HfAlO-based ferroelectric memristors for artificial synaptic plasticity

Memristors have received much attention for their ability to achieve multi-level storage and synaptic learning.However,the main factor that hinders the application of memristors to simulate neural synapses is the instability of the formation and breakage of conductive filaments inside traditional memristors,which makes it difficult to simulate the function of biological synapses in practice.However,the resistance change of ferroelectric memristors relies on the polarization inversion of the ferroelectric thin film,thus avoiding the above problem.In this study,a Pd/HfAlO/LSMO/STO/Si ferroelectric memristor is proposed,which can achieve resistive switching properties through the combined action of ferroelectricity and oxygen vacancies.The I−V curves show that the device has good stability and uniformity.In addition,the effect of pulse sequence modulation on the conductance was investigated,and the biological synaptic function and learning behavior were simulated successfully.The results of the above studies provide a basis for the development of ferroelectric memristors with neurosynaptic-like behaviors.

Superlow Power Consumption Artificial Synapses Based on WSe2 Quantum Dots Memristor for Neuromorphic Computing

As the emerging member of zero-dimension transition metal dichalcogenide,WSe2 quantum dots(QDs)have been applied to memristors and exhibited better resistance switching characteristics and miniaturization size.However,low power consumption and high reliability are still challenges for WSe_(2) QDs-based memristors as synaptic devices.

Silicon-based epitaxial ferroelectric memristor for high temperature operation in self-assembled vertically aligned BaTiO_(3)-CeO_(2) films

Ferroelectric memristors,as one of the most potential non-volatile memory to meet the rapid development of the artificial intelligence era,have the comprehensive function of simulating brain storage and calculation.However,due to the high dielectric loss of traditional ferroelectric materials,the durability of ferroelectric memristors and Si based integration have a great challenge.Here,we report a silicon-based epitaxial ferroelectric memristor based on self-assembled vertically aligned nanocomposites BaTiO_(3)(BTO)-CeO_(2) films.The BTO-CeO_(2) memristors exhibit a stable resistance switching behavior at a high temperature of 100℃ due to higher Curie temperatures of BTO-CeO_(2) films with in-plane compressive strain.And the endurance of the device can reach the order of magnitude of 1×106 times.More importantly,the device has excellent functions for simulating artificial synaptic behavior,including excitatory post-synaptic current,paired-pulse facilitation,paired-pulse depression,spike-time-dependent plasticity,and short and long-term plasticity.Digits recognition ability of the memristor devices is evaluated though a single-layer perceptron model,in which recognition accuracy of digital can reach 86.78%after 20 training iterations.These results provide new way for epitaxial composite ferroelectric films as memristor medium with high temperature intolerance and better durability integrated on silicon.