A threshold voltage model of short-channel fully-depleted recessed-source/drain(Re-S/D) SOI MOSFETs with high-k dielectric

In this paper, a surface potential based threshold voltage model of fully-depleted（FD） recessed-source/drain（Re-S/D）silicon-on-insulator（SOI） metal-oxide semiconductor field-effect transistor（MOSFET） is presented while considering the effects of high-k gate-dielectric material induced fringing-field. The two-dimensional（2D） Poisson＇s equation is solved in a channel region in order to obtain the surface potential under the assumption of the parabolic potential profile in the transverse direction of the channel with appropriate boundary conditions. The accuracy of the model is verified by comparing the model＇s results with the 2D simulation results from ATLAS over a wide range of channel lengths and other parameters,including the dielectric constant of gate-dielectric material.

Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs

This work presents a comparative study of the influence of various parameters on the analog and RF properties of silicon-nanotube MOSFETs and nanowire-based gate-all-around（GAA） MOSFETs.The important analog and RF performance parameters of SiNT FETs and GAA MOSFETs,namely drain current（/d）,transconductance to drain current ratio（g_m/I_d）,I_（on）/I_（off）,the cut-off frequency（f_T） and the maximum frequency of oscillation（/max） are evaluated with the help of Y- and H-parameters which are obtained from a 3-D device simulator,ATLAS^（TM）.It is found that the silicon-nanotube MOSFETs have far more superior analog and RF characteristics（g_m/I_d,f_T and /max） compared to the nanowire-based gate-all-around GAA MOSFETs.The silicon-nanotube MOSFET shows an improvement of ~2.5 and 3 times in the case of f_T and /max values respectively compared with the nanowire-based gate-all-around（GAA） MOSFET.

On-current modeling of short-channel double-gate(DG) MOSFETs with a vertical Gaussian-like doping profile

An analytic drain current model is presented for doped short-channel double-gate MOSFETs with a Gaussian-like doping profile in the vertical direction of the channel. The present model is valid in linear and satura- tion regions of device operation. The drain current variation with various device parameters has been demonstrated. The model is made more physical by incorporating the channel length modulation effect. Parameters like transcon- ductance and drain conductance that are important in assessing the analog performance of the device have also been formulated. The model results are validated by numerical simulation results obtained by using the commercially available ATLAS^TM, a two dimensional device simulator from SILVACO.

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon–germanium substrates

The present work gives some insight into the subthreshold behaviour of short-channel double-material- gate strained-silicon on silicon-germanium MOSFETs in terms of subthreshold swing and off-current. The formu- lation of subthreshold current and, thereupon, the subthreshold swing have been done by exploiting the expression of potential distribution in the channel region of the device. The dependence of the subthreshold characteristics on the device parameters, such as Ge mole fraction, gate length ratio, work function of control gate metal and gate length, has been tested in detail. The analytical models have been validated by the numerical simulation results that were obtained from the device simulation software ATLASTM by Silvaco Inc.