耦合蝶形天线的石墨烯室温太赫兹探测器

高灵敏度、可室温下工作的太赫兹(THz)探测器是太赫兹在生物技术、量子传输、通信、成像等领域得以应用的关键。本文报道了一种石墨烯太赫兹探测器设计方法,该探测器通过将蝶形天线与石墨烯pn结构建至一个器件中,利用蝶形金属天线将波长为110 mm(2.7 THz)的太赫兹远场光汇聚至约800 nm的石墨烯THz吸收层,同时将这蝶形天线的两极设计为两个独立栅极,将800 nm的吸收层转变为可分离光电子的pn结区,通过增强局域光场增加太赫兹吸收,并同时增强光电子分离效率,将正交极化方向的消光比提升了1到2个数量级,在室温下实现了较低的噪声等效功率(NEP)~1 nW·Hz^(−1/2)。这一设计为太赫兹探测提供了新的技术路径。

Direct insight into sulfiphilicity-lithiophilicity design of bifunctional heteroatom-doped graphene mediator toward durable Li-S batteries

The practical applications of lithium-sulfur(Li-S)battery have been greatly hindered by the severe polysulfide shuttle at the cathode and rampant lithium dendrite growth at the anode.One of the effective solutions deals with concurrent management of both electrodes.Nevertheless,this direction remains in a nascent stage due to a lack of material selection and mechanism exploration.Herein,we devise a temperature-mediated direct chemical vapor deposition strategy to realize the controllable synthesis of three-dimensional boron/nitrogen dual-doped graphene(BNG)particulated architectures,which is employed as a light-weighted and multi-functional mediator for both electrodes in Li-S batteries.Benefiting from the“sulfiphilic”and“lithiophilic”features,the BNG modified separator not only enables boosted kinetics of polysulfide transformation to mitigate the shuttle effect but also endows uniform lithium deposition to suppress the dendritic growth.Theoretical calculations in combination with electro-kinetic tests and operando Raman analysis further elucidate the favorable sulfur and lithium electrochemistry of BNG at a molecular level.This work offers direct insight into the mediator design via controllable synthesis of graphene materials to tackle the fundamental challenges of Li-S batteries.

Coulomb-dominated oscillations in a graphene quantum Hall Fabry–Pérot interferometer

The electronic Fabry–Pérot interferometer operating in the quantum Hall regime may be a promising tool for probing edge state interferences and studying the non-Abelian statistics of fractionally charged quasiparticles. Here we report on realizing a quantum Hall Fabry–Pérot interferometer based on monolayer graphene. We observe resistance oscillations as a function of perpendicular magnetic field and gate voltage both on the electron and hole sides. Their Coulomb-dominated origin is revealed by the positive(negative) slope of the constant phase lines in the plane of magnetic field and gate voltage on the electron(hole) side. Our work demonstrates that the graphene interferometer is feasible and paves the way for the studies of edge state interferences since high-Landau-level and even denominator fractional quantum Hall states have been found in graphene.

Substrate screening for superclean graphene growth using firstprinciples calculations

Suppressing the formation of amorphous surface carbon and contaminants during the preparation of graphene by chemical vapor deposition remains an ongoing issue.Herein,we analyzed how substrate characteristics affect graphene quality by simulating margin extension,the nucleation process,and defect pegging configurations on mono-crystalline oriented metal substrates with the aim of enhancing graphene cleanliness.Defect formation energy and nucleation potential,which are indirect substrate–graphene interaction features,were found to appropriately evaluate graphene quality.The crystallographic orientation of the metal substrate was discovered to be critical for producing superclean graphene.A low graphene defect density and high nucleation rate on the Cu(100)facet guarantee growth of high-quality graphene,especially in terms of suppressing the formation of amorphous carbon.In addition,rapid kink growth and self-healing on the Cu(100)facet facilitate rapid graphene synthesis,which is also promoted by rapid kink splicing and margin self-repair on this facet.This study provides theoretical insight useful for the synthesis of superclean graphene.

Transfer-free chemical vapor deposition graphene for nitride epitaxy: challenges, current status and future outlook

Graphene, a two-dimensional material with outstanding electrical and mechanical properties, has attracted considerable attention in the field of semiconductor technologies due to its potential use as a buffer layer for the epitaxial Ⅲ-nitride growth. In recent years, significant progress has been made in the chemical vapor deposition growth of graphene on various insulating substrates for the nitride epitaxy, which offers a facile, inexpensive, and easily scalable methodology. However, certain challenges are still present in the form of producing high-quality graphene and achieving optimal interface compatibility with Ⅲ-nitride materials.In this review, we provide an overview of the bottlenecks associated with the transferred graphene fabrication techniques and the state-of-the-art techniques for the transfer-free graphene growth. The present contribution highlights the current progress in the transfer-free graphene growth on different insulating substrates, including sapphire, quartz, SiO_(2)/Si, and discusses the potential applications of transfer-free graphene in the Ⅲ-nitride epitaxy. Finally, it includes the prospects of the transfer-free graphene growth for the Ⅲ-nitride epitaxy and the challenges that should be overcome to realize its full potential in this field.

Theoretical investigations on the growth of graphene by oxygenassisted chemical vapor deposition

Recently,graphene has drawn considerable attention in the field of electronics,owing to its favorable conductivity and high carrier mobility.Crucial to the industrialization of graphene is its high-quality microfabrication via chemical vapor deposition.However,many problems remain in its preparation,such as the not fully understood cracking mechanism of the carbon source,the mechanism of its substrate oxidation,and insufficient defect repair theory.To help close this capability gap,this study leverages density functional theory to explore the role of O in graphene growth.The effects of Cu substrate oxidation on carbon source cracking,nucleation barriers,crystal nucleus growth,and defect repairs are discussed.OCu was found to reduce energy change during dehydrogenation,rendering the process easier.Moreover,the adsorbed O in graphene or its Cu substrate can promote defect repair and edge growth.

Invisible vapor catalysis in graphene growth by chemical vapor deposition

Vapor catalysis was recently found to play a crucial role in superclean graphene growth via chemical vapor decomposition(CVD).However,knowledge of vapor-phase catalysis is scarce,and several fundamental issues,including vapor compositions and their impact on graphene growth,are ambiguous.Here,by combining density functional theory(DFT)calculations,an ideal gas model,and a designed experiment,we found that the vapor was mainly composed of Cui clusters with tens of atoms.The vapor pressure was estimated to be~10^(-12)-10^(-1)1 bar under normal low-pressure CVD system(LPCVD)conditions for graphene growth,and the exposed surface area of Cui clusters in the vapor was 22-269 times that of the Cu substrate surface,highlighting the importance of vapor catalysis.DFT calculations show Cu clusters,represented by Cu17,have strong capabilities for adsorption,dehydrogenation,and decomposition of hydrocarbons.They exhibit an adsorption lifetime and reaction flux six orders of magnitude higher than those on the Cu surface,thus providing a sufficient supply of active C atoms for rapid graphene growth and improving the surface cleanliness of the synthesized graphene.Further experimental validation showed that increasing the amount of Cu vapor improved the as-synthesized graphene growth rate and surface cleanliness.This study provides a comprehensive understanding of vapor catalysis and the fundamental basis of vapor control for superclean graphene rapid growth.

CO_(2)-promoted transfer-free growth of conformal graphene

Gaseous promotors have readily been adopted during the direct synthesis of graphene over insulators to enhance the growth quality and/or boost the growth rate.The understanding of the real functions of carbon-containing promotors has still remained elusive.In this study,we identify the critical roles of a representative CO_(2)promotor played in the direct growth of graphene.The comparative experimental trials validate CO_(2)as an effective modulator to decrease graphene nucleation density,improve growth kinetics,mitigate adlayer formation.The first-principles calculations illustrate that the generation of gas-phase OH species in CO_(2)-assisted system helps decrease the energy barriers of CH4 decomposition and carbon attachment to the growth front,which might be the key factor to allow high-quality direct growth.Such a CO_(2)-promoted strategy enables the conformal coating of graphene film over curved insulators,where the sheet resistance of grown graphene on quartz reaches as low as 1.26 kΩ·sq^(−1)at an optical transmittance of~95.8%.The fabricated endoscope lens based on our conformal graphene harvests an apoptosis of 82.8%for noninvasive thermal therapy.The work presented here is expected to motivate further investigations in the controllable growth of high-quality graphene on insulating substrates.

Ultrafast growth of wafer-scale fold-free bilayer graphene

Bilayer graphene provides a versatile platform for exploring a variety of intriguing phenomena and shows much promise for applications in electronics,optoelectronics,etc.Controlled growth of large-area bilayer graphene is therefore highly desired yet still suffers from a slow growth rate and poor layer uniformity.Meanwhile,graphene wrinkles,including folds and ripples,form during cooling due to the thermal contraction mismatch between graphene and the metal substrates,and have been far from suppressed or eliminated,especially in bilayer graphene,which would greatly degrade the extraordinary properties of graphene.Here we report the ultrafast growth of wafer-scale fold-free bilayer graphene by chemical vapor deposition.Through well-tuning the alloy thickness and strain regulation of the single-crystal CuNi(111)/sapphire,the full coverage of a 2-inch fold-free bilayer graphene wafer via mainly isothermal segregation has been achieved as fast as 30 s.The tensile-strained CuNi(111)film reduces the thermal contraction mismatch and suppresses the formation of graphene folds during cooling,which is directly observed through in situ optical microscopy.The ultraflat bilayer graphene exhibits wafer-scale uniformity in electrical performance and enhanced mechanical property comparable to the exfoliated ones.Our results offer a promising route for largescale production of bilayer graphene and enable its various applications.

Fast scanning growth of high-quality graphene films on Cu foils fueled by dimeric carbon precursor

Carbon source precursor is a critical factor governing chemical vapor deposition growth of graphene films.Methane(CH4),has been the most commonly used precursor in the last decade,but it presents challenges in terms of decomposition efficiency and growth rate.Here we thoroughly evaluated acetylene(C2H_(2)),a precursor that is probably for providing carbon dimer(C2)species,for fast growth of large-scale graphene films.We find that the graphene growth behaviors fueled by C2H_(2) exhibit unconventional localized growth behavior with significant advantages in terms of high growth rate,which mainly ascribe to the as-decomposed C2 species.Therefore,a C2-fueled scanning growth strategy is proposed,and the fast scanning growth rate of 40 cm/min was experimentally demonstrated.This growth strategy is compatible with the approach of unidirectional growth of single-crystal graphene films,and the as-grown graphene films are of high-quality.This work demonstrates a reliable and promising strategy for the rapid synthesis of high-quality graphene film and may pave the avenue to cost-effective mass production of graphene materials in the roll-to-roll system.

Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review

Heteroepitaxy can reduce the cost and widen the application range of semiconductor film synthesis and device fabrication.However,the lattice and thermal expansion coefficient mismatches between epilayers and substrates limit the improvement of crystal quality and device performance.Two-dimensional(2D)material-assisted heteroepitaxy offers an effective solution to these challenges.The weak interaction at the interface between films and substrates facilitates the subsequent exfoliation and transfer of epilayer for the fabrication of flexible or high-power electronics.Herein,we summarize the modes of 2D material-assisted epitaxy,which can be classified into remote epitaxy,pinhole epitaxy and van der Waals epitaxy based on the interfacial interaction between the epilayers and substrates.Furthermore,we discuss in detail the improved crystal quality and functional applications,such as flexible devices,wavelength-modulated optoelectronic devices,and thermal management in high-power devices.Moreover,we highlight the challenges and prospects of 2D material-assisted epitaxy,providing roadmaps for lateral research and semiconductor production.

Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

A foundation of the modern technology that uses single-crystal silicon has been the growth of highquality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality(ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 min, of a graphene film of(5 ×50) cm^2 dimension with >99% ultra-highly oriented grains.This growth was achieved by:(1) synthesis of metre-sized single-crystal Cu(1 1 1) foil as substrate;(2)epitaxial growth of graphene islands on the Cu(1 1 1) surface;(3) seamless merging of such graphene islands into a graphene film with high single crystallinity and(4) the ultrafast growth of graphene film.These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(1 1 1) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains(if any), has a mobility up to ~23,000 cm^2 V^(-1)s^(-1)at 4 K and room temperature sheet resistance of ~230 Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.

Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation

有一致厚度的大域的六角形的硼氮化物(h-BN ) 的化学蒸汽免职(CVD ) 合成是很挑战性的，主要由于这材料的极其高的成核密度。此处，我们报导晶片规模的成功的生长，有大单人赛水晶的领域尺寸的高质量的 h-BN 单层电影，吗直到~ 72 ??????????????????????????慮潮档湡敮獬???????慮潮畴敢??洠獥灯牯????  ？？

Direct low-temperature synthesis of graphene on various glasses by plasma-enhanced chemical vapor deposition for versatile, cost-effective electrodes

在低温度的各种各样的玻璃底层上的 graphene 的没有催化剂、可伸缩的合成具有到象便宜透明电子学和最先进的显示器那样的众多的应用程序的首要的意义。然而，在这个有希望的研究领域以内的系统的学习远这样仍然保持少见。此处，我们用一个低温度的提高血浆的化学蒸汽免职方法在各种各样的眼镜上报导 graphene 的直接生长。如此的一条灵巧、可伸缩的途径在 400600 的一个生长温度范围在各种各样的玻璃底层上保证一致、没有转移的 graphene

High-Quality Single-Layer Graphene via Reparative Reduction of Graphene Oxide

graphene 氧化物的减小(去) 是体积 graphene 的一条有希望的便宜合成途径，它把一条可存取的线路提供给透明进行电影和灵活电子学。不幸地，包含氧的功能的组的版本不可避免地留下空缺和拓扑的缺点在上减少去表，和它的低电的传导性妨碍实际应用程序的开发。这里，我们在场为与碳激进分子一起的新生的空缺的即时修理的策略由一位合适的先锋的热分解生产了。这样获得的单个层的 graphene 的表传导性被提起对 350410 S/cm 非常六倍(虽然保留 >96% 透明性) 。X 光检查光电子光谱学(XPS ) 和拉曼光谱学表明传导性改进能被归因于另外的 sp2-C 结构的形成。这个方法为获得高度传导性的透明 graphene 电影提供一个简单、有效的过程。

Controlled synthesis of single-crystal SnSe nanoplates

二维的分层的 IVVI chalcogenides 在下一代的 optoelectronic 为应用正在吸引大兴趣，光电、热电的设备。然而，在高质量的 IVVI chalcogenide nanostructures 的可控制的合成的大挑战迄今为止妨碍了他们的深入的研究和实际应用。第一次，这里，我们由蒸汽运输免职在云母底层上以一种控制方式报导单个水晶的 IVVI SnSe nanoplates 的可行合成。成长得当的 SnSe nanoplates 有近似方形的形状，可控制的方面长度从 1 ～ 6 m 变化。电的运输和 optoelectronic 大小证明同样获得的 SnSe nanoplates 显示 p 类型电导率和高 photoresponsivity。

Confining MOF-derived SnSe nanoplatelets in nitrogen-doped graphene cages via direct CVD for durable sodium ion storage

Tin-based compounds are deemed as suitable anode candidates affording promising sodium-ion storages for rechargeable batteries andhybrid capacitors.However,synergistically tailoring the electrical conductivity and structural stability of tin-based anodes to attain durablesodium-ion storages remains challenging to date for its practical applications.Herein,metal-organic framework(MOF)derived SnSe/C wrappedwithin nitrogen-doped graphene(NG@SnSe/C)is designed targeting durable sodium-ion storage.NG@SnSe/C possesses favorable electricalconductivity and structure stability due to the"inner"carbon framework from the MOF thermal treatment and"outer"graphitic cage from thedirect chemical vapor deposition synthesis.Consequently,NG@SnSe/C electrode can obtain a high reversible capacity of 650 mAh·g^-1 at 0.05 A·g^1,a favorable rate performance of 287.8 mAh·g^1 at 5 A·g^1 and a superior cycle stability with a negligible capacity decay of 0.016%percycle over 3,200 cycles at 0.4 A·g^1.Theoretical calculations reveal that the nitrogen-doping in graphene can stabilize the NG@SnSe/Cstructure and improve the electrical conductivity.The reversible Na-ion storage mechanism of SnSe is further investigated by in-situ X-raydiffraction/ex-s/tu transmission electron microscopy.Furthermore,assembled sodium-ion hybrid capacitor full-cells comprising our NG@SnSe/Canode and an active carbon cathode harvest a high energy/power density of 115.5 Wh·kg^-1/5,742 W·kg^-1,holding promise for next-generationen ergy storages.

Chemical vapor deposition of monolayer WS2 nano- sheets on Au foils toward direct application in hydrogen evolution

Monolayer tungsten disulfide （WS2）, a typical member of the semiconducting transition metal dichalcogenide family has drawn considerable interest because of its unique properties. Intriguingly the edge of WS2 exhibits an ideal hydrogen binding energy which makes WS2 a potential alternative to Pt-based electrocatalysts for the hydrogen evolution reaction （HER）. Here, we demonstrate for the first time the successful synthesis of uniform monolayer WS2 nanosheets on centimeter- scale Au foils using a facile, low-pressure chemical vapor deposition method. The edge lengths of the universally observed triangular WS2 nanosheets are tunable from -100 to N1,000 nm. The WS2 nanosheets on Au foils featuring abundant edges were then discovered to be efficient catalysts for the HER, exhibiting a rather high exchange current density of -30.20 μA/cm2 and a small onset potential of Nl10 mV. The effects of coverage and domain size （which correlate closely with the active edge density of WS2） on the electrocatalytic activity were investigated. This work not only provides a novel route toward the batch-production of monolayer WS2 via the introduction of metal foil substrates but also opens up its direct application for facile HER.

Strain Effects in Graphene and Graphene Nanoribbons:The Underlying Mechanism

A tight-binding analytic framework is combined with first-principles calculations to reveal the mechanism underlying the strain effects on electronic structures of graphene and graphene nanoribbons(GNRs).It provides a unified and precise formulation of the strain effects under various circumstances-including the shift of the Fermi(Dirac)points,the change in band gap of armchair GNRs with uniaxial strain in a zigzag pattern and its insensitivity to shear strain,and the variation of the k-range of edge states in zigzag GNRs under uniaxial and shear strains which determine the gap behavior via the spin polarization interaction.

The Origin of Wrinkles on Transferred Graphene

当二维的 graphene 是从三维的高度面向的 pyrolytic 石墨(HOPG ) 的 exfoliated 时，涟漪或折皱总是由于内在的热变化存在。表面成年的 graphenes 也展出皱纹，它在尺寸是更大的并且被认为被差别在高温度生长以后在冷却过程在在 graphene 和内在的底层之间的热扩大系数引起。为进一步的描述和应用程序，转移表面成年的 graphenes 到绝缘的底层上是必要的，并且另外的皱纹在这进程期间被产生。这里，我们集中于转移 graphene 的皱纹并且证明生长底层的表面形态学是在面对面的转移过程产生的新皱纹的起源；我们把这些称为导致形态学的皱纹。把地志的数据基于几千原子力量显微镜学(AFM ) 的小心的统计分析，我们断定转移很少层 graphene 上的这些皱纹(典型地 13 层) 被生长底层形态学和转移决定过程。取决于转移媒介和条件，大多数皱纹也能被擦掉或保存。我们的工作为涉及组织生长底层并且定制转移过程的 graphene 工程建议一条新线路。