Recently, transition metal dichalcogenides （TMDCs） semiconductors have been utilized for investi- gating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot ...Recently, transition metal dichalcogenides （TMDCs） semiconductors have been utilized for investi- gating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot （QD）, electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the defini- tion of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confim~ ment and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional （2D） materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on electron transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.展开更多
基金This work was supported by the Na- tional Key R＆D Program （Grant No. 2016YFA0301700）, the Strategic Priority Research Program of the CAS （Grant No. XDB01030000）, the National Natural Science Foundation of China （Grant Nos. 11304301, 11575172, 613061507 and 91421303）, and the Fundamental Research Fund for the Central Universities （No. WK2470000017）.
文摘Recently, transition metal dichalcogenides （TMDCs） semiconductors have been utilized for investi- gating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot （QD）, electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the defini- tion of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confim~ ment and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional （2D） materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on electron transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.
