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Unconventional ferroelectricity in half-filling states of antiparallel stacking of twisted WSe_(2)
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作者 Liheng An zishu zhou +9 位作者 Xuemeng Feng Meizhen Huang Xiangbin Cai Yong Chen Pei Zhao Xi Dai Jingdi Zhang Wang Yao Junwei Liu Ning Wang 《National Science Open》 2023年第1期24-34,共11页
We report on emergence of an abnormal electronic polarization in twisted double bilayer WSe_(2) in antiparallel interface stacking geometry,where local centrosymmetry of atomic registries at the twist interface does n... We report on emergence of an abnormal electronic polarization in twisted double bilayer WSe_(2) in antiparallel interface stacking geometry,where local centrosymmetry of atomic registries at the twist interface does not favor the spontaneous electronic polarizations as recently observed in the parallel interface stacking geometry.The unconventional ferroelectric behaviors probed by electronic transport measurement occur at half filling insulating states at 1.5 K and gradually disappear at about 40 K.Single band Hubbard model based on the triangular moirélattice and the interlayer charge transfer controlled by insulating phase transition are proposed to interpret the formation of electronic polarization states near half filling in twisted WSe_(2) devices.Our work highlights the prominent role of many-body electronic interaction in fostering novel quantum states in moiré-structured systems. 展开更多
关键词 two-dimensional semiconductor twist moiré FERROELECTRICITY electron interaction electronic transport
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