-FORMEDs(PIN) auxin efflux carriers, PIN1, PIN3,PIN4, and PIN7, to a greater extent in the root meristems of arf2-101 mutant than in the wild type. Also, arf2-101 pin1 and arf2-101 pin4 double mutants show less ABA-induced inhibition of root meristem activity than the arf2-101 mutants. Furthermore, ARF2 positively mediates the transcripts of transcription factor PLETHORA 1(PLT1)gene but negatively mediates PLT2 at protein level in root meristems. Using a dexamethasone(DEX)-inducible transgenic line, Pro35S:PLT2-GR, we showed that PLT2 greatly promotes cell division and completely inhibits cell differentiation in root meristems of the arf2-101 mutant once PLT2 is induced by DEX, which can be partially reversed by ABA treatment, suggesting that ABA regulates root meristem activity in both ARF2-dependent and independent pathways. Our results uncover a complex regulatory architecture in which ARF2 coordinates with PLTs and PINs to orchestrate ABA-mediated regulation of root meristem activity in Arabidopsis.