This paper reports the bulk synthesis route of the aligned and non-aligned high-quality α-Si_3N_4 nanowires (NWS) which were grown directly from the Si substrate by vapor phase deposition at 1050℃. The as-grown prod...This paper reports the bulk synthesis route of the aligned and non-aligned high-quality α-Si_3N_4 nanowires (NWS) which were grown directly from the Si substrate by vapor phase deposition at 1050℃. The as-grown products were characterized by employing XRD, SEM, HRTEM and photoluminescence. The microscopic results revealed that the products consist of single crystalline aligned and nonaligned α-Si_3N_4 NWs having a same diameter range of 30-100 nm and different lengths of about hundreds of microns. The XRD observation revealed that the products consist of α-phase Si_3N_4 NWs. The room temperature PL spectra indicated that the NWs have good emission property. The non-aligned NWs were formed at lower temperature as compared with aligned NWs. Our method is a simple and one-step procedure to synthesize the bulk-quantity and high-purity aligned and non-aligned α-Si_3N_4 NWs at a relatively low temperature. The possible growth mechanism was also briefly discussed.展开更多
基金Supported by the National 973 Project of Chinathe National Natural Science Foundation of China (Grant No. 90206046)
文摘This paper reports the bulk synthesis route of the aligned and non-aligned high-quality α-Si_3N_4 nanowires (NWS) which were grown directly from the Si substrate by vapor phase deposition at 1050℃. The as-grown products were characterized by employing XRD, SEM, HRTEM and photoluminescence. The microscopic results revealed that the products consist of single crystalline aligned and nonaligned α-Si_3N_4 NWs having a same diameter range of 30-100 nm and different lengths of about hundreds of microns. The XRD observation revealed that the products consist of α-phase Si_3N_4 NWs. The room temperature PL spectra indicated that the NWs have good emission property. The non-aligned NWs were formed at lower temperature as compared with aligned NWs. Our method is a simple and one-step procedure to synthesize the bulk-quantity and high-purity aligned and non-aligned α-Si_3N_4 NWs at a relatively low temperature. The possible growth mechanism was also briefly discussed.