TiNi thin films were sputter-deposited on circular single-crystal silicon substrates un-der various sputtering parameters. The crystal structure and residual stress of the as-deposited films were determined by X-ray d...TiNi thin films were sputter-deposited on circular single-crystal silicon substrates un-der various sputtering parameters. The crystal structure and residual stress of the as-deposited films were determined by X-ray diffraction and substrate-curvature method. The phenomenon of stress-suppressed martensitic transformation was observed. R is considered that the residual stresses in SMA thin films based on circular substrates act as balanced biaxial tensile stresses. The status of equilibrant delays the align-ment of self-accommodated variants and the volume shrinkage during the martensitic transformation.展开更多
基金This work was supported by the Doctoral Research Foundation(No.98024838) of National Education Ministry.
文摘TiNi thin films were sputter-deposited on circular single-crystal silicon substrates un-der various sputtering parameters. The crystal structure and residual stress of the as-deposited films were determined by X-ray diffraction and substrate-curvature method. The phenomenon of stress-suppressed martensitic transformation was observed. R is considered that the residual stresses in SMA thin films based on circular substrates act as balanced biaxial tensile stresses. The status of equilibrant delays the align-ment of self-accommodated variants and the volume shrinkage during the martensitic transformation.
