The aging characteristics,e.g.,the evolution of efficiency and luminance of quantum-dot light-emitting diodes(QLEDs)are greatly affected by the encapsulation.When encapsulated with ultraviolet curable resin,the effici...The aging characteristics,e.g.,the evolution of efficiency and luminance of quantum-dot light-emitting diodes(QLEDs)are greatly affected by the encapsulation.When encapsulated with ultraviolet curable resin,the efficiency is increased over time,a known phenomenon termed as positive aging which remains one of the unsolved mysteries.By developing a physical model and an analytical model,we identify that the efficiency improvement is mainly attributed to the suppression of hole leakage current that is resulted from the passivation of ZnMgO defects.When further encapsulated with desiccant,the positive aging effect vanishes.Tofully take the advantage of positive aging,the desiccant is incorporated after the positive aging process is completed.With the new encapsulation method,the QLED exhibits a high external quantum efficiency of 20.19%and a half lifetime of 1,267 h at an initial luminance of 2,800 cd·m^(-2),which are improved by 1.4 and 6.0 folds,respectively,making it one of the best performing devices.Our work provides an in-depth and systematic understanding of the mechanism of positive aging and offers a practical encapsulation way for realizing efficient and stable QLEDs.展开更多
The influence of H_(2)O and O_(2) on the performances of Mg-doped zinc oxide (ZnMgO) and ZnMgO-based inverted quantum-dot light-emitting diodes (QLEDs) are studied. With the involvement of H_(2)O from ambience, ZnMgO ...The influence of H_(2)O and O_(2) on the performances of Mg-doped zinc oxide (ZnMgO) and ZnMgO-based inverted quantum-dot light-emitting diodes (QLEDs) are studied. With the involvement of H_(2)O from ambience, ZnMgO exhibits a high conductivity, whereas the resultant QLEDs show a low efficiency. The efficiency of QLEDs can be enhanced by annealing ZnMgO in H_(2)O-free glovebox;however, the uniformity and the current of the devices are degraded due to the presence of O_(2), which adsorbs on the surface of ZnMgO and captures the free electrons of ZnMgO. By exposing the devices with ultraviolet (UV) irradiation, the adsorbed O_(2) can be released, consequently leading to the increase of driving current. Our work discloses the influence of the annealing ambience on the conductivity of ZnMgO, and reveals the interaction of H_(2)O/O_(2) and UV with the ZnMgO and its effect on the performance of the resultant inverted QLEDs, which could help the community to better understand the mechanisms of ZnMgO-based QLEDs.展开更多
基金the National Natural Science Foundation of China(No.61775090)the Guangdong Natural Science Funds for Distinguished Young Scholars(No.2016A030306017)the Guangdong Special Funds for Science and Technology Development(No.2017A050506001).
文摘The aging characteristics,e.g.,the evolution of efficiency and luminance of quantum-dot light-emitting diodes(QLEDs)are greatly affected by the encapsulation.When encapsulated with ultraviolet curable resin,the efficiency is increased over time,a known phenomenon termed as positive aging which remains one of the unsolved mysteries.By developing a physical model and an analytical model,we identify that the efficiency improvement is mainly attributed to the suppression of hole leakage current that is resulted from the passivation of ZnMgO defects.When further encapsulated with desiccant,the positive aging effect vanishes.Tofully take the advantage of positive aging,the desiccant is incorporated after the positive aging process is completed.With the new encapsulation method,the QLED exhibits a high external quantum efficiency of 20.19%and a half lifetime of 1,267 h at an initial luminance of 2,800 cd·m^(-2),which are improved by 1.4 and 6.0 folds,respectively,making it one of the best performing devices.Our work provides an in-depth and systematic understanding of the mechanism of positive aging and offers a practical encapsulation way for realizing efficient and stable QLEDs.
基金This work was supported by the National Natural Science Foundation of China (No. 61775090)the Guangdong Natural Science Funds for Distinguished Young Scholars (No. 2016A030306017).
文摘The influence of H_(2)O and O_(2) on the performances of Mg-doped zinc oxide (ZnMgO) and ZnMgO-based inverted quantum-dot light-emitting diodes (QLEDs) are studied. With the involvement of H_(2)O from ambience, ZnMgO exhibits a high conductivity, whereas the resultant QLEDs show a low efficiency. The efficiency of QLEDs can be enhanced by annealing ZnMgO in H_(2)O-free glovebox;however, the uniformity and the current of the devices are degraded due to the presence of O_(2), which adsorbs on the surface of ZnMgO and captures the free electrons of ZnMgO. By exposing the devices with ultraviolet (UV) irradiation, the adsorbed O_(2) can be released, consequently leading to the increase of driving current. Our work discloses the influence of the annealing ambience on the conductivity of ZnMgO, and reveals the interaction of H_(2)O/O_(2) and UV with the ZnMgO and its effect on the performance of the resultant inverted QLEDs, which could help the community to better understand the mechanisms of ZnMgO-based QLEDs.
