We numerically demonstrate a photo-excited plasmon-induced transparency(PIT)effect in hybrid terahertz(THz)metamaterials.The proposed metamaterials are regular arrays of hybrid unit cells composed of a metallic cut wi...We numerically demonstrate a photo-excited plasmon-induced transparency(PIT)effect in hybrid terahertz(THz)metamaterials.The proposed metamaterials are regular arrays of hybrid unit cells composed of a metallic cut wire and four metallic split-ring resonators(SRRs)whose gaps are filled with photosensitive semiconductor gallium arsenide(GaAs)patches.We simulate the PIT effect controlled by external infrared light intensity to change the conductivity of GaAs.In the absence of photo excitation,the conductivity of Ga As is 0,thus the SRR gaps are disconnected,and the PIT effect is not observed since the dark resonator(supported by the hybrid SRRs)cannot be stimulated.When the conductivity of GaAs is increased via photo excitation,the conductivity of Ga As can increase rapidly from 0 S/m to 1×10^(6)S/m and GaAs can connect the metal aluminum SRR gaps,and the dark resonator is excited through coupling with the bright resonator(supported by the cut wire),which leads to the PIT effect.Therefore,the PIT effect can be dynamically tuned between the on and off states by controlling the intensity of the external infrared light.We also discuss couplings between one bright mode(CW)and several dark modes(SRRs)with different sizes.The interference analytically described by the coupled Lorentz oscillator model elucidates the coupling mechanism between one bright mode and two dark modes.The phenomenon can be considered the result of linear superposition of the coupling between the bright mode and each dark mode.The proposed metamaterials are promising for application in the fields of THz communications,optical storage,optical display,and imaging.展开更多
基金supported by the National Science and Technology Major Project(Grant No.2017ZX02101007-003)the National Natural Science Foundation of China(Grant No.61965005)+4 种基金the National Natural Science Foundation of China(Grant No.62105187)the Natural Science Foundation of Guangxi Province(Grant No.2019GXNSFDA185010)Guangxi Distinguished Expert Project,Foundation of Guangxi Key Laboratory of Optoelectronic Information Processing(Grant No.GD20104)the Natural Science Foundation of Shandong Province,China(Grant No.ZR2021QF010)the Innovation Project of Guang Xi Graduate Education(Grant No.YCSW2020158)。
文摘We numerically demonstrate a photo-excited plasmon-induced transparency(PIT)effect in hybrid terahertz(THz)metamaterials.The proposed metamaterials are regular arrays of hybrid unit cells composed of a metallic cut wire and four metallic split-ring resonators(SRRs)whose gaps are filled with photosensitive semiconductor gallium arsenide(GaAs)patches.We simulate the PIT effect controlled by external infrared light intensity to change the conductivity of GaAs.In the absence of photo excitation,the conductivity of Ga As is 0,thus the SRR gaps are disconnected,and the PIT effect is not observed since the dark resonator(supported by the hybrid SRRs)cannot be stimulated.When the conductivity of GaAs is increased via photo excitation,the conductivity of Ga As can increase rapidly from 0 S/m to 1×10^(6)S/m and GaAs can connect the metal aluminum SRR gaps,and the dark resonator is excited through coupling with the bright resonator(supported by the cut wire),which leads to the PIT effect.Therefore,the PIT effect can be dynamically tuned between the on and off states by controlling the intensity of the external infrared light.We also discuss couplings between one bright mode(CW)and several dark modes(SRRs)with different sizes.The interference analytically described by the coupled Lorentz oscillator model elucidates the coupling mechanism between one bright mode and two dark modes.The phenomenon can be considered the result of linear superposition of the coupling between the bright mode and each dark mode.The proposed metamaterials are promising for application in the fields of THz communications,optical storage,optical display,and imaging.