Self-oscillation is an intriguing and omnipresent phenomenon that governs a broad range of growth dynamics and formation of nanoscale periodic and delicate heterostructures.A self-oscillating growth phenomenon of cata...Self-oscillation is an intriguing and omnipresent phenomenon that governs a broad range of growth dynamics and formation of nanoscale periodic and delicate heterostructures.A self-oscillating growth phenomenon of catalyst droplets,consuming surface-coating a-Si/a-Ge bilayer,is exploited to accomplish a high-frequency alternating growth of ultrathin crystalline Si and Ge(c-Si/c-Ge)nano-slates,with Ge-rich layer thickness of 14–19 nm,embedded within a superlattice nanowire structure,with pre-known position and uniform channel diameter.A subsequent selective etching of the Ge-rich segments leaves a chain of ultrafine standing c-Si nanosheets down to~6 nm thick,without the use of any expensive high-resolution lithography and growth modulation control.A ternary-phase-competition model has been established to explain the underlying formation mechanism of this nanoscale self-oscillating growth dynamics.It is also suggested that these ultrathin nanosheets could help to produce ultrathin fin-channels for advanced electronics,or provide size-specified trapping sites to capture and position hetero nanoparticle for high-precision labelling or light emission.展开更多
We obtain the boundedness of some integral operators and commutators on homogeneous Herz spaces with three variable exponents K^(˙α(⋅))_(p(⋅),q(⋅)),such as some sublinear operators,the fractional integral and its co...We obtain the boundedness of some integral operators and commutators on homogeneous Herz spaces with three variable exponents K^(˙α(⋅))_(p(⋅),q(⋅)),such as some sublinear operators,the fractional integral and its commutator.展开更多
基金the National Natural Science Foundation of China(Grant Nos.92164201,61921005,61974064,61934004,and 11874198)。
文摘Self-oscillation is an intriguing and omnipresent phenomenon that governs a broad range of growth dynamics and formation of nanoscale periodic and delicate heterostructures.A self-oscillating growth phenomenon of catalyst droplets,consuming surface-coating a-Si/a-Ge bilayer,is exploited to accomplish a high-frequency alternating growth of ultrathin crystalline Si and Ge(c-Si/c-Ge)nano-slates,with Ge-rich layer thickness of 14–19 nm,embedded within a superlattice nanowire structure,with pre-known position and uniform channel diameter.A subsequent selective etching of the Ge-rich segments leaves a chain of ultrafine standing c-Si nanosheets down to~6 nm thick,without the use of any expensive high-resolution lithography and growth modulation control.A ternary-phase-competition model has been established to explain the underlying formation mechanism of this nanoscale self-oscillating growth dynamics.It is also suggested that these ultrathin nanosheets could help to produce ultrathin fin-channels for advanced electronics,or provide size-specified trapping sites to capture and position hetero nanoparticle for high-precision labelling or light emission.
基金This work was supported in part by the National Natural Science Foundation of China(Grant Nos.11671397,12071473).
文摘We obtain the boundedness of some integral operators and commutators on homogeneous Herz spaces with three variable exponents K^(˙α(⋅))_(p(⋅),q(⋅)),such as some sublinear operators,the fractional integral and its commutator.
