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Recent progress on non-thermal plasma technology for high barrier layer fabrication 被引量:4
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作者 Haibao ZHANG Lijun SANG +3 位作者 Zhengduo WANG zhongwei llu Lizhen YANG Qiang CHEN 《Plasma Science and Technology》 SCIE EI CAS CSCD 2018年第6期1-16,共16页
This review describes the application of non-thermal plasma(NTP) technology for high barrier layer fabrication in packaging area.NTP technology is considered to be the most prospective approaches for the barrier lay... This review describes the application of non-thermal plasma(NTP) technology for high barrier layer fabrication in packaging area.NTP technology is considered to be the most prospective approaches for the barrier layer fabrication over the past decades due to unpollution,high speed,low-costing.The applications of NTP technology have achieved numerous exciting results in high barrier packaging area.Now it seemly demands a detailed review to summarize the past works and direct the future developments.This review focuses on the different NTP resources applied in the high barrier area,the role of plasma surface modification on packaging film surface properties,and the deposition of different barrier coatings based on NTP technology.In particular,this review emphasizes the cutting-edge technologies of NTP on interlayer deposition with organic,inorganic for multilayer barriers fabrication.The future prospects of NTP technology in high barrier film areas are also described. 展开更多
关键词 non-thermal plasma(NTP) polymer permeability barrier layer surface modification
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Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
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作者 Yuqing XIONG Hengjiao GAO +1 位作者 Ni REN zhongwei llu 《Plasma Science and Technology》 SCIE EI CAS CSCD 2018年第3期146-150,共5页
Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature,using copper(I)-N,N′-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas.The influence of temperatur... Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature,using copper(I)-N,N′-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas.The influence of temperature,plasma power,mode of plasma,and pulse time,on the deposition rate of copper thin film,the purity of the film and the step coverage were studied.The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied.The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy,respectively.The square resistance of the thin film was also tested by a four-probe technique.On the basis of on-line diagnosis,a growth mechanism of copper thin film was put forward,and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films.A high density of plasma and high free-radical content were helpful for the deposition of copper thin films. 展开更多
关键词 atomic layer deposition COPPER inner wall WAVEGUIDE high aspect ratio
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