Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attract-ing great interest since the tuning of semiconductor properties increasingly relies on extreme measure...Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attract-ing great interest since the tuning of semiconductor properties increasingly relies on extreme measures.In this review we fo-cus on hyperdoped silicon(Si)by introducing methods used for the hyperdoping of Si such as ion implantation and laser dop-ing,discussing the electrical and optical properties of hyperdoped bulk Si,Si nanocrystals,Si nanowires and Si films,and present-ing the use of hyperdoped Si for devices like infrared photodetectors and solar cells.The perspectives of the development of hy-perdoped Si are also provided.展开更多
To meet a growing demand for information processing,brain-inspired neuromorphic devices have been intensively studied in recent years.As an important type of neuromorphic device,synaptic devices have attracted strong ...To meet a growing demand for information processing,brain-inspired neuromorphic devices have been intensively studied in recent years.As an important type of neuromorphic device,synaptic devices have attracted strong attention.Among all the kinds of materials explored for the fabrication of synaptic devices,semiconductor nanocrystals(NCs)have become one of the preferred choices due to their excellent electronic and optical properties.In this review,we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs.Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices.Finally,we discuss existing problems and challenges of synaptic devices based on semiconductor NCs.展开更多
基金supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0205704 and 2018YFB2200101)the Natural Science Foundation of China (Grant Nos. 91964107 and U20A20209)provided by the Natural Science Foundation of China for Innovative Research Groups (Grant No. 61721005)
文摘Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attract-ing great interest since the tuning of semiconductor properties increasingly relies on extreme measures.In this review we fo-cus on hyperdoped silicon(Si)by introducing methods used for the hyperdoping of Si such as ion implantation and laser dop-ing,discussing the electrical and optical properties of hyperdoped bulk Si,Si nanocrystals,Si nanowires and Si films,and present-ing the use of hyperdoped Si for devices like infrared photodetectors and solar cells.The perspectives of the development of hy-perdoped Si are also provided.
基金Project supported by the National Key Research and Development Program of China(No.2018YFB2200101)the National Natural Science Foundation of China(Nos.91964107,U20A20209,and61721005)。
文摘To meet a growing demand for information processing,brain-inspired neuromorphic devices have been intensively studied in recent years.As an important type of neuromorphic device,synaptic devices have attracted strong attention.Among all the kinds of materials explored for the fabrication of synaptic devices,semiconductor nanocrystals(NCs)have become one of the preferred choices due to their excellent electronic and optical properties.In this review,we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs.Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices.Finally,we discuss existing problems and challenges of synaptic devices based on semiconductor NCs.
