To reduce system complexity and bridge the interface between electronic and photonic circuits,there is a high demand for a non-volatile memory that can be accessed both electrically and optically.However,practical sol...To reduce system complexity and bridge the interface between electronic and photonic circuits,there is a high demand for a non-volatile memory that can be accessed both electrically and optically.However,practical solutions are still lacking when considering the potential for large-scale complementary metal-oxide semiconductor compatible integration.Here,we present an experimental demonstration of a non-volatile photonic-electronic memory based on a 3-dimensional monolithic integrated ferroelectric-silicon ring resonator.We successfully demonstrate programming and erasing the memory using both electrical and optical methods,assisted by optical-to-electrical-to-optical conversion.The memory cell exhibits a high optical extinction ratio of 6.6 dB at a low working voltage of 5 V and an endurance of 4×104 cycles.Furthermore,the multi-level storage capability is analyzed in detail,revealing stable performance with a raw bit-error-rate smaller than 5.9×10−2.This ground-breaking work could be a key technology enabler for future hybrid electronic-photonic systems,targeting a wide range of applications such as photonic interconnect,high-speed data communication,and neuromorphic computing.展开更多
基金supported by the National Research Foundation(NRF)Singapore,under its Quantum Engineering Program 1.0 projects(QEP-P3)MOE Tier 1(A-8001168-00-00).
文摘To reduce system complexity and bridge the interface between electronic and photonic circuits,there is a high demand for a non-volatile memory that can be accessed both electrically and optically.However,practical solutions are still lacking when considering the potential for large-scale complementary metal-oxide semiconductor compatible integration.Here,we present an experimental demonstration of a non-volatile photonic-electronic memory based on a 3-dimensional monolithic integrated ferroelectric-silicon ring resonator.We successfully demonstrate programming and erasing the memory using both electrical and optical methods,assisted by optical-to-electrical-to-optical conversion.The memory cell exhibits a high optical extinction ratio of 6.6 dB at a low working voltage of 5 V and an endurance of 4×104 cycles.Furthermore,the multi-level storage capability is analyzed in detail,revealing stable performance with a raw bit-error-rate smaller than 5.9×10−2.This ground-breaking work could be a key technology enabler for future hybrid electronic-photonic systems,targeting a wide range of applications such as photonic interconnect,high-speed data communication,and neuromorphic computing.
