We investigate influences of series resistances on the performance of 1.55 μm waveguide-type germanium photodetectors（Ge-PDs） on a silicon-on-insulator substrate. The current-voltage characteristics, responsivities...We investigate influences of series resistances on the performance of 1.55 μm waveguide-type germanium photodetectors（Ge-PDs） on a silicon-on-insulator substrate. The current-voltage characteristics, responsivities,saturation photo-current characteristics, electrical reflection coefficients, and photodetection frequency responses of Ge-PDs, having different series resistances, are measured, and their equivalent circuit models are established. By analyzing the resulting circuit model parameters, we determine how much Ge-PD series resistances influence Ge-PD saturation photo-currents and photodetection bandwidth. These results should be of great use for optimization of Ge-PD fabrication processes and device parameters for target applications.展开更多
We demonstrate an integrated Si optical single-sideband(OSSB) modulator composed of a parallel dual-ring modulator(PDRM) and a quadrature hybrid coupler(QHC). Both the PDRM and the QHC are carefully designed for 30 GH...We demonstrate an integrated Si optical single-sideband(OSSB) modulator composed of a parallel dual-ring modulator(PDRM) and a quadrature hybrid coupler(QHC). Both the PDRM and the QHC are carefully designed for 30 GHz opearation, and their operations are verified by measurement. The Si OSSB modulator successfully generates a single sideband with larger than 15 dB suppression of the undesired sideband.展开更多
基金supported in part by the National Research Foundation of Korea through the Korean Ministry of Science,ICTFuture Planning under Grant No.2015R1A2A2A01007772in part by the Materials and Parts Technology Research and Development Program through the Korean Ministry of Trade,Industry & Energy under Project No.10065666
文摘We investigate influences of series resistances on the performance of 1.55 μm waveguide-type germanium photodetectors（Ge-PDs） on a silicon-on-insulator substrate. The current-voltage characteristics, responsivities,saturation photo-current characteristics, electrical reflection coefficients, and photodetection frequency responses of Ge-PDs, having different series resistances, are measured, and their equivalent circuit models are established. By analyzing the resulting circuit model parameters, we determine how much Ge-PD series resistances influence Ge-PD saturation photo-currents and photodetection bandwidth. These results should be of great use for optimization of Ge-PD fabrication processes and device parameters for target applications.
基金Korean Ministry of Science,ICT and Future Planning(MSIP)(2015R1A2A2A01007772)Korean Ministry of Trade,Industry and Energy(MOTIE)(10065666)
文摘We demonstrate an integrated Si optical single-sideband(OSSB) modulator composed of a parallel dual-ring modulator(PDRM) and a quadrature hybrid coupler(QHC). Both the PDRM and the QHC are carefully designed for 30 GHz opearation, and their operations are verified by measurement. The Si OSSB modulator successfully generates a single sideband with larger than 15 dB suppression of the undesired sideband.
