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质子注入对GaAs基器件隔离研究
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作者 宗梦雅 代京京 +3 位作者 李尉 温丛阳 张彤 王智勇 《红外与激光工程》 EI CSCD 北大核心 2022年第12期300-306,共7页
质子注入参数对注入型垂直腔面发射激光器(Vertical cavity surface emitting laser,VCSEL)的电流限制孔径位置及电流限制效果具有较大影响。文中从质子注入的能量和剂量及其相互作用对VCSEL电流限制孔径的影响规律及机制出发,通过理论... 质子注入参数对注入型垂直腔面发射激光器(Vertical cavity surface emitting laser,VCSEL)的电流限制孔径位置及电流限制效果具有较大影响。文中从质子注入的能量和剂量及其相互作用对VCSEL电流限制孔径的影响规律及机制出发,通过理论模拟分析了注入参数对质子分布及注入区电阻值的影响。在此基础上,采用VCSEL外延片进行了质子注入实验研究。实验结果和理论分析均表明:注入区电流隔离效果及质子分布受注入能量和剂量共同调控。当注入参数为320keV、8×10^(14)cm^(-2)时,经430℃、30s退火后可得到结深约0.7μm,平均射程距有源区约1.3μm,电阻值达4.6×10^(7)Ω·cm^(2)的质子注入区。使用该参数制备的VCSEL器件实现了较好的激光激射,证明该质子分布不仅可避免VCSEL有源区损伤,而且能实现较好的电流隔离效果,满足VCSEL电流限制孔径的制备要求。研究结果对质子注入型VCSEL的芯片结构及工艺优化具有重要指导意义。 展开更多
关键词 质子注入 垂直腔面发射激光器 GaAs基质 晶格缺陷
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Synergistic Effect between Zr-MOF and Phosphotungstic Acid for Oxidative Desulfurization 被引量:5
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作者 zong mengya Zhao Yutong +1 位作者 Fan Cunzheng Wang Danhong 《China Petroleum Processing & Petrochemical Technology》 SCIE CAS 2020年第4期56-62,共7页
PTA/UiO-66 composites were successfully synthesized by the hydrothermal method.The results showed that the synergistic effect between phosphotungstic acid(PTA)and UiO-66 could enhance the oxidative desulfurization(ODS... PTA/UiO-66 composites were successfully synthesized by the hydrothermal method.The results showed that the synergistic effect between phosphotungstic acid(PTA)and UiO-66 could enhance the oxidative desulfurization(ODS)activity.The XRD results proved that UiO-66 retained its structure in the PTA/UiO-66 composites.The SEM results showed that the PTA/UiO-66 catalysts exhibited regular octahedral shape.The Raman spectra revealed that PTA in the composites retained the Keggin structure.The XPS results showed that the electron transfer occurred from Zr-MOF to PTA.The ODS reaction mechanism was discussed.Electrons transfer from Zr-MOF to PTA can promote the generation of active species(·OH)and thus enhance the ODS activity.This explanation can be confirmed by the formation of oxygen vacancy and W0 as revealed by the XPS analysis. 展开更多
关键词 phosphotungstic acid Zr-MOF oxidative desulfurization synergistic effect oxygen vacancy
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Effect of Doped Vanadium Dioxide on Oxidative Desulfurization Reaction 被引量:4
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作者 Zhao Yutong zong mengya +3 位作者 Fan Cunzheng Chen Kun Wang Danhong Zhang Minghui 《China Petroleum Processing & Petrochemical Technology》 SCIE CAS 2019年第4期42-48,共7页
VO2(M) doped with different metals(Ti, Ce, Nb, Zr, W, and Mo) was successfully synthesized by the hydrothermal reduction process using oxalic acid as the reductant. The results showed that doping metals in the VO2(M) ... VO2(M) doped with different metals(Ti, Ce, Nb, Zr, W, and Mo) was successfully synthesized by the hydrothermal reduction process using oxalic acid as the reductant. The results showed that doping metals in the VO2(M) lattice could enhance the oxidative desulfurization(ODS) activity. The DSC and Raman spectra revealed that VO2(M) retained its monoclinic structure after doping. Mechanism for the improvement of ODS activity by doping was investigated. Electron transfer to V(V) atom occurs upon doping, and then V(V) changes into V(IV), which can promote the ODS reaction. This explanation can be confirmed by the fact that doping can promote the proportion of V(Ⅳ) after doping as revealed by the XPS analysis. 展开更多
关键词 doped VO2 hydrothermal reduction method oxidative desulfurization MECHANISM electron transfer
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