Spin torque nano-oscillators with a perpendicular spin polarizer

We present an overview in the understanding of spin-transfer torque(STT) induced magnetization dynamics in spintorque nano-oscillator(STNO) devices. The STNO contains an in-plane(IP) magnetized free layer and an out-of-plane(OP) magnetized spin polarizing layer. After a brief introduction, we first use mesoscopic micromagnetic simulations,which are based on the Landau–Lifshitz–Gilbert equation including the STT effect, to specify how a spin-torque term may tune the magnetization precession orbits of the free layer, showing that the oscillator frequency is proportional to the current density and the z-component of the free layer magnetization. Next, we propose a pendulum-like model within the macrospin approximation to describe the dynamic properties in such type of STNOs. After that, we further show the procession dynamics of the STNOs excited by IP and OP dual spin-polarizers. Both the numerical simulations and analytical theory indicate that the precession frequency is linearly proportional to the spin-torque of the OP polarizer only and is irrelevant to the spin-torque of the IP polarizer. Finally, a promising approach of coordinate transformation from the laboratory frame to the rotation frame is introduced, by which the nonstationary OP magnetization precession process is therefore transformed into the stationary process in the rotation frame. Through this method, a promising digital frequency shift-key modulation technique is presented, in which the magnetization precession can be well controlled at a given orbit as well as its precession frequency can be tuned with the co-action of spin polarized current and magnetic field(or electric field) pulses.

Magnetic anisotropy manipulation and interfacial coupling in Sm_(3)Fe_(5)O_(12)films and CoFe/Sm_(3)Fe_(5)O_(12)heterostructures

The magnetic anisotropy manipulation in the Sm_(3)Fe_(5)O_(12)(SmIG)films and its effect on the interfacial spin coupling in the CoFe/SmIG heterostructures were studied carefully.By switching the orientation of the Gd_(3)Ga_(5)O_(12)substrates from(111)to(001),the magnetic anisotropy of obtained SmIG films shifts from in-plane to out-of-plane.Similar results can also be obtained in the films on Gd_(3)Ga_(5)O_(12)substrates,which identifies the universality of such orientation-induced magnetic anisotropy switching.Additionally,the interfacial spin coupling and magnetic anisotropy switching effect on the spin wave in CoFe/SmIG magnetic heterojunctions have also been explored by utilizing the time-resolved magneto-optical Kerr effect technique.It is intriguing to find that both the frequency and effective damping factor of spin precession in CoFe/SmIG heterojunctions can be manipulated by the magnetic anisotropy switching of SmIG films.These findings not only provide a route for the perpendicular magnetic anisotropy acquisition but also give a further path for spin manipulation in magnetic films and heterojunctions.

Role of TbFe on Perpendicular Magnetic Anisotropy and Giant Magnetoresistance Effect in [Co/Ni]_N-Based Spin Valves

The exchange-coupled [Co/Ni]N/Tb Fe nano-magnetic films can display strong perpendicular magnetic anisotropy(PMA) which depends on the Tb:Fe component ratio, Tb Fe layer thickness and the repetition number N of [Co/Ni]Nmultilayer. Perpendicular spin valves in the nano thickness scale, consisting of a [Co/Ni]3free and a [Co/Ni]5/Tb Fe reference multilayer, show high giant magnetoresistance(GMR) signal of 6.5 % and a large switching field difference over3 k Oe. However, unexpected slanting of the free layer magnetization, accompanied by a reduced GMR ratio, was found to be caused by the presence of a thick Fe-rich or even a thin but Tb-rich Tb Fe layer. We attribute this phenomenon to the large magnetostriction effect of Tb Fe which probably induces strong stress acting on the free layer and hence reduces its interfacial PMA.