Transient electronics has attracted interest as an emerging technology to solve electronic-waste problem,due to its physically vanishing ability in solution.Here in this work,we demonstrate a flexible and degradable t...Transient electronics has attracted interest as an emerging technology to solve electronic-waste problem,due to its physically vanishing ability in solution.Here in this work,we demonstrate a flexible and degradable transient resistive switching(RS) memory device with simple structure of Cu/sodium alginate(SA)/ITO.The device presents excellent RS characteristics as well as high flexibility,including low operating voltage(<1.5 V) and multilevel RS behavior.No performance degradation occurs after bending the device 50 times.Moreover,our device can be absolutely dissolved in deionized water.The proposed SA-based transient memory device has great potential for the development of green and security memory devices.展开更多
基金Project supported by the Fund from the Ministry of Science and Technology of China(Grant No.2018YFE0118300)the National Natural Science Foundation of China(Grant Nos.11974072,51902048,61774031,and 61574031)+3 种基金the“111”Project,China(Grant No.B13013)the China Postdoctoral Science Foundation,China(Grant No.2019M661185)the Fundamental Research Funds for the Central Universities,China(Grant No.2412019QD015)Science Fund from the Jilin Province,China(Grant No.JJKH20201163KJ)。
文摘Transient electronics has attracted interest as an emerging technology to solve electronic-waste problem,due to its physically vanishing ability in solution.Here in this work,we demonstrate a flexible and degradable transient resistive switching(RS) memory device with simple structure of Cu/sodium alginate(SA)/ITO.The device presents excellent RS characteristics as well as high flexibility,including low operating voltage(<1.5 V) and multilevel RS behavior.No performance degradation occurs after bending the device 50 times.Moreover,our device can be absolutely dissolved in deionized water.The proposed SA-based transient memory device has great potential for the development of green and security memory devices.
