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Superconductivity of bilayer titanium/indium thin film grown on SiO2/Si(001)
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作者 Zhao-Hong Mo Chao Lu +14 位作者 Yi Liu Wei Feng Yun Zhang Wen Zhang Shi-Yong Tan Hong-Jun Zhang Chun-Yu Guo Xiao-Dong Wang Liang Wang Rui-Zhu Yang zhong-guo ren Xie-Gang Zhu Zhong-Hua Xiong Qi An Xin-Chun Lai 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第6期429-433,共5页
Bilayer superconducting films with tunable transition temperature(Tc) are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, ... Bilayer superconducting films with tunable transition temperature(Tc) are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, and Ti/Al systems. Here in this work, titanium/indium(Ti/In) bilayer superconducting films are successfully fabricated on SiO2/Si(001)substrates by molecular beam epitaxy(MBE). The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to-150?C during indium evaporation. We measure the critical temperature under a bias current of 10 μA, and obtain different superconducting transition temperatures ranging from 645 m K to 2.7 K by adjusting the thickness ratio of Ti/In. Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases. 展开更多
关键词 titanium/indium thin film molecular beam epitaxy (MBE) proximity effect
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