Quasi‑Solid Electrolyte Interphase Boosting Charge and Mass Transfer for Dendrite‑Free Zinc Battery

The practical applications of zinc metal batteries are plagued by the dendritic propagation of its metal anodes due to the limited transfer rate of charge and mass at the electrode/electrolyte interphase.To enhance the reversibility of Zn metal,a quasi-solid interphase composed by defective metal-organic framework(MOF)nanoparticles(D-UiO-66)and two kinds of zinc salts electrolytes is fabricated on the Zn surface served as a zinc ions reservoir.Particularly,anions in the aqueous electrolytes could be spontaneously anchored onto the Lewis acidic sites in defective MOF channels.With the synergistic effect between the MOF channels and the anchored anions,Zn^(2+)transport is prompted significantly.Simultaneously,such quasi-solid interphase boost charge and mass transfer of Zn^(2+),leading to a high zinc transference number,good ionic conductivity,and high Zn^(2+)concentration near the anode,which mitigates Zn dendrite growth obviously.Encouragingly,unprecedented average coulombic efficiency of 99.8%is achieved in the Zn||Cu cell with the proposed quasi-solid interphase.The cycling performance of D-UiO-66@Zn||MnO_(2)(~92.9%capacity retention after 2000 cycles)and D-UiO-66@Zn||NH_(4)V_(4)O_(10)(~84.0%capacity retention after 800 cycles)prove the feasibility of the quasi-solid interphase.

Investigations on ion implantation-induced strain in rotated Y-cut LiNbO_(3) and LiTaO_(3)

The monocrystalline LiNbO_(3)(LN)and LiTaO_(3)(LT)plates have been qualified as a kind of material platform for high performance RF filter that is considerable for the 5G communication.LN and LT thin films are usually transferred on handle wafers by combining ion-slicing and wafer bonding technique to form a piezoelectric on insulator(POI)substrate.The ion implantation is a key process and the implantation-induced strain is essential for the layer transfer.Here,we reported the strain profile of ion implanted rotated Y-cut LN and LT.The ion implantation generates the out-of-plane tensile strain of the sample surface and(006)plane,while both the tensile and compressive strain are observed on the(030)plane.The implanted ions redistributed due to the anisotropy of LN and LT,and induce the main tensile normal to the(006)plane.Meanwhile,the(030)planes are contracted due to the Poisson effect with the interstitial ions disturbing and mainly show a compressive strain profile.

High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics

The realization of high-quality(Q)resonators regardless of the underpinning material platforms has been a ceaseless pursuit,because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies.Here,photonic microresonators with a mean Q factor of 6.75×10^(6)were demonstrated on a 4H-silicon-carbide-on-insulator(4H-SiCOI)platform,as determined by a statistical analysis of tens of resonances.Using these devices,broadband frequency conversions,including second-,third-,and fourth-harmonic generations have been observed.Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time,to the best of our knowledge.Meanwhile,by engineering the dispersion properties of the SiC microresonator,we have achieved broadband Kerr frequency combs covering from 1300 to 1700nm.Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.