We experimentally demonstrate a silicon photonic modulator that can be loaded with a combination of lateral and interleaved p-n junctions to enhance its phase modulation.We use an asymmetric Bragg grating to introduce...We experimentally demonstrate a silicon photonic modulator that can be loaded with a combination of lateral and interleaved p-n junctions to enhance its phase modulation.We use an asymmetric Bragg grating to introduce mode conversion in the active area,allowing the modulator to operate in reflection without introducing additional on-chip loss.With a compact footprint(phase shifter length of 290μm),the modulator demonstrates a modulation speed up to 45 Gb/s with a bit error rate below the 7% forward-error-correction(FEC)threshold(up to 55 Gb/s with 20% FEC),and a low power consumption of 226 fJ/bit.展开更多
基金Natural Sciences and Engineering Research Council of Canada and Huawei Canada through a Partnership(CRDPJ 538381-18).
文摘We experimentally demonstrate a silicon photonic modulator that can be loaded with a combination of lateral and interleaved p-n junctions to enhance its phase modulation.We use an asymmetric Bragg grating to introduce mode conversion in the active area,allowing the modulator to operate in reflection without introducing additional on-chip loss.With a compact footprint(phase shifter length of 290μm),the modulator demonstrates a modulation speed up to 45 Gb/s with a bit error rate below the 7% forward-error-correction(FEC)threshold(up to 55 Gb/s with 20% FEC),and a low power consumption of 226 fJ/bit.
