The Paleoproterozoic tectonic evolution of the Bangweulu Block has long been controversial.Paleoproterozoic granites consisting of the basement complex of the Bangweulu Block are widely exposed in northeastern Zambia,...The Paleoproterozoic tectonic evolution of the Bangweulu Block has long been controversial.Paleoproterozoic granites consisting of the basement complex of the Bangweulu Block are widely exposed in northeastern Zambia,and they are the critical media for studying the tectonic evolution of the Bangweulu Block.This study systematically investigated the petrography,zircon U-Pb chronology,and petrogeochemistry of the granitoid extensively exposed in the Lunte area,northeastern Zambia.The results show that the granitoid in the area formed during 2051±13-2009±20 Ma as a result of Paleoproterozoic magmatic events.Geochemical data show that the granites in the area mainly include syenogranites and monzogranites of high-K calc-alkaline series and are characterized by high SiO2 content(72.68%‒73.78%)and K_(2)O/Na_(2)O ratio(1.82‒2.29).The presence of garnets,the high aluminum saturation index(A/CNK is 1.13‒1.21),and the 1.27%‒1.95%of corundum molecules jointly indicate that granites in the Lunte area are S-type granites.Rare earth elements in all samples show a rightward inclination and noticeably negative Eu-anomalies(δEu=0.16‒0.40)and are relatively rich in light rare earth elements.Furthermore,the granites are rich in large ion lithophile elements such as Rb,Th,U,and K and are depleted in Ba,Sr,and high field strength elements such as Ta and Nb.In addition,they bear low contents of Cr(6.31×10^(−6)‒10.8×10^(−6)),Ni(2.87×10^(−6)‒4.76×10^(−6)),and Co(2.62×10^(−6)‒3.96×10^(−6)).These data lead to the conclusion that the source rocks are meta-sedimentary rocks.Combining the above results and the study of regional tectonic evolution,the authors suggest that granitoid in the Lunte area were formed in a tectonic environment corresponding to the collision between the Tanzania Craton and the Bangweulu Block.The magmatic activities in this period may be related to the assembly of the Columbia supercontinent.展开更多
The melting curve of MgSiO3 perovskite was simulated using molecular dynamics method combining with the effective pair potentials under the lower mantle conditions. It was shown that the state equation simulated for M...The melting curve of MgSiO3 perovskite was simulated using molecular dynamics method combining with the effective pair potentials under the lower mantle conditions. It was shown that the state equation simulated for MgSiO3 perovskite is very successful in reproducing accurately the experimental data over a wide range of pressure. The pressure dependence of the simulated melting temperature of MgSiO3 perovskite is in agreement with the recent experimental data. The melting curve simulated for MgSiO3 is very steep at pressures below 60 GPa first, then it becomes smooth with increasing pressure. At the core mantle boundary pressure 135 GPa, MgSiO3 perovskite melts at 6500 K, which is significantly lower than that of the extrapolations of the experimental data from Zerr and Boehler.展开更多
When the GaAs/AlGaAs superlattice-based devices are used under irradiation environments, point defects may be created and ultimately deteriorate their electronic and transport properties. Thus, understanding the prope...When the GaAs/AlGaAs superlattice-based devices are used under irradiation environments, point defects may be created and ultimately deteriorate their electronic and transport properties. Thus, understanding the properties of point defects like vacancies and interstitials is essential for the successful application of semiconductor materials. In the present study, first-principles calculations are carried out to explore the stability of point defects in GaAs/Al_(0.5)Ga_(0.5)As superlattice and their effects on electronic properties. The results show that the interstitial defects and Frenkel pair defects are relatively difficult to form, while the antisite defects are favorably created generally. Besides, the existence of point defects generally modifies the electronic structure of GaAs/Al_(0.5)Ga_(0.5)As superlattice significantly, and most of the defective SL structures possess metallic characteristics. Considering the stability of point defects and carrier mobility of defective states,we propose an effective strategy that AlAs, GaAs, and AlGaantisite defects are introduced to improve the hole or electron mobility of GaAs/Al_(0.5)Ga_(0.5)As superlattice. The obtained results will contribute to the understanding of the radiation damage effects of the GaAs/AlGaAs superlattice, and provide a guidance for designing highly stable and durable semiconductor superlattice-based electronics and optoelectronics for extreme environment applications.展开更多
The geometries, electronic structures, polarizabilities and hyperpolarizabilities, as well as the UV-Vis spectra of the two organic dye sensitizers containing bis-dimethylfluorenyl amino benzofuran were studied via de...The geometries, electronic structures, polarizabilities and hyperpolarizabilities, as well as the UV-Vis spectra of the two organic dye sensitizers containing bis-dimethylfluorenyl amino benzofuran were studied via density functional theory (DFT) and time-dependent DFT. The features of electronic absorption spectra were assigned on account of the agreement between the experiment and the calculations. The absorption bands in visible region are related to photoinduced electron transfer processes, and the dimethylfluorenyl amino benzo[b]furan groups are major chromophore that contributed to the sensitization of photo-to-current conversion. The role of vinylene group in geometry, electronic structure and spectra property is analyzed according to the comparative study of the dyes.展开更多
The equation of state of MgSiO3 perovskite under high pressure and high temperature is simulated using the molecular dynamics method. It was found that the molecular dynamics simulation is very successful in accuratel...The equation of state of MgSiO3 perovskite under high pressure and high temperature is simulated using the molecular dynamics method. It was found that the molecular dynamics simulation is very successful in accurately reproducing the measured molar volumes of MgSiO3 perovskite over a wide range of temperatures and pressures. The simulated equation of state of MgSiO3 perovskite matched experimental data at up to 140GPa at 300K, as well as the fitting data of others and results from the first-principles simulation based on the local density approximation. The simulated equations of state of MgSiO3 perovskite at higher temperatures and higher pressures also correspond to the other calculations. In addition, the volume compression data of MgSiO3 perovskite is simulated up to 120 GPa at 300, 900, 2000 and 3000 K, respectively.展开更多
基金This work was supported by the National Natural Science Foundation of China(No.11964016)the HongLiu First-class Disciplines Development Program of Lanzhou University of Technology.The authors were grateful to the National Supercomputing Center in Shenzhen.
基金This study was jointly funded by projects of the Ministry of Commerce([2015]352 and[2012]558)the projects of the China Geological Survey(DD20201150 and 1212011220910)。
文摘The Paleoproterozoic tectonic evolution of the Bangweulu Block has long been controversial.Paleoproterozoic granites consisting of the basement complex of the Bangweulu Block are widely exposed in northeastern Zambia,and they are the critical media for studying the tectonic evolution of the Bangweulu Block.This study systematically investigated the petrography,zircon U-Pb chronology,and petrogeochemistry of the granitoid extensively exposed in the Lunte area,northeastern Zambia.The results show that the granitoid in the area formed during 2051±13-2009±20 Ma as a result of Paleoproterozoic magmatic events.Geochemical data show that the granites in the area mainly include syenogranites and monzogranites of high-K calc-alkaline series and are characterized by high SiO2 content(72.68%‒73.78%)and K_(2)O/Na_(2)O ratio(1.82‒2.29).The presence of garnets,the high aluminum saturation index(A/CNK is 1.13‒1.21),and the 1.27%‒1.95%of corundum molecules jointly indicate that granites in the Lunte area are S-type granites.Rare earth elements in all samples show a rightward inclination and noticeably negative Eu-anomalies(δEu=0.16‒0.40)and are relatively rich in light rare earth elements.Furthermore,the granites are rich in large ion lithophile elements such as Rb,Th,U,and K and are depleted in Ba,Sr,and high field strength elements such as Ta and Nb.In addition,they bear low contents of Cr(6.31×10^(−6)‒10.8×10^(−6)),Ni(2.87×10^(−6)‒4.76×10^(−6)),and Co(2.62×10^(−6)‒3.96×10^(−6)).These data lead to the conclusion that the source rocks are meta-sedimentary rocks.Combining the above results and the study of regional tectonic evolution,the authors suggest that granitoid in the Lunte area were formed in a tectonic environment corresponding to the collision between the Tanzania Craton and the Bangweulu Block.The magmatic activities in this period may be related to the assembly of the Columbia supercontinent.
基金V. ACKN0WLEDGEMENTS This work was supported by the National Natural Science Foundation of China (No.10574096), the Natural Science Foundation of Gansu Province of China (No.3ZS051-A25-027) and the Scientific Research Foundation of Education Bureau of Gansu Province of China (No.0410-01).
文摘The melting curve of MgSiO3 perovskite was simulated using molecular dynamics method combining with the effective pair potentials under the lower mantle conditions. It was shown that the state equation simulated for MgSiO3 perovskite is very successful in reproducing accurately the experimental data over a wide range of pressure. The pressure dependence of the simulated melting temperature of MgSiO3 perovskite is in agreement with the recent experimental data. The melting curve simulated for MgSiO3 is very steep at pressures below 60 GPa first, then it becomes smooth with increasing pressure. At the core mantle boundary pressure 135 GPa, MgSiO3 perovskite melts at 6500 K, which is significantly lower than that of the extrapolations of the experimental data from Zerr and Boehler.
基金Project supported by the NSAF Joint Foundation of China (Grant No. U1930120)the Key Natural Science Foundation of Gansu Province, China (Grant No. 20JR5RA211)the National Natural Science Foundation of China (Grant No. 11774044)。
文摘When the GaAs/AlGaAs superlattice-based devices are used under irradiation environments, point defects may be created and ultimately deteriorate their electronic and transport properties. Thus, understanding the properties of point defects like vacancies and interstitials is essential for the successful application of semiconductor materials. In the present study, first-principles calculations are carried out to explore the stability of point defects in GaAs/Al_(0.5)Ga_(0.5)As superlattice and their effects on electronic properties. The results show that the interstitial defects and Frenkel pair defects are relatively difficult to form, while the antisite defects are favorably created generally. Besides, the existence of point defects generally modifies the electronic structure of GaAs/Al_(0.5)Ga_(0.5)As superlattice significantly, and most of the defective SL structures possess metallic characteristics. Considering the stability of point defects and carrier mobility of defective states,we propose an effective strategy that AlAs, GaAs, and AlGaantisite defects are introduced to improve the hole or electron mobility of GaAs/Al_(0.5)Ga_(0.5)As superlattice. The obtained results will contribute to the understanding of the radiation damage effects of the GaAs/AlGaAs superlattice, and provide a guidance for designing highly stable and durable semiconductor superlattice-based electronics and optoelectronics for extreme environment applications.
基金This work supported by the National Natural Science Foundation of China (No.10647006), the Promineat Youth Foundation (No.Q200704), and the Scientific Developmental Foundation of Lanzhou University of Technology. Zi-jiang Liu would like to appreciate the Key Project of Chinese Minsitry of Education (No.209127). Cai-rong Zhang would like to thank professor Wan-zhen Liang (USTC), and the Gansu Supercomputer Center is also appreciated.
文摘The geometries, electronic structures, polarizabilities and hyperpolarizabilities, as well as the UV-Vis spectra of the two organic dye sensitizers containing bis-dimethylfluorenyl amino benzofuran were studied via density functional theory (DFT) and time-dependent DFT. The features of electronic absorption spectra were assigned on account of the agreement between the experiment and the calculations. The absorption bands in visible region are related to photoinduced electron transfer processes, and the dimethylfluorenyl amino benzo[b]furan groups are major chromophore that contributed to the sensitization of photo-to-current conversion. The role of vinylene group in geometry, electronic structure and spectra property is analyzed according to the comparative study of the dyes.
基金This work was supported by the National Natural Sci- ence Foundation of China, (NSFC No. 10274055), the Natural Science Foundation of Gansu Province of China (No. 3ZS051-A25-027) and the Natural Science Foundation of Education Department of Gansu Province of China (No. 0410-01).
文摘The equation of state of MgSiO3 perovskite under high pressure and high temperature is simulated using the molecular dynamics method. It was found that the molecular dynamics simulation is very successful in accurately reproducing the measured molar volumes of MgSiO3 perovskite over a wide range of temperatures and pressures. The simulated equation of state of MgSiO3 perovskite matched experimental data at up to 140GPa at 300K, as well as the fitting data of others and results from the first-principles simulation based on the local density approximation. The simulated equations of state of MgSiO3 perovskite at higher temperatures and higher pressures also correspond to the other calculations. In addition, the volume compression data of MgSiO3 perovskite is simulated up to 120 GPa at 300, 900, 2000 and 3000 K, respectively.