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New Developments in Lorentz Force Velocimetry
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作者 A.Thess t.boeck +14 位作者 S.Engert M.Gramss C.Heinicke D.Jian C.Karcher R.Klein Y.Kolesnikov V.Minchenya G.Pulugundla C.Resagk F.Santara J.Schumacher S.Tympel C.Weidermann A.Wegfrass 《Journal of Iron and Steel Research International》 SCIE EI CAS CSCD 2012年第S1期475-478,共4页
Lorentz force velocimetry(LFV)is a noncontact technique for the measurement of velocities in hightemperature metal melts that is based on exposing the liquid metal to a magnetic field and measuring the force acting up... Lorentz force velocimetry(LFV)is a noncontact technique for the measurement of velocities in hightemperature metal melts that is based on exposing the liquid metal to a magnetic field and measuring the force acting upon the magnet system([1],[2],[3],[4]).The present communication provides an overview of recent research activities in LFV carried out at the Institute of Thermodynamics and Fluid Mechanics at Ilmenau University of Technology.The overview will focus on fundamental issues such as the suitability of LFV for local velocity measurement as well as on applications such as flow measurement in poorly conducting melts,industrial applications in aluminium production as well as on wet,dry and numerical calibration methods for LFV-systems.The present overview will be supplemented by individual presentations on specific topics to be presented in the papers by Heinicke,Jian,Wegfrass,Gramss,Kolesnikov and Karcher. 展开更多
关键词 Flow measurement MAGNETOHYDRODYNAMICS
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Steady-state solution growth of microcrystalline silicon on nanocrystalline seed layers on glass
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作者 r.bansen c.ehlers +1 位作者 th.teubner t.boeck 《Journal of Semiconductors》 EI CAS CSCD 2016年第9期37-40,共4页
The growth of polycrystalline silicon layers on glass from tin solutions at low temperatures is presented.This approach is based on the steady-state solution growth of Si crystallites on nanocrystalline seed layers, w... The growth of polycrystalline silicon layers on glass from tin solutions at low temperatures is presented.This approach is based on the steady-state solution growth of Si crystallites on nanocrystalline seed layers, which are prepared in a preceding process step. Scanning electron microscopy and atomic force microscopy investigations reveal details about the seed layer surfaces, which consist of small hillocks, as well as about Sn inclusions and gaps along the glass substrate after solution growth. The successful growth of continuous microcrystalline Si layers with grain sizes up to several ten micrometers shows the feasibility of the process and makes it interesting for photovoltaics. 展开更多
关键词 thin film solar cell microcrystalline Si solution growth steady-state liquid phase epitaxy(SSLPE) seed layer
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